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 EPE 2019 - LS6a: Measurements Techniques & Sensors 
 You are here: EPE Documents > 01 - EPE & EPE ECCE Conference Proceedings > EPE 2019 ECCE Europe - Conference > EPE 2019 - Topic 03: Measurement and Control > EPE 2019 - LS6a: Measurements Techniques & Sensors 
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   Nanoscale investigation of power semiconductor devices by scanning capacitance force microscopy 
 By Nobuo SATOH 
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Abstract: The power semiconductor devices are progressing toward high-withstand voltage using wide bandgap semiconductor materials, and multi-parallel integration by microfabrication technique. We succeeded in nanoscale observation of the power semiconductor device under the bias voltage applied using by the scanning probe microscope based on combined with AFM/KFM/SCFM that achieved high spatial-resolution and high sensitivity.

 
   Optimisation and Real Life Challenges of an Integrated Parasitics Based Current Measurement System 
 By Frank LAUTNER 
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Abstract: This paper presents new technological enhancements for current sensing by means of the parasitic inductance of a semiconductor module. Across this measurement section, a signal, which is proportional to di/dt, can be tapped. Traditionally, the connections for emitter (E) and auxiliary emitter (E') of an IGBT module are used. The measured signal has to be processed with an integrating component to get the reconstructed current. Doing this, many peculiarities and challenges of this method arise, which have to be overcome when the accuracy of state of the art current sensors must be reached. A first error source is the parasitic resistance in the measurement section, which makes it impossible to use a simple integrator. However, it was found that also an active low pass filter, which seems to be a more appropriate integrator, cannot be adapted in such a manner that an exact representation of the current is possible. Resulting from this, an exact timing of the integrator's output is necessary to get an error-resistant current signal, which may be used for the control loop. Also further approaches are presented in this paper, which try to mitigate the module temperature dependence of the current sensing method. Because this method needs taps with current flow and inductance between them integrated in the module to work at all, it was a motivation to test also other measurement positions, which have not been examined yet but make the current sensing method more flexible. It was found that also in these positions current sensing is possible but only with a downstream correction of the sensed signal. These corrections are also outlined in this work. With this perceptions, an alternative current measurement approach, which takes the semiconductor module itself as a sensor, can be designed more accurately and makes it more comparable to the state-of-the-art current sensors.

 
   Rogowski-Coil-Based Current Sensor with Zero-Current Detection for Optimized Lower Cut-Off Frequency 
 By Michael LAUMEN 
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Abstract: This work combines a rogowski coil with a Zero-Current Detector (ZCD) to significantly enhance the current sensing ability of rogowski coils.The proposed method allows the design of an integrated rogowski-coil-based sensor which is able to measure alternating currents with dc offsets.Thereby, rogowski-coil-based current measurement are made applicable to a wide grade of applications, e.g., for grid-connected applications or control of electrical machines.This paper presents the design and implementation of the sensor as well as the evaluation algorithm.Measurements are shown for a prototype sensor with a design frequency range of f = 100 Hz to 40000 Hz and currents of up to I = 50 A.The measurements validate the ability of the sensor to measure alternating currents with dc offsets.

 
   Sensor Design for a Current Measurement System with High Bandwidth and High Accuracy Based on the Faraday Effect 
 By Stefan RIETMANN 
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Abstract: This paper presents the design of the optical system of a current sensor with a wide bandwidth and a high accuracy.The principle is based on the Faraday effect, which describes the effect of magnetic fields on linearly polarized light in magneto-optical material.To identify suitable materials for the optical system the main requirements and specification are determined.A theoretical description of the optical system shows a maximal applicable magnetic field frequency due to the finite velocity of light inside the material.Hence, the theoretical characterisation of the system implies practical boundaries on the optical material and its specifications.Finally, two different magneto-optical crystals, Terbium Gallium Garnet and Cadmium Manganese Telluride, are investigated, assembled and put into an optical system prototype.