EPE Association: EPE 2022 - DS3c: Estimation, Identification and Optimisation Methods

EPE 2022 - DS3c: Estimation, Identification and Optimisation Methods
You are here: EPE Documents > 01 - EPE & EPE ECCE Conference Proceedings > EPE 2022 ECCE Europe - Conference > EPE 2022 - Topic 04: Electrical Machines and Drive Systems > EPE 2022 - DS3c: Estimation, Identification and Optimisation Methods

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   A Simplified Model for the Ageing Potential Under Highly Rippled Load
By Tomas KACETL [View]
[Download]

Abstract: Influence of rippled load on lithium batteries is receiving increased attention. According to recent studies, accelerated ageing strongly depends on the frequency control of the ripple. We use electro-chemical models to derive a highly simplified regression model that catches the asymptotic behavior and allows parameter identification and calibration to specific cells.

   Dynamic Power Analysis of Inverter-Fed Drives based on the Switching Period of the Power Electronics
By Alexander STOCK [View]
[Download]

Abstract: Maximizing efficiency is one of the key design criteria for inverter-fed drives. The basis of this optimization process is a reliable measurement of the efficiency. The efficiency determination is in turn based on the cyclic calculation of the active power quantities based the fundamental period of the electrical quantities (voltages and currents) which is defined in detail in the relevant standards. For this reason, periodic voltages and currents are assumed to result in a steady-state condition of the drive if the standards are interpreted accurately. In many modern, highly dynamic applications (automotive, robotics, etc.), however, steady-state conditions are rare during normal operation. The electrical quantities change continuously both in magnitude and frequency and are characterized by transient behavior. In this paper, a novel highly dynamic measurement method for the approximation of the active power and efficiency is presented with regard to these dynamic applications. This methodology still approximates the conventional fundamental cycle-based definitions in the steady state, but also delivers additional dynamic information during transient balancing processes. The dynamic power analysis uses the switching period of the power electronics as averaging interval. For this reason, with regard to real-time measurements, a robust online switching cycle detection is an essential requirement to be able to perform this power analysis on a real-time capable power analyzer.

   Novel Analytical Method for Estimating the Junction-to-Top Thermal Resistance of Power MOSFETs
By José Miguel SANZ-ALCAINE [View]
[Download]

Abstract: This papers proposes a new methodology for estimating the thermal resistance from the junction-to-topcapsule surface. By placing the transistor in a vertical position, without being soldered to any PCB, andsensing the dissipated power and the temperatures of the device, it is possible to characterize the internal thermal resistance.

   On the reduction of output capacitance in two-level three phase PFC boost rectifier for pulsating loads
By Tania CUESTA CANO [View]
[Download]

Abstract: This work explores the dc-link capacitance reduction of a traditional three phase rectifier. A review of different methods for reducing the current across the dc-link capacitor, and consequently its size, is presented in this paper. In this work, the achievable capacitance reduction is explored by the action of a dual-loop control. A two-level power factor correction six-switch voltage source rectifier feeding a high demanding pulse load is analyzed. As a baseline, the output capacitor is designed from an energy storage perspective to achieve a specified maximum voltage ripple. The control design is performed in the frequency domain to get the best disturbance rejection under certain requirements and implementation constraints with the help of system time response evaluation. This work proposes a theoretical analysis that can be applied for the pursuit of converter weight reduction or other figures of merit such as volume or cost. The conclusions achieved with that theoretical study provide capacitance reduction ratios for the two-level power factor correction six-switch voltage source rectifier when implementing a classic dual-loop control algorithm.

   Utilizing the Electroluminescence of SiC MOSFETs as Degradation Sensitive Optical Parameter
By Lukas A. RUPPERT [View]
[Download]

Abstract: Bias Temperature Instability (BTI) is a major reliability challenge of SiC MOSFETs due to the high defect density of the gate oxide compared to Si MOSFETs. Charge trapping at these defects causes gradual threshold voltage drift and degradation of the on-state resistance, which leads to higher device losses and temperatures. To avoid critical failures, the health state of the gate oxide can be monitored by measuring the BTI-related degradation. This work demonstrates that the electroluminescence (EL) emitted by the body diode of SiC MOSFETs can be utilized as such an aging precursor. As trapped charges at the gate oxide influence the current proportions between the channel and the light-emitting body diode during third quadrant operation, the EL exhibits a sensitivity to BTI that can be sensed as part of online condition monitoring. This paper investigates the EL sensitivity to BTI by means of accelerated aging tests and EL measurements on an industry-standard SiC power MOSFET. The measurement results show a strong increase in the EL intensity for a positive threshold voltage drift, thereby validating the proposed sensing approach.

EPE 2022 - DS3c: Estimation, Identification and Optimisation Methods
You are here: EPE Documents > 01 - EPE & EPE ECCE Conference Proceedings > EPE 2022 ECCE Europe - Conference > EPE 2022 - Topic 04: Electrical Machines and Drive Systems > EPE 2022 - DS3c: Estimation, Identification and Optimisation Methods
	[return to parent folder]

	A Simplified Model for the Ageing Potential Under Highly Rippled Load By Tomas KACETL	[View] [Download]
Abstract: Influence of rippled load on lithium batteries is receiving increased attention. According to recent studies, accelerated ageing strongly depends on the frequency control of the ripple. We use electro-chemical models to derive a highly simplified regression model that catches the asymptotic behavior and allows parameter identification and calibration to specific cells.

	Dynamic Power Analysis of Inverter-Fed Drives based on the Switching Period of the Power Electronics By Alexander STOCK	[View] [Download]
Abstract: Maximizing efficiency is one of the key design criteria for inverter-fed drives. The basis of this optimization process is a reliable measurement of the efficiency. The efficiency determination is in turn based on the cyclic calculation of the active power quantities based the fundamental period of the electrical quantities (voltages and currents) which is defined in detail in the relevant standards. For this reason, periodic voltages and currents are assumed to result in a steady-state condition of the drive if the standards are interpreted accurately. In many modern, highly dynamic applications (automotive, robotics, etc.), however, steady-state conditions are rare during normal operation. The electrical quantities change continuously both in magnitude and frequency and are characterized by transient behavior. In this paper, a novel highly dynamic measurement method for the approximation of the active power and efficiency is presented with regard to these dynamic applications. This methodology still approximates the conventional fundamental cycle-based definitions in the steady state, but also delivers additional dynamic information during transient balancing processes. The dynamic power analysis uses the switching period of the power electronics as averaging interval. For this reason, with regard to real-time measurements, a robust online switching cycle detection is an essential requirement to be able to perform this power analysis on a real-time capable power analyzer.

	Novel Analytical Method for Estimating the Junction-to-Top Thermal Resistance of Power MOSFETs By José Miguel SANZ-ALCAINE	[View] [Download]
Abstract: This papers proposes a new methodology for estimating the thermal resistance from the junction-to-topcapsule surface. By placing the transistor in a vertical position, without being soldered to any PCB, andsensing the dissipated power and the temperatures of the device, it is possible to characterize the internal thermal resistance.

	On the reduction of output capacitance in two-level three phase PFC boost rectifier for pulsating loads By Tania CUESTA CANO	[View] [Download]
Abstract: This work explores the dc-link capacitance reduction of a traditional three phase rectifier. A review of different methods for reducing the current across the dc-link capacitor, and consequently its size, is presented in this paper. In this work, the achievable capacitance reduction is explored by the action of a dual-loop control. A two-level power factor correction six-switch voltage source rectifier feeding a high demanding pulse load is analyzed. As a baseline, the output capacitor is designed from an energy storage perspective to achieve a specified maximum voltage ripple. The control design is performed in the frequency domain to get the best disturbance rejection under certain requirements and implementation constraints with the help of system time response evaluation. This work proposes a theoretical analysis that can be applied for the pursuit of converter weight reduction or other figures of merit such as volume or cost. The conclusions achieved with that theoretical study provide capacitance reduction ratios for the two-level power factor correction six-switch voltage source rectifier when implementing a classic dual-loop control algorithm.

	Utilizing the Electroluminescence of SiC MOSFETs as Degradation Sensitive Optical Parameter By Lukas A. RUPPERT	[View] [Download]
Abstract: Bias Temperature Instability (BTI) is a major reliability challenge of SiC MOSFETs due to the high defect density of the gate oxide compared to Si MOSFETs. Charge trapping at these defects causes gradual threshold voltage drift and degradation of the on-state resistance, which leads to higher device losses and temperatures. To avoid critical failures, the health state of the gate oxide can be monitored by measuring the BTI-related degradation. This work demonstrates that the electroluminescence (EL) emitted by the body diode of SiC MOSFETs can be utilized as such an aging precursor. As trapped charges at the gate oxide influence the current proportions between the channel and the light-emitting body diode during third quadrant operation, the EL exhibits a sensitivity to BTI that can be sensed as part of online condition monitoring. This paper investigates the EL sensitivity to BTI by means of accelerated aging tests and EL measurements on an industry-standard SiC power MOSFET. The measurement results show a strong increase in the EL intensity for a positive threshold voltage drift, thereby validating the proposed sensing approach.