EPE Association: EPE 2018 - LS5c: Wide Band Gap Power Electronics

EPE 2018 - LS5c: Wide Band Gap Power Electronics
You are here: EPE Documents > 01 - EPE & EPE ECCE Conference Proceedings > EPE 2018 ECCE Europe - Conference > EPE 2018 - Topic 02: Power Converter Topologies and Design > EPE 2018 - LS5c: Wide Band Gap Power Electronics

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   A cost-controlled, highly efficient SiC-based Current Source Inverter dedicated to Photovoltaic applications
By Guillaume LEFEVRE [View]
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Abstract: PV inverters, irrespective of the rated power, have currently very high efficiency. For residential orBIPV applications, cost remains a key point for competitiveness. This paper presents a cost-optimizedCSI converter for a 5kW solar inverter. A method based on manufacturers' datasheets is described tooptimize the choice of Silicon Carbide devices and associated cooling device with respect to theswitching frequency, resulting in optimal cost/performance designs. Experimental results obtained witha prototype designed according to the proposed methodology complements this study.

   Design of a 300 kW Compact and Efficient Fast Charger Station Utilizing High-Power SiC Modules and Nanocrystalline Magnetic Materials
By Saeid HAGHBIN [View]
[Download]

Abstract: Fast charger stations are important devices for more market penetration of grid-connected vehicles. The general trends for these stations are towards higher powers. A compact 300 kW fast charger station is designed and some parts of the system are implemented. Three modules with 100 kW power levels are connected in parallel by input/output interleaving to reach this power level. Silicon carbide (SiC) power modules and nanocrystalline magnetic materials are utilized in the converter to enhance the system performance, power density and efficiency. The selected topology, design, simulation and some measurement results are presented in this paper.

   Extended T-type (eT) Inverter Based on SiC Power Devices
By Jacek RABKOWSKI [View]
[Download]

Abstract: The paper presents simulation and experimental study focused on a modified topology of the power converter - an extended T-type (eT) inverter designed and built with SiC power devices. It consist the standard three phase T-type topology with additional dc/dc converter connected across the DC side capacitors. The eT inverter shows high voltage gain and, in consequence, may be applied as an interface between three-phase grid and low voltage sources (i.e PV panels). Moreover, the dc/dc converter is capable to influence neutral point potential and necessary capacitance of the DC side capacitors is lower. Basic operation principles are explained and simulations on the 6 kVA laboratory model are shown. eT inverter is supplying resistive load with 3x400 V RMS output voltage from 250 V DC source. Finally, a series of experiments of a laboratory model designed with SiC MOSFETs and Schottky diodes is also presented.

   High Ratio Bidirectional Hybrid Switched Inductor Converter using Wide Bandgap Transistors
By Dan-Cornel HULEA [View]
[Download]

Abstract: This paper presents a bidirectional converter (BHSI) with a hybrid structure based on a switched inductive cell which helps to achieve a higher conversion ratio. The switched inductive cell has two inductors which are connected in series and in parallel so that an additional current doubling/division is obtained. Bidirectional high ratio converters are useful in supercapacitor (SC) storage applications where the voltage of the SC has a large variation. Mathematical analysis is provided, and performances are compared to other converter topologies. Two experimental prototypes are constructed using Si-MOSFETs and GaN-FETs, and simulation and experimental results are provided in order to show the performances in terms of efficiency and stability of charge/discharge transition.

EPE 2018 - LS5c: Wide Band Gap Power Electronics
You are here: EPE Documents > 01 - EPE & EPE ECCE Conference Proceedings > EPE 2018 ECCE Europe - Conference > EPE 2018 - Topic 02: Power Converter Topologies and Design > EPE 2018 - LS5c: Wide Band Gap Power Electronics
	[return to parent folder]

	A cost-controlled, highly efficient SiC-based Current Source Inverter dedicated to Photovoltaic applications By Guillaume LEFEVRE	[View] [Download]
Abstract: PV inverters, irrespective of the rated power, have currently very high efficiency. For residential orBIPV applications, cost remains a key point for competitiveness. This paper presents a cost-optimizedCSI converter for a 5kW solar inverter. A method based on manufacturers' datasheets is described tooptimize the choice of Silicon Carbide devices and associated cooling device with respect to theswitching frequency, resulting in optimal cost/performance designs. Experimental results obtained witha prototype designed according to the proposed methodology complements this study.

	Design of a 300 kW Compact and Efficient Fast Charger Station Utilizing High-Power SiC Modules and Nanocrystalline Magnetic Materials By Saeid HAGHBIN	[View] [Download]
Abstract: Fast charger stations are important devices for more market penetration of grid-connected vehicles. The general trends for these stations are towards higher powers. A compact 300 kW fast charger station is designed and some parts of the system are implemented. Three modules with 100 kW power levels are connected in parallel by input/output interleaving to reach this power level. Silicon carbide (SiC) power modules and nanocrystalline magnetic materials are utilized in the converter to enhance the system performance, power density and efficiency. The selected topology, design, simulation and some measurement results are presented in this paper.

	Extended T-type (eT) Inverter Based on SiC Power Devices By Jacek RABKOWSKI	[View] [Download]
Abstract: The paper presents simulation and experimental study focused on a modified topology of the power converter - an extended T-type (eT) inverter designed and built with SiC power devices. It consist the standard three phase T-type topology with additional dc/dc converter connected across the DC side capacitors. The eT inverter shows high voltage gain and, in consequence, may be applied as an interface between three-phase grid and low voltage sources (i.e PV panels). Moreover, the dc/dc converter is capable to influence neutral point potential and necessary capacitance of the DC side capacitors is lower. Basic operation principles are explained and simulations on the 6 kVA laboratory model are shown. eT inverter is supplying resistive load with 3x400 V RMS output voltage from 250 V DC source. Finally, a series of experiments of a laboratory model designed with SiC MOSFETs and Schottky diodes is also presented.

	High Ratio Bidirectional Hybrid Switched Inductor Converter using Wide Bandgap Transistors By Dan-Cornel HULEA	[View] [Download]
Abstract: This paper presents a bidirectional converter (BHSI) with a hybrid structure based on a switched inductive cell which helps to achieve a higher conversion ratio. The switched inductive cell has two inductors which are connected in series and in parallel so that an additional current doubling/division is obtained. Bidirectional high ratio converters are useful in supercapacitor (SC) storage applications where the voltage of the SC has a large variation. Mathematical analysis is provided, and performances are compared to other converter topologies. Two experimental prototypes are constructed using Si-MOSFETs and GaN-FETs, and simulation and experimental results are provided in order to show the performances in terms of efficiency and stability of charge/discharge transition.