EPE Association: EPE 1987 - 13 - Lecture Session 1.13: MODELLING AND SIMULATION (II)

EPE 1987 - 13 - Lecture Session 1.13: MODELLING AND SIMULATION (II)
You are here: EPE Documents > 01 - EPE & EPE ECCE Conference Proceedings > EPE 1987 - Conference > EPE 1987 - 13 - Lecture Session 1.13: MODELLING AND SIMULATION (II)

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   APPLICATION OF FUNCTIONAL ANALYSIS CONCEPTS IN POWER ELECTRONICS
By G. Manesse; G. Ledée [View]
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Abstract: The authors propose a concept extension of control components for power converters complex chains generally associated with operating components. To begin with, three hierarchically control levels are defined corresponding respectively to power switching elements of the converter, near and long distance control networks. Then, state Petri nets without conflicts are used for modelling each control compenent and for describing dialogues with three associated operating parts. Finally, the obtained model is used to structurize an overall numerical model which allows the observation of the system's operations working out. In the present case, a conversion chain is chosen which includes a frequency changer associated with a three-phase inverter to feed an induction machine.

   NUMERICAL ANALYSIS OF SWITCHING PROCESSES IN TURN-OFF THYRISTORS
By E. Masada; Y. Tobe; T. Nakajima; M. Tamura [View]
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Abstract: Based on fundamental equations describing carrier transport and potential distribution, the semiconductor power device is modelled with the finite difference scheme. To reduce the computational time, the irregular mesh approach is introduced. It can reduce 20% of the time in general device condition. If the structure of the device satisfies certain conditions, the method works more effectively. Combined with the variable mesh approach depending upon the operating state of the device, this scheme can carry out simulation of switching processes of high power thyristors, which requires so much computational time. Switching of a gate turn-off thyristor (GTO) and a static induction thyristor (SIT) is calculated with this analyzing program. The variation of carrier concentration, potential and current distribution during switching process is clarified. Their dependency on device parameters and its dimensions are studied. The current squeeze and concentration during turn-off in GTO could be related to the gate structure. Effective channel width of SIT also can be determined through numerical analysis.

   MODELLING ASYMMETRICAL PIN DIODES USING BOUNDARY DETERMINED CURRENT DENSITY EQUATIONS
By J. McGhee; I.A. Henderson; I. Hulley [View]
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Abstract: An equation for the current density, which is expressed in terms of the space charge to bulk boundary conditions in an arbitrary semiconductor junction, is given. This equation provides a flexible, but powerful, basis for the analysis of many different kinds of junction. Thus, explicit solution for the current density in asymmetrical PIN power diodes is obtained. Investigation of divergence from symmetry caused by variations in material, geometry and carrier attributes is allowed by this equation.

   ANALYSIS OF A FULL-BRIDGE SERIES-RESONANT POWER INTERFACE WITH A BIPOLAR POWER FLOW FOR A CYCLIC STABLE MODE OF OPERATION
By J. Ben Klaassens [View]
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Abstract: High electric power conditioners operating at high frequencies are receiving increasing attention. The application of series-resonant power converters and related converter circuits are now the state-of-the-art for low-power applications. Miniaturization of power converters for the submegawatt range operating at high frequencies is now an important development for compact, fast-reacting machine drives. Many applications do need to use a bilateral flow of power (four-quadrant operation). A time-domain analysis for the steady-state modeling of a series-resonant power interface for the step-up and the step-down mode is presented. The exchange of electric energy between a source and the resonant circuit in order to stabilize the stored electric energy is defined. The characteristics of a series-resonant converter with a bilateral power flow are presented in a normalized form, described by the output characteristics. The results obtained in a four-quadrant motor drive illustrate the characteristics of a high-frequency power interface.

   NEW HIGH PERFORMANCES MODELING AND REGULATION METHOD FOR DC-DC CONVERTERS
By Th. Michaux; E. Driessens [View]
[Download]

Abstract: A new current injected modeling approach of the DC-DC switching cell is applied on a buck cell with an input filter. General CAD programs on PC computer have been developped. Simulations are compared with reality and reveal a good accuracy of the results. High level performances regulations based on state variables are designed end tested on a analogic model of the converter.

EPE 1987 - 13 - Lecture Session 1.13: MODELLING AND SIMULATION (II)
You are here: EPE Documents > 01 - EPE & EPE ECCE Conference Proceedings > EPE 1987 - Conference > EPE 1987 - 13 - Lecture Session 1.13: MODELLING AND SIMULATION (II)
	[return to parent folder]

	APPLICATION OF FUNCTIONAL ANALYSIS CONCEPTS IN POWER ELECTRONICS By G. Manesse; G. Ledée	[View] [Download]
Abstract: The authors propose a concept extension of control components for power converters complex chains generally associated with operating components. To begin with, three hierarchically control levels are defined corresponding respectively to power switching elements of the converter, near and long distance control networks. Then, state Petri nets without conflicts are used for modelling each control compenent and for describing dialogues with three associated operating parts. Finally, the obtained model is used to structurize an overall numerical model which allows the observation of the system's operations working out. In the present case, a conversion chain is chosen which includes a frequency changer associated with a three-phase inverter to feed an induction machine.

	NUMERICAL ANALYSIS OF SWITCHING PROCESSES IN TURN-OFF THYRISTORS By E. Masada; Y. Tobe; T. Nakajima; M. Tamura	[View] [Download]
Abstract: Based on fundamental equations describing carrier transport and potential distribution, the semiconductor power device is modelled with the finite difference scheme. To reduce the computational time, the irregular mesh approach is introduced. It can reduce 20% of the time in general device condition. If the structure of the device satisfies certain conditions, the method works more effectively. Combined with the variable mesh approach depending upon the operating state of the device, this scheme can carry out simulation of switching processes of high power thyristors, which requires so much computational time. Switching of a gate turn-off thyristor (GTO) and a static induction thyristor (SIT) is calculated with this analyzing program. The variation of carrier concentration, potential and current distribution during switching process is clarified. Their dependency on device parameters and its dimensions are studied. The current squeeze and concentration during turn-off in GTO could be related to the gate structure. Effective channel width of SIT also can be determined through numerical analysis.

	MODELLING ASYMMETRICAL PIN DIODES USING BOUNDARY DETERMINED CURRENT DENSITY EQUATIONS By J. McGhee; I.A. Henderson; I. Hulley	[View] [Download]
Abstract: An equation for the current density, which is expressed in terms of the space charge to bulk boundary conditions in an arbitrary semiconductor junction, is given. This equation provides a flexible, but powerful, basis for the analysis of many different kinds of junction. Thus, explicit solution for the current density in asymmetrical PIN power diodes is obtained. Investigation of divergence from symmetry caused by variations in material, geometry and carrier attributes is allowed by this equation.

	ANALYSIS OF A FULL-BRIDGE SERIES-RESONANT POWER INTERFACE WITH A BIPOLAR POWER FLOW FOR A CYCLIC STABLE MODE OF OPERATION By J. Ben Klaassens	[View] [Download]
Abstract: High electric power conditioners operating at high frequencies are receiving increasing attention. The application of series-resonant power converters and related converter circuits are now the state-of-the-art for low-power applications. Miniaturization of power converters for the submegawatt range operating at high frequencies is now an important development for compact, fast-reacting machine drives. Many applications do need to use a bilateral flow of power (four-quadrant operation). A time-domain analysis for the steady-state modeling of a series-resonant power interface for the step-up and the step-down mode is presented. The exchange of electric energy between a source and the resonant circuit in order to stabilize the stored electric energy is defined. The characteristics of a series-resonant converter with a bilateral power flow are presented in a normalized form, described by the output characteristics. The results obtained in a four-quadrant motor drive illustrate the characteristics of a high-frequency power interface.

	NEW HIGH PERFORMANCES MODELING AND REGULATION METHOD FOR DC-DC CONVERTERS By Th. Michaux; E. Driessens	[View] [Download]
Abstract: A new current injected modeling approach of the DC-DC switching cell is applied on a buck cell with an input filter. General CAD programs on PC computer have been developped. Simulations are compared with reality and reveal a good accuracy of the results. High level performances regulations based on state variables are designed end tested on a analogic model of the converter.