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A NON-QUASISTATIC FCTH-MODEL FOR CIRCUIT SIMULATION
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| Author(s) |
D. Metzner; D. Schröder; H. Gruening |
| Abstract |
Purely based on semiconductor physics a non-quasistatic device model for network simulators is developed for a GTO-like homogeneous operating bipolar switch (hard driven Field Controlled Thyristor - FCTh). Since the basic semiconductor equations can only be solved by CPU-time-consuming 2dim. device simulations (e.g. by PISCES), this approach is not suited for simulation of topologies. But taking maximum advantage of the device understanding gained by 2dim. device simulations on the one hand (dynamics of carrier concentrations) and experimental results on the other hand, the partial differential equations can be reduced to a system of ordinary differential equations (state equations). Therefore only physical and geometric device parameters are necessary in order to adjust the model to a specific device. Excellent agreement with 2dim. simulations and experiments can be obtained. |
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| Filename: | Unnamed file |
| Filesize: | 3.381 MB |
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| Type |
Members Only |
| Date |
Last modified 2019-07-17 by System |
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