| Abstract |
Based on fundamental equations describing carrier transport and potential distribution, the semiconductor power device is modelled with the finite difference scheme. To reduce the computational time, the irregular mesh approach is introduced. It can reduce 20% of the time in general device condition. If the structure of the device satisfies certain conditions, the method works more effectively. Combined with the variable mesh approach depending upon the operating state of the device, this scheme can carry out simulation of switching processes of high power thyristors, which requires so much computational time. Switching of a gate turn-off thyristor (GTO) and a static induction thyristor (SIT) is calculated with this analyzing program. The variation of carrier concentration, potential and current distribution during switching process is clarified. Their dependency on device parameters and its dimensions are studied. The current squeeze and concentration during turn-off in GTO could be related to the gate structure. Effective channel width of SIT also can be determined through numerical analysis. |
