EPE Association: 14 - Madep - M4.1

14 - Madep - M4.1 - DEVICES MODELING 03
You are here: EPE Documents > 01 - EPE & EPE ECCE Conference Proceedings > EPE 1991 - EPE-MADEP Joint Sessions > 14 - Madep - M4.1 - DEVICES MODELING 03

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   MODELLING OF POWER DEVICES FOR CAE
By D. Schröder [View]
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Abstract: The design of power conditioning circuits especially with modern topologies is difficult. One difficulty are the parasitic elements if high switching frequencies are desired. This paper will show a general procedure for the design of these circuits with CAE-tools. These tools are special models for the power-semiconductors which are implemented in programs for electronic circuit analysis. So this CAE-tool is an intermediate tool in between the device-modelling for the semiconductor on the one hand and the system-modelling on the other hand.

   A FORWARD RECOVERY MODEL OF POWER DIODES
By Y. Jin; K. Hoffmann; W. Kiffe [View]
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Abstract: For the purpose of circuit simulations, an analytical model for the forward recovery of power diodes is developed. Semiconductor physics yields a dependent current source that describes the conductivity modulation for the mid-region of power diodes during forward recovery. The model is verified by comparing the experimental results for different current waveforms and temperatures with SABER simulations.

   REVERSE RECOVERY MODEL OF POWER DIODES
By R. Kraus; K. Hoffmann; P. Türkes [View]
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Abstract: A compact model for power diodes which describes accurately their reverse recovery has been developed. The equations for dynamic charge calculation are derived from device physics. The model is used in a circuit simulator. Thorough comparisons with measurements show, that the waveforms of current and voltage during turn off are predicted with the required accuracy. An important effect is the temperature dependence of the carrier lifetime which has been included in the model.

   A NON-QUASISTATIC FCTH-MODEL FOR CIRCUIT SIMULATION
By D. Metzner; D. Schröder; H. Gruening [View]
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Abstract: Purely based on semiconductor physics a non-quasistatic device model for network simulators is developed for a GTO-like homogeneous operating bipolar switch (hard driven Field Controlled Thyristor - FCTh). Since the basic semiconductor equations can only be solved by CPU-time-consuming 2dim. device simulations (e.g. by PISCES), this approach is not suited for simulation of topologies. But taking maximum advantage of the device understanding gained by 2dim. device simulations on the one hand (dynamics of carrier concentrations) and experimental results on the other hand, the partial differential equations can be reduced to a system of ordinary differential equations (state equations). Therefore only physical and geometric device parameters are necessary in order to adjust the model to a specific device. Excellent agreement with 2dim. simulations and experiments can be obtained.

14 - Madep - M4.1 - DEVICES MODELING 03
You are here: EPE Documents > 01 - EPE & EPE ECCE Conference Proceedings > EPE 1991 - EPE-MADEP Joint Sessions > 14 - Madep - M4.1 - DEVICES MODELING 03
	[return to parent folder]

	MODELLING OF POWER DEVICES FOR CAE By D. Schröder	[View] [Download]
Abstract: The design of power conditioning circuits especially with modern topologies is difficult. One difficulty are the parasitic elements if high switching frequencies are desired. This paper will show a general procedure for the design of these circuits with CAE-tools. These tools are special models for the power-semiconductors which are implemented in programs for electronic circuit analysis. So this CAE-tool is an intermediate tool in between the device-modelling for the semiconductor on the one hand and the system-modelling on the other hand.

	A FORWARD RECOVERY MODEL OF POWER DIODES By Y. Jin; K. Hoffmann; W. Kiffe	[View] [Download]
Abstract: For the purpose of circuit simulations, an analytical model for the forward recovery of power diodes is developed. Semiconductor physics yields a dependent current source that describes the conductivity modulation for the mid-region of power diodes during forward recovery. The model is verified by comparing the experimental results for different current waveforms and temperatures with SABER simulations.

	REVERSE RECOVERY MODEL OF POWER DIODES By R. Kraus; K. Hoffmann; P. Türkes	[View] [Download]
Abstract: A compact model for power diodes which describes accurately their reverse recovery has been developed. The equations for dynamic charge calculation are derived from device physics. The model is used in a circuit simulator. Thorough comparisons with measurements show, that the waveforms of current and voltage during turn off are predicted with the required accuracy. An important effect is the temperature dependence of the carrier lifetime which has been included in the model.

	A NON-QUASISTATIC FCTH-MODEL FOR CIRCUIT SIMULATION By D. Metzner; D. Schröder; H. Gruening	[View] [Download]
Abstract: Purely based on semiconductor physics a non-quasistatic device model for network simulators is developed for a GTO-like homogeneous operating bipolar switch (hard driven Field Controlled Thyristor - FCTh). Since the basic semiconductor equations can only be solved by CPU-time-consuming 2dim. device simulations (e.g. by PISCES), this approach is not suited for simulation of topologies. But taking maximum advantage of the device understanding gained by 2dim. device simulations on the one hand (dynamics of carrier concentrations) and experimental results on the other hand, the partial differential equations can be reduced to a system of ordinary differential equations (state equations). Therefore only physical and geometric device parameters are necessary in order to adjust the model to a specific device. Excellent agreement with 2dim. simulations and experiments can be obtained.