| Abstract |
This paper presents an advanced methodology for mapping junction temperature (Tj) based on the drain to source resistance (Rds,on) of a SiC MOSFET module to monitor the power electronics converter health condition. Capturing real-time measurement of on-state drain-source voltage (Vds,on), drain-source current (Ids,on) and baseplate temperature, and taking advantage of a fast edge computing device, a significant correlation can be established between Tj and Rds,on. Due to having a linear correlation and simple circuity in comparison to other junction temperature estimation methods, e.g., the internal gate resistance method (RGint), gate threshold voltage method (Vg,th) and short-circuit current method (Isc), the output results of the proposed paper can be effortlessly implemented in a simple microcontroller that can monitor the health condition of a SiC MOSFET module in terms of bond wire fatigue and metallization reconstruction. To validate the proposed method, a synchronous boost converter is prototyped and tested. The experimental results depict the effectiveness of the proposed method. |
