EPE Association: EPE 2020 - LS2a: Wide Bandgap Power Converters

EPE 2020 - LS2a: Wide Bandgap Power Converters
You are here: EPE Documents > 01 - EPE & EPE ECCE Conference Proceedings > EPE 2020 ECCE Europe - Conference > EPE 2020 - Topic 02: Power Converter Topologies and Design > EPE 2020 - LS2a: Wide Bandgap Power Converters

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   Daisy Chain PN Cell for Multilevel Converter using GaN for High Power Density
By FAHEEM AHMAD [View]
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Abstract: Power semiconductor devices are achieving high switching speed and high breakdown voltage. This improves inverter performance. But, as inverter improves, further challenge of dv/dt noise is generated that needs to be tackled by filter stage. Multilevel inverters can solve this challenge. But there are implementation complexity associated with multilevel topologies like requirement of multiple isolated DC source,complicated charging algorithm, dedicated sensing hardware. This paper presents a switch capacitor type converter topology enabling a dc-ac three level output. Joining multiple iteration of topology in daisy-chained configuration, the converter can achieve voltage gain with multilevel waveform. Requirement of a single DC supply, with inherent charge balancing capability on capacitor, the topology is well suited for low voltage renewable sources like photovoltaic (PV) or fuel cell. The paper presents design of high frequency commutation loop. Utilizing finite element analysis (FEA) tool ANSYS Electronics Desktop(Q3D) to extract PCB parasitics helps in eliminating prototyping cost and time. Designed inverter is then subjected to continuous load test where it shows improving performance with increasing inductive load.

   Inductor Size Evaluation of an Electromagnetic Interference Filter for a Two-Level Power Factor Correction Rectifier Using Different Modulation Techniques
By Mohammad NAJJAR [View]
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Abstract: Wide band-gap semiconductors exhibit superior performance compared to their silicon counterparts, which has enabled converters to work at higher switching frequencies. However, a higher switching frequency means larger harmonics in the electromagnetic interference (EMI) range which may lead to the need for a larger EMI filter. This paper has essentially two main purposes: to find the impact of switching frequency (swept from 40 kHz to 300 kHz) on the size of EMI filter (especially the inductor part of it) and to evaluate the size using different modulation techniques. This paper shows that the effect of increasing the switching frequency on the size of EMI filter is not linear. The differential mode filter part of EMI filter results differently against the common mode filter part of it when the switching frequency and modulation technique changes. Therefore, depending on the application a suitable modulation and frequency can be picked to result an optimum filter. To support the method of the filter design, a filter is designed and built for a 5kW two-level power factor correction rectifier and the design is supported with EMI measurement on the unit.

   Loss Separation in Hard- and Soft-Switching GaN HEMTs operated in a 10 kW Isolated DC/DC Converter
By Jan BÖCKER [View]
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Abstract: In this paper, GaN power transistors are operated in a 10 kW isolated DC/DC converter, investigatingtheir loss distribution. Based on a combination of calorimetric loss-, and clamped drain source voltage measurements, the losses are separated in conduction and switching losses. Furthermore, the influence of dynamic Ron effects is identified during continuous operation. The chosen ZCZVS topology allows for comparison of hard- and soft-switching operation of the GaN devices. The loss separation reveals almost twice of additional dynamic Ron losses in the hard switching leg. In this case, the dynamic losses account for about one third of the conduction losses.

   Performance Analysis of RL Damper in GaN-Based High-Frequency Boost Converter
By Alonso GUTIERREZ GALEANO [View]
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Abstract: This paper analyzes a high-frequency GaN-based boost converter considering an RL damper to mitigate critical oscillations. This work aims contributing with graphical correlations between power converter signals and root trajectories of the characteristic equation in the main oscillation loop. Results provide insights about the RL damper design to improve the power converter performance. A technical contribution shows that the highest efficiency depends on the lowest L and the highest R of the RL damper able to produce a damping operation. Additionally, simulation results demonstrate the improvement of the GaN-HEMT operation and reliability using an RL damper in a boost converter topology. An experimental GaN-based boost converter validates the developed study.

EPE 2020 - LS2a: Wide Bandgap Power Converters
You are here: EPE Documents > 01 - EPE & EPE ECCE Conference Proceedings > EPE 2020 ECCE Europe - Conference > EPE 2020 - Topic 02: Power Converter Topologies and Design > EPE 2020 - LS2a: Wide Bandgap Power Converters
	[return to parent folder]

	Daisy Chain PN Cell for Multilevel Converter using GaN for High Power Density By FAHEEM AHMAD	[View] [Download]
Abstract: Power semiconductor devices are achieving high switching speed and high breakdown voltage. This improves inverter performance. But, as inverter improves, further challenge of dv/dt noise is generated that needs to be tackled by filter stage. Multilevel inverters can solve this challenge. But there are implementation complexity associated with multilevel topologies like requirement of multiple isolated DC source,complicated charging algorithm, dedicated sensing hardware. This paper presents a switch capacitor type converter topology enabling a dc-ac three level output. Joining multiple iteration of topology in daisy-chained configuration, the converter can achieve voltage gain with multilevel waveform. Requirement of a single DC supply, with inherent charge balancing capability on capacitor, the topology is well suited for low voltage renewable sources like photovoltaic (PV) or fuel cell. The paper presents design of high frequency commutation loop. Utilizing finite element analysis (FEA) tool ANSYS Electronics Desktop(Q3D) to extract PCB parasitics helps in eliminating prototyping cost and time. Designed inverter is then subjected to continuous load test where it shows improving performance with increasing inductive load.

	Inductor Size Evaluation of an Electromagnetic Interference Filter for a Two-Level Power Factor Correction Rectifier Using Different Modulation Techniques By Mohammad NAJJAR	[View] [Download]
Abstract: Wide band-gap semiconductors exhibit superior performance compared to their silicon counterparts, which has enabled converters to work at higher switching frequencies. However, a higher switching frequency means larger harmonics in the electromagnetic interference (EMI) range which may lead to the need for a larger EMI filter. This paper has essentially two main purposes: to find the impact of switching frequency (swept from 40 kHz to 300 kHz) on the size of EMI filter (especially the inductor part of it) and to evaluate the size using different modulation techniques. This paper shows that the effect of increasing the switching frequency on the size of EMI filter is not linear. The differential mode filter part of EMI filter results differently against the common mode filter part of it when the switching frequency and modulation technique changes. Therefore, depending on the application a suitable modulation and frequency can be picked to result an optimum filter. To support the method of the filter design, a filter is designed and built for a 5kW two-level power factor correction rectifier and the design is supported with EMI measurement on the unit.

	Loss Separation in Hard- and Soft-Switching GaN HEMTs operated in a 10 kW Isolated DC/DC Converter By Jan BÖCKER	[View] [Download]
Abstract: In this paper, GaN power transistors are operated in a 10 kW isolated DC/DC converter, investigatingtheir loss distribution. Based on a combination of calorimetric loss-, and clamped drain source voltage measurements, the losses are separated in conduction and switching losses. Furthermore, the influence of dynamic Ron effects is identified during continuous operation. The chosen ZCZVS topology allows for comparison of hard- and soft-switching operation of the GaN devices. The loss separation reveals almost twice of additional dynamic Ron losses in the hard switching leg. In this case, the dynamic losses account for about one third of the conduction losses.

	Performance Analysis of RL Damper in GaN-Based High-Frequency Boost Converter By Alonso GUTIERREZ GALEANO	[View] [Download]
Abstract: This paper analyzes a high-frequency GaN-based boost converter considering an RL damper to mitigate critical oscillations. This work aims contributing with graphical correlations between power converter signals and root trajectories of the characteristic equation in the main oscillation loop. Results provide insights about the RL damper design to improve the power converter performance. A technical contribution shows that the highest efficiency depends on the lowest L and the highest R of the RL damper able to produce a damping operation. Additionally, simulation results demonstrate the improvement of the GaN-HEMT operation and reliability using an RL damper in a boost converter topology. An experimental GaN-based boost converter validates the developed study.