| Filename: | 0262-epe2021-full-17313078.pdf |
| Filesize: | 1.326 MB |
| Comparison of Different Ways Controlling the Switching Behaviour of a SiC MOSFET | ||||||
| Author(s) | Ingmar KAISER | |||||
| Abstract | Due to the character of silicon carbide (SiC) MOSFET, the requirements for gate drivers are increasing. For clean switching, new switching methods have to be investigated. In this paper, classical and recently published turn-on and -off concepts as well as a novel turn-off concept are presented and compared. The novel turn-off concept offers the possibility to considerably reduce the turn-off losses compared to classical turn-off concepts. | |||||
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| Type | Members Only | |||||
| Date | Last modified 2022-03-15 by System | |||||
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