EPE Association: EPE 2020 - DS1e-1: Wide Bandgap Power Electronics-1

EPE 2020 - DS1e-1: Wide Bandgap Power Electronics-1
You are here: EPE Documents > 01 - EPE & EPE ECCE Conference Proceedings > EPE 2020 ECCE Europe - Conference > EPE 2020 - Topic 02: Power Converter Topologies and Design > EPE 2020 - DS1e-1: Wide Bandgap Power Electronics-1

   [return to parent folder]

   An Ultra-Fast Gate Driver with Over Current Protection for GaN Power Transistors
By Qingqing NIE [View]
[Download]

Abstract: A PCB integrated GaN gate driver module is proposed to realize fast driving and protection with highly concise system architecture. The PCB based air-coil coupled inductor is adopted as current sensor for ultra-large bandwidth and very compact size. The over-current protection approach proposed in this paper contains only three function blocks enabling very fast response. Low voltage GaN power transistors are used in gate driver circuit. The proposed driver module has the advantages of high speed, prompted response, and low driver loss. This module can also be further integrated with power switch on the same substrate.

   HIGH PERFORMANCE DRIVE INVERTER FOR AN ELECTRIC TURBO COMPRESSOR IN FUEL CELL APPLICATIONS
By Niklas LANGMAACK [View]
[Download]

Abstract: In this paper the design of a high performance drive inverter with special requirements in terms of switching speed, power density and efficiency is presented. Solutions using different topologies, device technologies and packages are compared under the constraints given by the application. Finally an application specific optimum is found.

   Limits of enhanced desaturation detection method with adaptive blanking for GaN HEMTs
By Jan SCHMITZ [View]
[Download]

Abstract: A fast short circuit detection method was presented. This method is based on the desaturation detectionwith gate-voltage monitoring for adaptive blanking. Based on simulations in LTspice, firstmeasurements have shown a proper working of the enhanced desaturation detection method. Detailedinvestigations have shown false detections in some normal operating points. The most relevantinfluences for false detections in normal operating mode besides EMI noise are common sourcecouplings, drain currents above the nominal value and the temperature of the GaN device. This paperpresents the limits of the proposed short circuit detection method for proper working in detail.

   Modeling of SiC-MOSFET Converter Leg Including Parasitics of Printed Circuit Board Layout and Device Packaging
By Mario PULVIRENTI [View]
[Download]

Abstract: The aim of this paper is to provide an accurate analytical modeling of a Silicon Carbide MOSFETs-based half bridge converter including all the major contributions due to parasitic elements of device package and PCB layout. The turn on and off switching transients as well as the on-state conduction are mathematically described, implemented in Matlab and validated through a wide experimental tests campaign.

EPE 2020 - DS1e-1: Wide Bandgap Power Electronics-1
You are here: EPE Documents > 01 - EPE & EPE ECCE Conference Proceedings > EPE 2020 ECCE Europe - Conference > EPE 2020 - Topic 02: Power Converter Topologies and Design > EPE 2020 - DS1e-1: Wide Bandgap Power Electronics-1
	[return to parent folder]

	An Ultra-Fast Gate Driver with Over Current Protection for GaN Power Transistors By Qingqing NIE	[View] [Download]
Abstract: A PCB integrated GaN gate driver module is proposed to realize fast driving and protection with highly concise system architecture. The PCB based air-coil coupled inductor is adopted as current sensor for ultra-large bandwidth and very compact size. The over-current protection approach proposed in this paper contains only three function blocks enabling very fast response. Low voltage GaN power transistors are used in gate driver circuit. The proposed driver module has the advantages of high speed, prompted response, and low driver loss. This module can also be further integrated with power switch on the same substrate.

	HIGH PERFORMANCE DRIVE INVERTER FOR AN ELECTRIC TURBO COMPRESSOR IN FUEL CELL APPLICATIONS By Niklas LANGMAACK	[View] [Download]
Abstract: In this paper the design of a high performance drive inverter with special requirements in terms of switching speed, power density and efficiency is presented. Solutions using different topologies, device technologies and packages are compared under the constraints given by the application. Finally an application specific optimum is found.

	Limits of enhanced desaturation detection method with adaptive blanking for GaN HEMTs By Jan SCHMITZ	[View] [Download]
Abstract: A fast short circuit detection method was presented. This method is based on the desaturation detectionwith gate-voltage monitoring for adaptive blanking. Based on simulations in LTspice, firstmeasurements have shown a proper working of the enhanced desaturation detection method. Detailedinvestigations have shown false detections in some normal operating points. The most relevantinfluences for false detections in normal operating mode besides EMI noise are common sourcecouplings, drain currents above the nominal value and the temperature of the GaN device. This paperpresents the limits of the proposed short circuit detection method for proper working in detail.

	Modeling of SiC-MOSFET Converter Leg Including Parasitics of Printed Circuit Board Layout and Device Packaging By Mario PULVIRENTI	[View] [Download]
Abstract: The aim of this paper is to provide an accurate analytical modeling of a Silicon Carbide MOSFETs-based half bridge converter including all the major contributions due to parasitic elements of device package and PCB layout. The turn on and off switching transients as well as the on-state conduction are mathematically described, implemented in Matlab and validated through a wide experimental tests campaign.