EPE Association: EPE 2022 - LS2b: Silicon Power Devices

EPE 2022 - LS2b: Silicon Power Devices
You are here: EPE Documents > 01 - EPE & EPE ECCE Conference Proceedings > EPE 2022 ECCE Europe - Conference > EPE 2022 - Topic 01: Devices, Packaging and System Integration > EPE 2022 - LS2b: Silicon Power Devices

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   A new power MOSFET technology achieves a further milestone in efficiency
By Ralf SIEMIENIEC [View]
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Abstract: This work introduces the characteristics and properties of the latest trench MOSFET technology released to the market. Based on the advantages of a revolutionary new cell design combined with the benefits of an advanced manufacturing technology, this new device family brings together the benefits of exceptionally low conduction losses, superior switching performances, improved SOA and good ruggedness. These features make it the best fit for high switching frequency applications, supporting the trend towards significantly higher efficiency while enabling designs for higher power densities and cost effectiveness. Typical applications for these MOSFETs include telecom, server, datacom as well as solar applications, drones, e-bikes, power tools and many other battery-powered applications (BPA). Results presented in this work focus on the 100 V voltage class intended for use in fast switching DC/DC telecom switch-mode power supplies (SMPS), and compares the new technology with its predecessor generation.

   Investigation for Condensation Test Condition of HVIGBT Modules
By Kenji HATORI [View]
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Abstract: Humidity robustness is one of the main concerns of IGBT modules since the modules are not hermetically sealed. IGBT modules are generally filled with silicone gel which has a filter effect. Condensation amount at various condensation test conditions is described in this paper based on silicone gel humidity absorption behavior investigation. At first, the humidification condition impact is investigated. As a result, it is confirmed that condensation amount depends on dissolved humidity in silicone gel, not on the absolute humidity of ambient air. Secondly, cooling speed impact is investigated, and it is confirmed that humidification at lower temperature is effective to obtain stable results independently from cooling speed. Thirdly, it is confirmed that humidification at higher temperature is effective to shorten test time. Next, it is confirmed that humidification at lower temperature is effective to obtain stable results independently from gel thickness of the module. Finally, the calculation result is verified with the experiment.

   Investigation of the Short Circuit Type II Safe Operating Area of IGBTs
By Madhu Lakshman MYSORE [View]
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Abstract: This study focuses on the short-circuit type II safe operating area (SC-II SOA) with and without gate-emitter voltage clamping. The SC-II measurements without gate-emitter voltage (VGE) clamping show a reduced SC-II SOA at higher DC-link voltages induced by transient gate-emitter voltages that are far beyond the allowed level. These high transient gate voltages result in correspondingly high peak currents. As a consequence, they cause device failure during the negative (di\_C)/dt phase, which is induced by the inductive overvoltage. However, the SC-II SOA can be completely recovered to the level of the SC-I SOA by applying an appropriate VGE clamping circuit, although the IGBT will be subjected to harsher conditions in the SC-II event compared to the SC-I event. To understand the failure types observed in SC-II measurements with and without VGE clamping, computer-aided TCAD simulations were performed using a real front-side, trench-gate IGBT structure.

EPE 2022 - LS2b: Silicon Power Devices
You are here: EPE Documents > 01 - EPE & EPE ECCE Conference Proceedings > EPE 2022 ECCE Europe - Conference > EPE 2022 - Topic 01: Devices, Packaging and System Integration > EPE 2022 - LS2b: Silicon Power Devices
	[return to parent folder]

	A new power MOSFET technology achieves a further milestone in efficiency By Ralf SIEMIENIEC	[View] [Download]
Abstract: This work introduces the characteristics and properties of the latest trench MOSFET technology released to the market. Based on the advantages of a revolutionary new cell design combined with the benefits of an advanced manufacturing technology, this new device family brings together the benefits of exceptionally low conduction losses, superior switching performances, improved SOA and good ruggedness. These features make it the best fit for high switching frequency applications, supporting the trend towards significantly higher efficiency while enabling designs for higher power densities and cost effectiveness. Typical applications for these MOSFETs include telecom, server, datacom as well as solar applications, drones, e-bikes, power tools and many other battery-powered applications (BPA). Results presented in this work focus on the 100 V voltage class intended for use in fast switching DC/DC telecom switch-mode power supplies (SMPS), and compares the new technology with its predecessor generation.

	Investigation for Condensation Test Condition of HVIGBT Modules By Kenji HATORI	[View] [Download]
Abstract: Humidity robustness is one of the main concerns of IGBT modules since the modules are not hermetically sealed. IGBT modules are generally filled with silicone gel which has a filter effect. Condensation amount at various condensation test conditions is described in this paper based on silicone gel humidity absorption behavior investigation. At first, the humidification condition impact is investigated. As a result, it is confirmed that condensation amount depends on dissolved humidity in silicone gel, not on the absolute humidity of ambient air. Secondly, cooling speed impact is investigated, and it is confirmed that humidification at lower temperature is effective to obtain stable results independently from cooling speed. Thirdly, it is confirmed that humidification at higher temperature is effective to shorten test time. Next, it is confirmed that humidification at lower temperature is effective to obtain stable results independently from gel thickness of the module. Finally, the calculation result is verified with the experiment.

	Investigation of the Short Circuit Type II Safe Operating Area of IGBTs By Madhu Lakshman MYSORE	[View] [Download]
Abstract: This study focuses on the short-circuit type II safe operating area (SC-II SOA) with and without gate-emitter voltage clamping. The SC-II measurements without gate-emitter voltage (VGE) clamping show a reduced SC-II SOA at higher DC-link voltages induced by transient gate-emitter voltages that are far beyond the allowed level. These high transient gate voltages result in correspondingly high peak currents. As a consequence, they cause device failure during the negative (di\_C)/dt phase, which is induced by the inductive overvoltage. However, the SC-II SOA can be completely recovered to the level of the SC-I SOA by applying an appropriate VGE clamping circuit, although the IGBT will be subjected to harsher conditions in the SC-II event compared to the SC-I event. To understand the failure types observed in SC-II measurements with and without VGE clamping, computer-aided TCAD simulations were performed using a real front-side, trench-gate IGBT structure.