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Limits of enhanced desaturation detection method with adaptive blanking for GaN HEMTs
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| Author(s) |
Jan SCHMITZ |
| Abstract |
A fast short circuit detection method was presented. This method is based on the desaturation detectionwith gate-voltage monitoring for adaptive blanking. Based on simulations in LTspice, firstmeasurements have shown a proper working of the enhanced desaturation detection method. Detailedinvestigations have shown false detections in some normal operating points. The most relevantinfluences for false detections in normal operating mode besides EMI noise are common sourcecouplings, drain currents above the nominal value and the temperature of the GaN device. This paperpresents the limits of the proposed short circuit detection method for proper working in detail. |
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| Filename: | 0026-epe2020-full-13042468.pdf |
| Filesize: | 2.066 MB |
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| Type |
Members Only |
| Date |
Last modified 2021-01-18 by System |
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