EPE Association: EPE 2020 - DS2b: System Integration, Packaging & Thermal Management

EPE 2020 - DS2b: System Integration, Packaging & Thermal Management
You are here: EPE Documents > 01 - EPE & EPE ECCE Conference Proceedings > EPE 2020 ECCE Europe - Conference > EPE 2020 - Topic 01: Devices, Packaging and System Integration > EPE 2020 - DS2b: System Integration, Packaging & Thermal Management

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   Efficiency Requirements for Passively Cooled Converters with Thermal Measurement Based 3D-FEM Simulation
By Julian WEIMER [View]
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Abstract: Passively cooled housings for modern power electronic converters with high power density require maximum heat dissipation over little surface area. To determine the power dissipation budget, this paper presents thermal measurement based convection modeling with temperature dependent heat transfer coefficients and the derivation of efficiency requirements for given housing dimensions.

   Electrical property variability of GaN transistors in parallel and their impact on fast switching operations
By Thilini WICKRAMASINGHE [View]
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Abstract: In this paper, the impact of paralleling nonidentical Gallium Nitride High Electron Mobility transistors (GaN HEMTs) in a high-speed switch is investigated. GaN HEMTs with a packaged p-gate and a die of MIS-gate types are being evaluated theoretically. The p-type simulation results are verified with experimental prototype of a fast switching cell.

   Fail-safe switching-cells architectures based on monolithic on-chip fuse
By Amirouche OUMAZIZ [View]
[Download]

Abstract: In this work, we propose a new concept of fail-safe switching cells based on the use of integrated fuses. These fuses allow the circuit to be partially isolated and reconfigured, which therefore becomes fault tolerant and prevents total shut down. We focused our work on the design and 3D simulation by finite elements method of monolithic fuses integrated on silicon substrate, taking into account static and dynamic specifications. Thermal management in steady state is improved by dielectric epoxy thermal insulation under each constriction of the fuse. Implementation and preliminary practical tests at medium voltage are reported. The effect of a coating using silicone gel around the fuses is analyzed to improve the cut-off capability.

   Implementation of TAPIR switching cells with integrated direct air-cooling for SiC power devices
By Wendpanga Fadel BIKINGA [View]
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Abstract: This paper presents the design of an SiC switching cell made with the TAPIR technology. Electromagnetic and thermal simulations are carried out in order to analyze the performance of this switching cell. This cell is then compared to commercial power modules and discrete components and exhibits excellent junction to ambient thermal resistance and stray inductance.

   Thermal impedances and temperature sensors: a combined approach for a novel thermal model of power semiconductors
By Maria DE LAURETIS [View]
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Abstract: Power semiconductors, or transistors, constitute the core part of adjustable speed drives, which are commonly used in motor drive applications. Overheat of the semiconductors can compromise their behavior and, eventually, shorten the lifespan of the whole system.Therefore, the thermal management of transistors is crucial both at the design stage and during operation.Commonly performed thermal simulations normally rely on transistor thermal resistance.However, this approach does not account for the thermal behavior in transient regime.Furthermore, it is inappropriate for intermittent applications, such as for drilling machines, where the motor is on and off in repetitive working cycles, and the transistors never reach the equilibrium temperature.The transient thermal behavior is described by the concept of transfer thermal impedance.The transfer junction-to-case thermal impedance is given in the datasheet and assumes a constant ambient temperature; an assumption that is, however, not true in real applications.In this paper, we overcome this main limitation by using a resistive sensor. We consider MOSFETs in a 3-phase inverter, and model their thermal behavior with a well-known algorithm that uses the junction-to-case and junction-to-ambient thermal impedances, along with application dependent parameters.The actual rise of ambient temperature of the circuit board is included in the algorithm by virtue of the resistive sensor.The method has been validated with lab measurements, for two different MOSFETs.The proposed method can be used both at the design stage and during operation of the motor drive.Future works will include refinements of the power loss formulas, of the junction-to-ambient impedance modeling, as well as aging effects of the transistors.

EPE 2020 - DS2b: System Integration, Packaging & Thermal Management
You are here: EPE Documents > 01 - EPE & EPE ECCE Conference Proceedings > EPE 2020 ECCE Europe - Conference > EPE 2020 - Topic 01: Devices, Packaging and System Integration > EPE 2020 - DS2b: System Integration, Packaging & Thermal Management
	[return to parent folder]

	Efficiency Requirements for Passively Cooled Converters with Thermal Measurement Based 3D-FEM Simulation By Julian WEIMER	[View] [Download]
Abstract: Passively cooled housings for modern power electronic converters with high power density require maximum heat dissipation over little surface area. To determine the power dissipation budget, this paper presents thermal measurement based convection modeling with temperature dependent heat transfer coefficients and the derivation of efficiency requirements for given housing dimensions.

	Electrical property variability of GaN transistors in parallel and their impact on fast switching operations By Thilini WICKRAMASINGHE	[View] [Download]
Abstract: In this paper, the impact of paralleling nonidentical Gallium Nitride High Electron Mobility transistors (GaN HEMTs) in a high-speed switch is investigated. GaN HEMTs with a packaged p-gate and a die of MIS-gate types are being evaluated theoretically. The p-type simulation results are verified with experimental prototype of a fast switching cell.

	Fail-safe switching-cells architectures based on monolithic on-chip fuse By Amirouche OUMAZIZ	[View] [Download]
Abstract: In this work, we propose a new concept of fail-safe switching cells based on the use of integrated fuses. These fuses allow the circuit to be partially isolated and reconfigured, which therefore becomes fault tolerant and prevents total shut down. We focused our work on the design and 3D simulation by finite elements method of monolithic fuses integrated on silicon substrate, taking into account static and dynamic specifications. Thermal management in steady state is improved by dielectric epoxy thermal insulation under each constriction of the fuse. Implementation and preliminary practical tests at medium voltage are reported. The effect of a coating using silicone gel around the fuses is analyzed to improve the cut-off capability.

	Implementation of TAPIR switching cells with integrated direct air-cooling for SiC power devices By Wendpanga Fadel BIKINGA	[View] [Download]
Abstract: This paper presents the design of an SiC switching cell made with the TAPIR technology. Electromagnetic and thermal simulations are carried out in order to analyze the performance of this switching cell. This cell is then compared to commercial power modules and discrete components and exhibits excellent junction to ambient thermal resistance and stray inductance.

	Thermal impedances and temperature sensors: a combined approach for a novel thermal model of power semiconductors By Maria DE LAURETIS	[View] [Download]
Abstract: Power semiconductors, or transistors, constitute the core part of adjustable speed drives, which are commonly used in motor drive applications. Overheat of the semiconductors can compromise their behavior and, eventually, shorten the lifespan of the whole system.Therefore, the thermal management of transistors is crucial both at the design stage and during operation.Commonly performed thermal simulations normally rely on transistor thermal resistance.However, this approach does not account for the thermal behavior in transient regime.Furthermore, it is inappropriate for intermittent applications, such as for drilling machines, where the motor is on and off in repetitive working cycles, and the transistors never reach the equilibrium temperature.The transient thermal behavior is described by the concept of transfer thermal impedance.The transfer junction-to-case thermal impedance is given in the datasheet and assumes a constant ambient temperature; an assumption that is, however, not true in real applications.In this paper, we overcome this main limitation by using a resistive sensor. We consider MOSFETs in a 3-phase inverter, and model their thermal behavior with a well-known algorithm that uses the junction-to-case and junction-to-ambient thermal impedances, along with application dependent parameters.The actual rise of ambient temperature of the circuit board is included in the algorithm by virtue of the resistive sensor.The method has been validated with lab measurements, for two different MOSFETs.The proposed method can be used both at the design stage and during operation of the motor drive.Future works will include refinements of the power loss formulas, of the junction-to-ambient impedance modeling, as well as aging effects of the transistors.