EPE Association: EPE 2020 - DS3f: Measurement Techniques and Condition Monitoring

EPE 2020 - DS3f: Measurement Techniques and Condition Monitoring
You are here: EPE Documents > 01 - EPE & EPE ECCE Conference Proceedings > EPE 2020 ECCE Europe - Conference > EPE 2020 - Topic 03: Measurement and Control > EPE 2020 - DS3f: Measurement Techniques and Condition Monitoring

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   Challenges in Calibrating an Unconventional Partial Discharge Measurement System for Pulsed Voltages
By Markus FÜRST [View]
[Download]

Abstract: In this paper, the signal of an unconventional partial discharge (PD) sensor is analysed on characteristic parameters both in time domain and frequency domain. This is done to find correlations to the standardised apparent charge qa according to IEC 60270 and therefore make the used unconventional PD measurement system comparable to the conventional system. The benefit of the unconventional PD sensor is that it can be used even with pulsed voltage waveforms containing high switching noise due to high dV/dt . Therefore, a calibration of this system would enable a fair comparison to conventional sine wave test stands. The measurements for this investigation are mainly performed in a conventional sine wave test stand, where both PD measurement systems are mounted to compare their signals. As unconventional PD sensor a self-built PD Rogowski sensor with a high bandwidth is used. The characteristic parameters considered and analysed in the time domain are mainly the PD waveform, its time integral, the maximum and average peak amplitude of single PD events, the here introduced "average PD event" as well as the absolute PD quantity. In the frequency domain it is analysed if there are characteristic frequency bands, where the signal intensity correlates with the apparent charge. The derived findings are then examined further using only the unconventional sensor in a test stand for pulsed voltage waveforms.

   Combining multiple temperature-sensitive electrical parameters using artificial neural networks
By Daniel HERWIG [View]
[Download]

Abstract: Temperature-Sensitive Electrical Parameters (TSEPs) are often discussed for on-line determination of the junction temperature of semiconductors, and as key parameters for condition monitoring. This paper focuses on the combination of several simultaneously captured TSEPs using Artificial Neural Networks(ANNs) to reduce cross-dependencies and improve accuracy.

   Digital smart driver for SiC MOSFETs
By Nerea ARANDIA [View]
[Download]

Abstract: This paper presents a new concept of an isolated smart gate driver platform for SiC (Silicon Carbide) MOSFETs. It describes the required hardware to implement advanced functions to improve converter performance, switching behavior and reliability. It also includes GHz bandwidth voltage monitorization and low speed current and temperature monitorization.

   Error Induced by the Optical Path of a High Accuracy and High Bandwidth Optical Current Measurement System
By Stefan RIETMANN [View]
[Download]

Abstract: Birefringence and optical losses in the optical sensor head of a Faraday effect based, high accuracy and high bandwidth current measurement system lead to changes of the polarisation state and orientation. These changes, if not properly determined and calibrated, lead to systematic measurement errors. Therefore, a calibration method for the optical current measurement system focusing on pulse current applications is proposed. The procedure is based on a zero-current measurement and a full (Stokes) polarimeter. It determines the full polarisation state and orientation of a beam propagating through the optical system. The calibration method then allows to determine the parasitic linear birefringence caused by any subsequent optical element in the system. Eventually, an error analysis characterising the potential error reduction by the proposed calibration method is conducted. Further, the additionally introduced error sources caused by the full polarimeter approach are characterised.

   Improvements on signal-to-noise ratio in feedback measurement in DC/DC converters
By Fernando DAVALOS [View]
[Download]

Abstract: This paper presents different techniques for sensing the feedback signals of isolated DC/DC converters. It proposes a method for sensing feedback signals with a better accuracy using a high voltage reference and compares the traditional measuring chain with two other options that improve the signal-to-noise (SNR) significantly. A theoretical analysis and experimental tests are presented. The results confirm that the proposed HV reference method improves the accuracy notably.

   Low Voltage GaN-Based Gate Driver to Increase Switching Speed of Paralleled 650 V E-mode GaN HEMTs
By Raffael RISCH [View]
[Download]

Abstract: Using GaN HEMTs in high current applications, such as pulsed power modulators for particle accelerator systems, requires the parallelization of multiple devices. In order to achieve a dynamically balanced current distribution between the parallel devices, synchronized gate voltages are crucial. Furthermore, the high switching speeds, which are often required in pulsed power systems, requires a high driving current capability and fast rise/fall times of the gate driver. Therefore, this paper presents a gate driver, based on a low voltage GaN HEMT half bridge, for driving four paralleled 650V e-mode GaN HEMTs in a low inductive switching cell design.

EPE 2020 - DS3f: Measurement Techniques and Condition Monitoring
You are here: EPE Documents > 01 - EPE & EPE ECCE Conference Proceedings > EPE 2020 ECCE Europe - Conference > EPE 2020 - Topic 03: Measurement and Control > EPE 2020 - DS3f: Measurement Techniques and Condition Monitoring
	[return to parent folder]

	Challenges in Calibrating an Unconventional Partial Discharge Measurement System for Pulsed Voltages By Markus FÜRST	[View] [Download]
Abstract: In this paper, the signal of an unconventional partial discharge (PD) sensor is analysed on characteristic parameters both in time domain and frequency domain. This is done to find correlations to the standardised apparent charge qa according to IEC 60270 and therefore make the used unconventional PD measurement system comparable to the conventional system. The benefit of the unconventional PD sensor is that it can be used even with pulsed voltage waveforms containing high switching noise due to high dV/dt . Therefore, a calibration of this system would enable a fair comparison to conventional sine wave test stands. The measurements for this investigation are mainly performed in a conventional sine wave test stand, where both PD measurement systems are mounted to compare their signals. As unconventional PD sensor a self-built PD Rogowski sensor with a high bandwidth is used. The characteristic parameters considered and analysed in the time domain are mainly the PD waveform, its time integral, the maximum and average peak amplitude of single PD events, the here introduced "average PD event" as well as the absolute PD quantity. In the frequency domain it is analysed if there are characteristic frequency bands, where the signal intensity correlates with the apparent charge. The derived findings are then examined further using only the unconventional sensor in a test stand for pulsed voltage waveforms.

	Combining multiple temperature-sensitive electrical parameters using artificial neural networks By Daniel HERWIG	[View] [Download]
Abstract: Temperature-Sensitive Electrical Parameters (TSEPs) are often discussed for on-line determination of the junction temperature of semiconductors, and as key parameters for condition monitoring. This paper focuses on the combination of several simultaneously captured TSEPs using Artificial Neural Networks(ANNs) to reduce cross-dependencies and improve accuracy.

	Digital smart driver for SiC MOSFETs By Nerea ARANDIA	[View] [Download]
Abstract: This paper presents a new concept of an isolated smart gate driver platform for SiC (Silicon Carbide) MOSFETs. It describes the required hardware to implement advanced functions to improve converter performance, switching behavior and reliability. It also includes GHz bandwidth voltage monitorization and low speed current and temperature monitorization.

	Error Induced by the Optical Path of a High Accuracy and High Bandwidth Optical Current Measurement System By Stefan RIETMANN	[View] [Download]
Abstract: Birefringence and optical losses in the optical sensor head of a Faraday effect based, high accuracy and high bandwidth current measurement system lead to changes of the polarisation state and orientation. These changes, if not properly determined and calibrated, lead to systematic measurement errors. Therefore, a calibration method for the optical current measurement system focusing on pulse current applications is proposed. The procedure is based on a zero-current measurement and a full (Stokes) polarimeter. It determines the full polarisation state and orientation of a beam propagating through the optical system. The calibration method then allows to determine the parasitic linear birefringence caused by any subsequent optical element in the system. Eventually, an error analysis characterising the potential error reduction by the proposed calibration method is conducted. Further, the additionally introduced error sources caused by the full polarimeter approach are characterised.

	Improvements on signal-to-noise ratio in feedback measurement in DC/DC converters By Fernando DAVALOS	[View] [Download]
Abstract: This paper presents different techniques for sensing the feedback signals of isolated DC/DC converters. It proposes a method for sensing feedback signals with a better accuracy using a high voltage reference and compares the traditional measuring chain with two other options that improve the signal-to-noise (SNR) significantly. A theoretical analysis and experimental tests are presented. The results confirm that the proposed HV reference method improves the accuracy notably.

	Low Voltage GaN-Based Gate Driver to Increase Switching Speed of Paralleled 650 V E-mode GaN HEMTs By Raffael RISCH	[View] [Download]
Abstract: Using GaN HEMTs in high current applications, such as pulsed power modulators for particle accelerator systems, requires the parallelization of multiple devices. In order to achieve a dynamically balanced current distribution between the parallel devices, synchronized gate voltages are crucial. Furthermore, the high switching speeds, which are often required in pulsed power systems, requires a high driving current capability and fast rise/fall times of the gate driver. Therefore, this paper presents a gate driver, based on a low voltage GaN HEMT half bridge, for driving four paralleled 650V e-mode GaN HEMTs in a low inductive switching cell design.