EPE Association: EPE 2021

EPE 2021 - Reliability
You are here: EPE Documents > 01 - EPE & EPE ECCE Conference Proceedings > EPE 2021 ECCE Europe - Conference > EPE 2021 - Topic 01: Devices, Packaging and System Integration > EPE 2021 - Reliability

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   A new Robust Short-Circuit Protection Gate-Driver Circuit for IGBT with high Desaturation Current
By Felix SCHOLL [View]
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Abstract: The benefit of IGBTs with a high desaturation current is a lower VCE,sat and therefore less conduction losses. As a trade-off, the short-circuit current is significantly higher, which reduces the robustness of the device. New protection methods must ensure a fast and reliable short-circuit detection to limit the stress for the transistor and the power converter during a fault event. In this paper a new short-circuit protection is presented which limits the short-circuit current without increasing the switching losses and with a higher robustness against false detections. Measurements for short-circuit type I, II and III verify this new approach.

   Humidity Absorption Behavior of Silicone Gel in HVIGBT Modules
By Kenji HATORI [View]
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Abstract: Humidity robustness is one of the main concerns regarding high-voltage IGBT (HVIGBT) modules since the modules are not hermetically sealed. HVIGBT modules are generally filled with silicone gel which has a filter effect. The humidity absorption behavior is described in this paper. The absorption behaviors under two types of condensation-test methods are compared. Also, the humidity absorption behavior under various conditions is compared. Finally, the humidity behavior under the field conditions is discussed.

   Perceptibility comparison of degraded thermal parameters of a power module by junction temperature measurement via the internal gate resistance and forward volt
By Michael GLEISSNER [View]
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Abstract: The thermal impedance of power modules is an end-of-life indicator because it increases due to materialdegradation. It can be determined by measurement of the junction temperature based on sensitiveelectrical parameters like the internal gate resistor or the forward voltage. The different results of bothmeasurement methods concerning the temperature measurement position are shown for power cycledsingle-chip IGBT modules with homogeneous and inhomogeneous temperature distribution.

   Power Cycling Results of Discrete Gallium Nitride Gate Injection Transistors
By Maximilian GOLLER [View]
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Abstract: The reliability of discrete GaN Gate Injection Transistors (GIT) in power cycling tests (PCT) was evaluated. The investigation in this paper reveal that discrete GaN GITs achieved several times the lifetime expected by discrete power device lifetime model for Si IGBTs [1]. The large number of Au nailhead bonds, which are placed at the edge of the chip, combined with a strong lateral temperature gradient on chip level can explain this. The power cycling was also a long-time stress of the gate with DC gate current in combination with a cycling drain current. No significant change in parameters was found.

EPE 2021 - Reliability
You are here: EPE Documents > 01 - EPE & EPE ECCE Conference Proceedings > EPE 2021 ECCE Europe - Conference > EPE 2021 - Topic 01: Devices, Packaging and System Integration > EPE 2021 - Reliability
	[return to parent folder]

	A new Robust Short-Circuit Protection Gate-Driver Circuit for IGBT with high Desaturation Current By Felix SCHOLL	[View] [Download]
Abstract: The benefit of IGBTs with a high desaturation current is a lower VCE,sat and therefore less conduction losses. As a trade-off, the short-circuit current is significantly higher, which reduces the robustness of the device. New protection methods must ensure a fast and reliable short-circuit detection to limit the stress for the transistor and the power converter during a fault event. In this paper a new short-circuit protection is presented which limits the short-circuit current without increasing the switching losses and with a higher robustness against false detections. Measurements for short-circuit type I, II and III verify this new approach.

	Humidity Absorption Behavior of Silicone Gel in HVIGBT Modules By Kenji HATORI	[View] [Download]
Abstract: Humidity robustness is one of the main concerns regarding high-voltage IGBT (HVIGBT) modules since the modules are not hermetically sealed. HVIGBT modules are generally filled with silicone gel which has a filter effect. The humidity absorption behavior is described in this paper. The absorption behaviors under two types of condensation-test methods are compared. Also, the humidity absorption behavior under various conditions is compared. Finally, the humidity behavior under the field conditions is discussed.

	Perceptibility comparison of degraded thermal parameters of a power module by junction temperature measurement via the internal gate resistance and forward volt By Michael GLEISSNER	[View] [Download]
Abstract: The thermal impedance of power modules is an end-of-life indicator because it increases due to materialdegradation. It can be determined by measurement of the junction temperature based on sensitiveelectrical parameters like the internal gate resistor or the forward voltage. The different results of bothmeasurement methods concerning the temperature measurement position are shown for power cycledsingle-chip IGBT modules with homogeneous and inhomogeneous temperature distribution.

	Power Cycling Results of Discrete Gallium Nitride Gate Injection Transistors By Maximilian GOLLER	[View] [Download]
Abstract: The reliability of discrete GaN Gate Injection Transistors (GIT) in power cycling tests (PCT) was evaluated. The investigation in this paper reveal that discrete GaN GITs achieved several times the lifetime expected by discrete power device lifetime model for Si IGBTs [1]. The large number of Au nailhead bonds, which are placed at the edge of the chip, combined with a strong lateral temperature gradient on chip level can explain this. The power cycling was also a long-time stress of the gate with DC gate current in combination with a cycling drain current. No significant change in parameters was found.