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Nanoscale investigation of power semiconductor devices by scanning capacitance force microscopy
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| Author(s) |
Nobuo SATOH |
| Abstract |
The power semiconductor devices are progressing toward high-withstand voltage using wide bandgap semiconductor materials, and multi-parallel integration by microfabrication technique. We succeeded in nanoscale observation of the power semiconductor device under the bias voltage applied using by the scanning probe microscope based on combined with AFM/KFM/SCFM that achieved high spatial-resolution and high sensitivity. |
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| Filename: | 0149-epe2019-full-11172438.pdf |
| Filesize: | 3.583 MB |
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| Type |
Members Only |
| Date |
Last modified 2020-08-14 by System |
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