EPE Association: EPE 2021

EPE 2021 - Wide Bandgap
You are here: EPE Documents > 01 - EPE & EPE ECCE Conference Proceedings > EPE 2021 ECCE Europe - Conference > EPE 2021 - Topic 01: Devices, Packaging and System Integration > EPE 2021 - Wide Bandgap

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   600 V power device technologies for highly efficient power supplies
By Ralf SIEMIENIEC [View]
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Abstract: Switched mode power supplies (SMPS) for target applications covering a wide range from telecom rectifiers through servers to solar inverters or electric vehicle chargers share the need for high efficiencies in order to minimize the overall energy consumption and the total cost of ownership. With the appearance of wide bandgap semiconductors, designers cannot only choose between different devices but also may benefit from using advanced topologies. This work compares the properties of the latest generations of a CoolMOS Superjunction (SJ) device with integrated fast body diode, of a CoolSiC Silicon-Carbide MOSFET and of a CoolGaN E-mode GaN power transistor in the 600 V class. The device behavior is discussed with a view to its use in the AC-DC conversion power factor correction (PFC) stage of a power supply. It is shown how the technology-specific parameters impact the different aspects of the application performance and the choice of topology. This understanding may also act as a guideline for an adequate selection of the best-suited device technology for a given application beyond the scope of AC-DC conversion in power supplies. However, this comparison does not discuss solutions which can address device limitations with the application of dedicated circuitries as, for example, the solution recently proposed for CoolMOS which enables efficiencies close to that of wide bandgap devices.

   Assessing the Presence of Parasitic Turn On in SiC Mosfet Power Modules
By Jorge MARI [View]
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Abstract: Parasitic turn on (PTO) in multichip SiC power modules can be substantially different and more complex than in single chip or discrete components. In this paper we propose a careful extension of the classical double pulse tests, introduce new quantitative MOSFET and Body Diode metrics, and combine these with static characterization data, in order for the user to decide whether a given SiC power module when driven with a certain gate driver scheme experiences PTO or not.

   Comparison of Different Ways Controlling the Switching Behaviour of a SiC MOSFET
By Ingmar KAISER [View]
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Abstract: Due to the character of silicon carbide (SiC) MOSFET, the requirements for gate drivers are increasing. For clean switching, new switching methods have to be investigated. In this paper, classical and recently published turn-on and -off concepts as well as a novel turn-off concept are presented and compared. The novel turn-off concept offers the possibility to considerably reduce the turn-off losses compared to classical turn-off concepts.

   Short Circuit Behavior of Series-Connected 10 kV SiC MOSFETs
By Ashish KUMAR [View]
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Abstract: Proper voltage sharing among series-connected power MOSFETs is important for reliable operation and particularly crucial under short circuit stress. An uneven voltage sharing may result in an early failure of the more stressed MOSFET. In this paper, for the first time, the short circuit behavior of the series-connected 10 kV SiC MOSFETs is investigated and analyzed using the experimental results. An active clamping circuit is demonstrated at 5.7 kV dc link voltage to improve the voltage sharing during the short circuit. Analytical expressions and the experimental data have been used to estimate the short circuit (SC) robustness of the series-connected 10 kV SiC MOSFETs. The estimated short circuit withstand time of the two series-connected 10 kV SiC MOSFETs is superior to the 15 kV SiC IGBTs.

EPE 2021 - Wide Bandgap
You are here: EPE Documents > 01 - EPE & EPE ECCE Conference Proceedings > EPE 2021 ECCE Europe - Conference > EPE 2021 - Topic 01: Devices, Packaging and System Integration > EPE 2021 - Wide Bandgap
	[return to parent folder]

	600 V power device technologies for highly efficient power supplies By Ralf SIEMIENIEC	[View] [Download]
Abstract: Switched mode power supplies (SMPS) for target applications covering a wide range from telecom rectifiers through servers to solar inverters or electric vehicle chargers share the need for high efficiencies in order to minimize the overall energy consumption and the total cost of ownership. With the appearance of wide bandgap semiconductors, designers cannot only choose between different devices but also may benefit from using advanced topologies. This work compares the properties of the latest generations of a CoolMOS Superjunction (SJ) device with integrated fast body diode, of a CoolSiC Silicon-Carbide MOSFET and of a CoolGaN E-mode GaN power transistor in the 600 V class. The device behavior is discussed with a view to its use in the AC-DC conversion power factor correction (PFC) stage of a power supply. It is shown how the technology-specific parameters impact the different aspects of the application performance and the choice of topology. This understanding may also act as a guideline for an adequate selection of the best-suited device technology for a given application beyond the scope of AC-DC conversion in power supplies. However, this comparison does not discuss solutions which can address device limitations with the application of dedicated circuitries as, for example, the solution recently proposed for CoolMOS which enables efficiencies close to that of wide bandgap devices.

	Assessing the Presence of Parasitic Turn On in SiC Mosfet Power Modules By Jorge MARI	[View] [Download]
Abstract: Parasitic turn on (PTO) in multichip SiC power modules can be substantially different and more complex than in single chip or discrete components. In this paper we propose a careful extension of the classical double pulse tests, introduce new quantitative MOSFET and Body Diode metrics, and combine these with static characterization data, in order for the user to decide whether a given SiC power module when driven with a certain gate driver scheme experiences PTO or not.

	Comparison of Different Ways Controlling the Switching Behaviour of a SiC MOSFET By Ingmar KAISER	[View] [Download]
Abstract: Due to the character of silicon carbide (SiC) MOSFET, the requirements for gate drivers are increasing. For clean switching, new switching methods have to be investigated. In this paper, classical and recently published turn-on and -off concepts as well as a novel turn-off concept are presented and compared. The novel turn-off concept offers the possibility to considerably reduce the turn-off losses compared to classical turn-off concepts.

	Short Circuit Behavior of Series-Connected 10 kV SiC MOSFETs By Ashish KUMAR	[View] [Download]
Abstract: Proper voltage sharing among series-connected power MOSFETs is important for reliable operation and particularly crucial under short circuit stress. An uneven voltage sharing may result in an early failure of the more stressed MOSFET. In this paper, for the first time, the short circuit behavior of the series-connected 10 kV SiC MOSFETs is investigated and analyzed using the experimental results. An active clamping circuit is demonstrated at 5.7 kV dc link voltage to improve the voltage sharing during the short circuit. Analytical expressions and the experimental data have been used to estimate the short circuit (SC) robustness of the series-connected 10 kV SiC MOSFETs. The estimated short circuit withstand time of the two series-connected 10 kV SiC MOSFETs is superior to the 15 kV SiC IGBTs.