EPE Association: EPE 2020 - DS1b-2: Reliability & Life-Time-2

EPE 2020 - DS1b-2: Reliability & Life-Time-2
You are here: EPE Documents > 01 - EPE & EPE ECCE Conference Proceedings > EPE 2020 ECCE Europe - Conference > EPE 2020 - Topic 01: Devices, Packaging and System Integration > EPE 2020 - DS1b-2: Reliability & Life-Time-2

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   A facility for mixed flowing gas testing of and experimentation with power electronic components and systems
By Juuso RAUTIO [View]
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Abstract: Corrosion phenomena have been found to inflict new types of failures on power electronics. Currently, the precise corrosion mechanisms and effects causing problems are largely unknown. A facility dedicated for environmental reliability and lifetime testing of power electronic components and systems is presented.

   IGBT Lifetime Estimation in a Modular Multilevel Converter for bidirectional point-to-point HVDC application
By Diego VELAZCO [View]
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Abstract: This paper deals with the lifetime estimation of one modular multilevel converter submodule in a bidirectional point-to-point HVDC application. A mission profile of a reversible link is considered, then power losses are calculated and an electro-thermal simulation is carried out. Finally, a rain flow counting method is used for organizing thermal profiles and the life consumption is computed thanks to a new extrapolation method of aging data coming from manufacturer and the application of the Miner's rule.

   Junction Temperature Control Strategy for Lifetime Extension of Power Semiconductor Devices
By Johannes RUTHARDT [View]
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Abstract: The lifetime of power semiconductor devices mainly depends on their thermal stress. In particular, temperature swings cause damage due to different coefficients of thermal expansion of the different materials, which are used in power semiconductor devices. These temperature swings occur when the environmental temperature or the load conditions and with them the power losses change. Junction temperature controllers are able to extend the expected lifetime by reducing the occurring temperature swings. This paper proposes two control strategies to calculate a suitable set value for junction temperature controllers, which leads to a smoother temperature course with fewer swings. Both strategies do not affect the normal operation by for example limiting the output parameters. They affect the efficiency of the power electronic circuit to influence the power losses and thermal conditions.

   Long-Term Climate Impact On IGBT Lifetime
By Martin KJÆR [View]
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Abstract: Considerable efforts have been made to estimate the lifetime of power devices, e.g., IGBTs, whenthey are subjected to a specific loading profile, which is affected by real field mission profiles. Inthose cases, a yearly mission profile, e.g., ambient temperatures, wind speeds and solar irradiancelevels, is adopted. However, the prior art assumes that the same accumulated damage is caused ineach year during the operation of the solutions. In practice the mission profile will vary, makingthe assumption invalid. This paper thus examines the assumption of equally distributed damageaccumulation throughout the lifetime, by analyzing multiple years of mission profiles.

   Temperature Evolution as an effect of Wire-bond Failures in a Multi-Chip IGBT Power Module
By Nicolas DEGRENNE [View]
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Abstract: Multi-chip power switches consist of several dies in parallel. The temperature of these dies is not equal and evolves during ageing, in part as a consequence of wire-bond degradation. The temperature distribution may impact the condition monitoring and the overall reliability. It is thus necessary to understand how the temperature distribution is modified by wire-bond degradation. In this paper, wire-bond lift-offs are reproduced experimentally by sequentially sectioning the hottest wire of the hottest die of a multi-chip IGBT module. The results show that at the beginning of the degradation, hot spots move away from the more recent wire-bond lift-off, contributing to temperature equalization. However, this effect collapses as fewer bonds remain attached towards the end of the module life.

EPE 2020 - DS1b-2: Reliability & Life-Time-2
You are here: EPE Documents > 01 - EPE & EPE ECCE Conference Proceedings > EPE 2020 ECCE Europe - Conference > EPE 2020 - Topic 01: Devices, Packaging and System Integration > EPE 2020 - DS1b-2: Reliability & Life-Time-2
	[return to parent folder]

	A facility for mixed flowing gas testing of and experimentation with power electronic components and systems By Juuso RAUTIO	[View] [Download]
Abstract: Corrosion phenomena have been found to inflict new types of failures on power electronics. Currently, the precise corrosion mechanisms and effects causing problems are largely unknown. A facility dedicated for environmental reliability and lifetime testing of power electronic components and systems is presented.

	IGBT Lifetime Estimation in a Modular Multilevel Converter for bidirectional point-to-point HVDC application By Diego VELAZCO	[View] [Download]
Abstract: This paper deals with the lifetime estimation of one modular multilevel converter submodule in a bidirectional point-to-point HVDC application. A mission profile of a reversible link is considered, then power losses are calculated and an electro-thermal simulation is carried out. Finally, a rain flow counting method is used for organizing thermal profiles and the life consumption is computed thanks to a new extrapolation method of aging data coming from manufacturer and the application of the Miner's rule.

	Junction Temperature Control Strategy for Lifetime Extension of Power Semiconductor Devices By Johannes RUTHARDT	[View] [Download]
Abstract: The lifetime of power semiconductor devices mainly depends on their thermal stress. In particular, temperature swings cause damage due to different coefficients of thermal expansion of the different materials, which are used in power semiconductor devices. These temperature swings occur when the environmental temperature or the load conditions and with them the power losses change. Junction temperature controllers are able to extend the expected lifetime by reducing the occurring temperature swings. This paper proposes two control strategies to calculate a suitable set value for junction temperature controllers, which leads to a smoother temperature course with fewer swings. Both strategies do not affect the normal operation by for example limiting the output parameters. They affect the efficiency of the power electronic circuit to influence the power losses and thermal conditions.

	Long-Term Climate Impact On IGBT Lifetime By Martin KJÆR	[View] [Download]
Abstract: Considerable efforts have been made to estimate the lifetime of power devices, e.g., IGBTs, whenthey are subjected to a specific loading profile, which is affected by real field mission profiles. Inthose cases, a yearly mission profile, e.g., ambient temperatures, wind speeds and solar irradiancelevels, is adopted. However, the prior art assumes that the same accumulated damage is caused ineach year during the operation of the solutions. In practice the mission profile will vary, makingthe assumption invalid. This paper thus examines the assumption of equally distributed damageaccumulation throughout the lifetime, by analyzing multiple years of mission profiles.

	Temperature Evolution as an effect of Wire-bond Failures in a Multi-Chip IGBT Power Module By Nicolas DEGRENNE	[View] [Download]
Abstract: Multi-chip power switches consist of several dies in parallel. The temperature of these dies is not equal and evolves during ageing, in part as a consequence of wire-bond degradation. The temperature distribution may impact the condition monitoring and the overall reliability. It is thus necessary to understand how the temperature distribution is modified by wire-bond degradation. In this paper, wire-bond lift-offs are reproduced experimentally by sequentially sectioning the hottest wire of the hottest die of a multi-chip IGBT module. The results show that at the beginning of the degradation, hot spots move away from the more recent wire-bond lift-off, contributing to temperature equalization. However, this effect collapses as fewer bonds remain attached towards the end of the module life.