EPE Association: EPE 2022 - DS3e: Condition Monitoring and Life-Time Prediction

EPE 2022 - DS3e: Condition Monitoring and Life-Time Prediction
You are here: EPE Documents > 01 - EPE & EPE ECCE Conference Proceedings > EPE 2022 ECCE Europe - Conference > EPE 2022 - Topic 04: Electrical Machines and Drive Systems > EPE 2022 - DS3e: Condition Monitoring and Life-Time Prediction

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   A Condition Monitoring Scheme for Semiconductor Devices in Modular Multilevel Converters With Cascaded H-Bridge Submodules
By Mohsen ASOODAR [View]
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Abstract: In this paper, a novel online semiconductor device monitoring scheme is presented. The condition monitoring (CM) scheme is based on measuring the ON-state voltage drop of semiconductor devices, and tracking the changes in their ON-state resistance. The proposed solution measures the ON-state voltage of semiconductor devices at a controlled and readily measurable temperature. This allows for accurate CM of semiconductors as it decouples temperature related and degradation related changes in the ON-state voltage. The temperature decoupling is achieved using natural switching redundancies available to modular multilevel converter systems. Hence, the proposed CM scheme does not interfere with the output voltages and currents generated by the converter.

   A quasi-offline condition monitoring method of DC-link capacitor banks in accelerator power converters
By Timm Felix BAUMANN [View]
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Abstract: This paper proposes a condition monitoring scheme for DC-link electrolytic capacitors used inregenerative medium power converters. The monitoring scheme is based on capacitor bank voltagemeasurements in quasi-offline mode. The aim of this work is to identify the voltage measurementprecision and sampling requirements to enable a reproducible and reliable capacitance calculation. Theproposed method is analyzed theoretically and supported by simulation results and validatedexperimentally.

   Implementation of onsite Junction Temperature Estimation for a SiC MOSFET Module for Condition Monitoring
By Farzad HOSSEINABADI [View]
[Download]

Abstract: This paper presents an advanced methodology for mapping junction temperature (Tj) based on the drain to source resistance (Rds,on) of a SiC MOSFET module to monitor the power electronics converter health condition. Capturing real-time measurement of on-state drain-source voltage (Vds,on), drain-source current (Ids,on) and baseplate temperature, and taking advantage of a fast edge computing device, a significant correlation can be established between Tj and Rds,on. Due to having a linear correlation and simple circuity in comparison to other junction temperature estimation methods, e.g., the internal gate resistance method (RGint), gate threshold voltage method (Vg,th) and short-circuit current method (Isc), the output results of the proposed paper can be effortlessly implemented in a simple microcontroller that can monitor the health condition of a SiC MOSFET module in terms of bond wire fatigue and metallization reconstruction. To validate the proposed method, a synchronous boost converter is prototyped and tested. The experimental results depict the effectiveness of the proposed method.

   Practical Implementation of a Concept for In-Situ Detection of Humidity-Related Degradation of IGBT Modules
By Benedikt KOSTKA [View]
[Download]

Abstract: The high voltage, high humidity, high temperature, reverse bias (HV-H³TRB) test reveals that humidity affects the blocking characteristic of an IGBT module, resulting in increased leakage current, decreased voltage blocking capability, or some combination of these. This paper presents the practical implementation of a previously proposed measurement concept for in-situ detection of moisture-induced degradation of IGBT modules in a full-scale back-to-back converter for doubly fed electrical machines typically used in wind turbines.

EPE 2022 - DS3e: Condition Monitoring and Life-Time Prediction
You are here: EPE Documents > 01 - EPE & EPE ECCE Conference Proceedings > EPE 2022 ECCE Europe - Conference > EPE 2022 - Topic 04: Electrical Machines and Drive Systems > EPE 2022 - DS3e: Condition Monitoring and Life-Time Prediction
	[return to parent folder]

	A Condition Monitoring Scheme for Semiconductor Devices in Modular Multilevel Converters With Cascaded H-Bridge Submodules By Mohsen ASOODAR	[View] [Download]
Abstract: In this paper, a novel online semiconductor device monitoring scheme is presented. The condition monitoring (CM) scheme is based on measuring the ON-state voltage drop of semiconductor devices, and tracking the changes in their ON-state resistance. The proposed solution measures the ON-state voltage of semiconductor devices at a controlled and readily measurable temperature. This allows for accurate CM of semiconductors as it decouples temperature related and degradation related changes in the ON-state voltage. The temperature decoupling is achieved using natural switching redundancies available to modular multilevel converter systems. Hence, the proposed CM scheme does not interfere with the output voltages and currents generated by the converter.

	A quasi-offline condition monitoring method of DC-link capacitor banks in accelerator power converters By Timm Felix BAUMANN	[View] [Download]
Abstract: This paper proposes a condition monitoring scheme for DC-link electrolytic capacitors used inregenerative medium power converters. The monitoring scheme is based on capacitor bank voltagemeasurements in quasi-offline mode. The aim of this work is to identify the voltage measurementprecision and sampling requirements to enable a reproducible and reliable capacitance calculation. Theproposed method is analyzed theoretically and supported by simulation results and validatedexperimentally.

	Implementation of onsite Junction Temperature Estimation for a SiC MOSFET Module for Condition Monitoring By Farzad HOSSEINABADI	[View] [Download]
Abstract: This paper presents an advanced methodology for mapping junction temperature (Tj) based on the drain to source resistance (Rds,on) of a SiC MOSFET module to monitor the power electronics converter health condition. Capturing real-time measurement of on-state drain-source voltage (Vds,on), drain-source current (Ids,on) and baseplate temperature, and taking advantage of a fast edge computing device, a significant correlation can be established between Tj and Rds,on. Due to having a linear correlation and simple circuity in comparison to other junction temperature estimation methods, e.g., the internal gate resistance method (RGint), gate threshold voltage method (Vg,th) and short-circuit current method (Isc), the output results of the proposed paper can be effortlessly implemented in a simple microcontroller that can monitor the health condition of a SiC MOSFET module in terms of bond wire fatigue and metallization reconstruction. To validate the proposed method, a synchronous boost converter is prototyped and tested. The experimental results depict the effectiveness of the proposed method.

	Practical Implementation of a Concept for In-Situ Detection of Humidity-Related Degradation of IGBT Modules By Benedikt KOSTKA	[View] [Download]
Abstract: The high voltage, high humidity, high temperature, reverse bias (HV-H³TRB) test reveals that humidity affects the blocking characteristic of an IGBT module, resulting in increased leakage current, decreased voltage blocking capability, or some combination of these. This paper presents the practical implementation of a previously proposed measurement concept for in-situ detection of moisture-induced degradation of IGBT modules in a full-scale back-to-back converter for doubly fed electrical machines typically used in wind turbines.