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Electrical property variability of GaN transistors in parallel and their impact on fast switching operations
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| Author(s) |
Thilini WICKRAMASINGHE |
| Abstract |
In this paper, the impact of paralleling nonidentical Gallium Nitride High Electron Mobility transistors (GaN HEMTs) in a high-speed switch is investigated. GaN HEMTs with a packaged p-gate and a die of MIS-gate types are being evaluated theoretically. The p-type simulation results are verified with experimental prototype of a fast switching cell. |
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| Filename: | 0274-epe2020-full-17412519.pdf |
| Filesize: | 1.89 MB |
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| Type |
Members Only |
| Date |
Last modified 2021-01-18 by System |
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