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Novel Analytical Method for Estimating the Junction-to-Top Thermal Resistance of Power MOSFETs
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Author(s) |
José Miguel SANZ-ALCAINE |
Abstract |
This papers proposes a new methodology for estimating the thermal resistance from the junction-to-topcapsule surface. By placing the transistor in a vertical position, without being soldered to any PCB, andsensing the dissipated power and the temperatures of the device, it is possible to characterize the internal thermal resistance. |
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Filename: | 0532-epe2022-full-14260486.pdf |
Filesize: | 3.182 MB |
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Type |
Members Only |
Date |
Last modified 2023-09-24 by System |
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