EPE Association: EPE 1993 - 36 - Dialogue Session DS2.1: DEVICES: INTEGRATED AND SMART DEVICES

EPE 1993 - 36 - Dialogue Session DS2.1: DEVICES: INTEGRATED AND SMART DEVICES
You are here: EPE Documents > 01 - EPE & EPE ECCE Conference Proceedings > EPE 1993 - Conference > EPE 1993 - 36 - Dialogue Session DS2.1: DEVICES: INTEGRATED AND SMART DEVICES

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   I³M™, AN INTELLIGENT, ISOLATED, INTEGRATED HALF-BRIDGE POWER MODULE
By S. Ochi; N. Zommer [View]
[Download]

Abstract: The I³M™ an intelligent. isolated, integrated half-bridge power module designed to switch up to 200Amps at 1080V or over 200KW of peak output power is presented and described. The module effectively protects the latest generation insulated gate bipolar transistors, IGBTs, from overcurrent conditions, short circuits overtemperature conditions, and overvoltages. The module provides digital fault status as well as continuous analog outputs to the PWM systems controller for robust and tightly coupled inverter output control and protection. The addional analog outputs makes available parametric trend information to implement "Install and Forget" features. Full 2500VAC transformer isolation for both power and signal communications is presented within the module to prevent possible power system failures from propagating back to the PWM systems controller.

   ON-CHIP OVERCURRENT AND OPENLOAD DETECTION FOR A POWER MOS HIGH-SIDE SWITCH: A CMOS CURRENT MODE APPROACH
By Ph. Givelin; M. Bafleur; Th. Laopoulos; S. Siskos [View]
[Download]

Abstract: A novel accurate CMOS current sensing circuit for the protection of smart power MOS switches, using the current mode approach, is proposed. It has the advantage of not requiring any passive components and is based on a CMOS current mode building block named Current Mode Operational Amplifier (CMOA), presenting a wide frequency bandwidth as well as temperature insensitivity. Two current sensing cells are necessary to detect openload, short-circuit and overcurrent situations. Detection is achieved by monitoring a small portion of the power switch current provided by a single-cell transistor (SENSEFET). Performance analysis of these functions is made through electrical PSPICE simulations and experimental results obtained from a silicon test chip.

   A 5A 100 KHZ MONOLITHIC BIPOLAR DC/DC CONVERTER
By F. J. De Stasi; T. Szepesi [View]
[Download]

Abstract: This paper describes a new monolithic switching regulator, aimed at flyback and boost converter applications. The IC provides all the necessary circuitry to form a complete switching regulator. lt can be used in any topology requiring a 5A, 100 Khz , low-side, output switch. Current-mode control is used to provide a fast response and wide dynamic range regulator. A new adaptive blanking circuit allows the IC to ignore switch current turn-on spikes, while extending the control range of the regulator.

   MEDIUM-VOLTAGE LATERAL NMOS POWER DEVICES IN STANDARD CMOS TECHNOLOGY
By F. H. Behrens; S. Finco; M. I. Castro Simas [View]
[Download]

Abstract: Medium-voltage lateral structures for power NMOS devices, suitable for integration with standard low-voltage CMOS control circuits in Power IC's, are presented. Two device types were fabricated on 2.0 and 1.5 microns, N-well, 2 metal layer, 10-mask CMOS standard technologies. Design rules and device mask geometry were adapted for enlarging the operating voltage range till 160 volts. The LDD-NMOS transistor is based on the lightly doped drain concept. The LDSD-NMOS transistor applies the same concept for both source and drain terminals. ON-resistance as low as 9 to 11 mOhm.cm² and breakdown voltages from 20 to 160 volts were experimentally obtained. Monolithic integration of multiple switches with low-voltage control is possible, since structures are electrically compatible.

   APPLICATION EXPERIENCE WITH INTELLIGENT POWER MODULES FOR A.C. DRIVES
By E. S. Tez [View]
[Download]

Abstract: Power switching circuitry of AC motor drives, particularly of small drives below 10KW, is experiencing increasing levels of electronic integration. This trend is driven by the need for lowering manufacturing costs and achieving large scale production with automated assembly. For a 3-phase PWM inverter bridge, the state-of-art has changed from discrete devices to six-pack modules and now to Intelligent Power Modules offering various extra control and protection features. The paper reviews the recent progress in the electronically integrated power modules for variable-speed AC drives. Various aspects such as electronic construction, packaging, base/gate drive circuitry, protection and fault identification are discussed from the view-point of the user rather than the manufacturer of power modules. Application experience gained from using such modules in vector-controlled (field-oriented) induction motor drives is presented.

EPE 1993 - 36 - Dialogue Session DS2.1: DEVICES: INTEGRATED AND SMART DEVICES
You are here: EPE Documents > 01 - EPE & EPE ECCE Conference Proceedings > EPE 1993 - Conference > EPE 1993 - 36 - Dialogue Session DS2.1: DEVICES: INTEGRATED AND SMART DEVICES
	[return to parent folder]

	I³M™, AN INTELLIGENT, ISOLATED, INTEGRATED HALF-BRIDGE POWER MODULE By S. Ochi; N. Zommer	[View] [Download]
Abstract: The I³M™ an intelligent. isolated, integrated half-bridge power module designed to switch up to 200Amps at 1080V or over 200KW of peak output power is presented and described. The module effectively protects the latest generation insulated gate bipolar transistors, IGBTs, from overcurrent conditions, short circuits overtemperature conditions, and overvoltages. The module provides digital fault status as well as continuous analog outputs to the PWM systems controller for robust and tightly coupled inverter output control and protection. The addional analog outputs makes available parametric trend information to implement "Install and Forget" features. Full 2500VAC transformer isolation for both power and signal communications is presented within the module to prevent possible power system failures from propagating back to the PWM systems controller.

	ON-CHIP OVERCURRENT AND OPENLOAD DETECTION FOR A POWER MOS HIGH-SIDE SWITCH: A CMOS CURRENT MODE APPROACH By Ph. Givelin; M. Bafleur; Th. Laopoulos; S. Siskos	[View] [Download]
Abstract: A novel accurate CMOS current sensing circuit for the protection of smart power MOS switches, using the current mode approach, is proposed. It has the advantage of not requiring any passive components and is based on a CMOS current mode building block named Current Mode Operational Amplifier (CMOA), presenting a wide frequency bandwidth as well as temperature insensitivity. Two current sensing cells are necessary to detect openload, short-circuit and overcurrent situations. Detection is achieved by monitoring a small portion of the power switch current provided by a single-cell transistor (SENSEFET). Performance analysis of these functions is made through electrical PSPICE simulations and experimental results obtained from a silicon test chip.

	A 5A 100 KHZ MONOLITHIC BIPOLAR DC/DC CONVERTER By F. J. De Stasi; T. Szepesi	[View] [Download]
Abstract: This paper describes a new monolithic switching regulator, aimed at flyback and boost converter applications. The IC provides all the necessary circuitry to form a complete switching regulator. lt can be used in any topology requiring a 5A, 100 Khz , low-side, output switch. Current-mode control is used to provide a fast response and wide dynamic range regulator. A new adaptive blanking circuit allows the IC to ignore switch current turn-on spikes, while extending the control range of the regulator.

	MEDIUM-VOLTAGE LATERAL NMOS POWER DEVICES IN STANDARD CMOS TECHNOLOGY By F. H. Behrens; S. Finco; M. I. Castro Simas	[View] [Download]
Abstract: Medium-voltage lateral structures for power NMOS devices, suitable for integration with standard low-voltage CMOS control circuits in Power IC's, are presented. Two device types were fabricated on 2.0 and 1.5 microns, N-well, 2 metal layer, 10-mask CMOS standard technologies. Design rules and device mask geometry were adapted for enlarging the operating voltage range till 160 volts. The LDD-NMOS transistor is based on the lightly doped drain concept. The LDSD-NMOS transistor applies the same concept for both source and drain terminals. ON-resistance as low as 9 to 11 mOhm.cm² and breakdown voltages from 20 to 160 volts were experimentally obtained. Monolithic integration of multiple switches with low-voltage control is possible, since structures are electrically compatible.

	APPLICATION EXPERIENCE WITH INTELLIGENT POWER MODULES FOR A.C. DRIVES By E. S. Tez	[View] [Download]
Abstract: Power switching circuitry of AC motor drives, particularly of small drives below 10KW, is experiencing increasing levels of electronic integration. This trend is driven by the need for lowering manufacturing costs and achieving large scale production with automated assembly. For a 3-phase PWM inverter bridge, the state-of-art has changed from discrete devices to six-pack modules and now to Intelligent Power Modules offering various extra control and protection features. The paper reviews the recent progress in the electronically integrated power modules for variable-speed AC drives. Various aspects such as electronic construction, packaging, base/gate drive circuitry, protection and fault identification are discussed from the view-point of the user rather than the manufacturer of power modules. Application experience gained from using such modules in vector-controlled (field-oriented) induction motor drives is presented.