EPE Association: EPE 2016 - LS2c: Wide Band Gap Components

EPE 2016 - LS2c: Wide Band Gap Components
You are here: EPE Documents > 01 - EPE & EPE ECCE Conference Proceedings > EPE 2016 ECCE Europe - Conference > EPE 2016 - Topic 01: Devices, Packaging and System Integration > EPE 2016 - LS2c: Wide Band Gap Components

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   High Voltage GaN-Based Schottky Diodes in Non-Isolated LED Buck Converters
By Andreas ZIBOLD [View]
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Abstract: This work demonstrates the suitability of AlGaN/GaN-on-Si Schottky diodes in a non-isolated buckconverter for LED applications. To the authors' knowledge, this is the first time that AlGaN/GaN-on-Si Schottky diodes have been employed as flyback diodes in a non-isolated buck converter. First thediodes are specifically developed and characterized. Afterwards the diodes are tested in an advancednon-isolated buck converter for LED modules. The circuit is characterized and the approach isdiscussed and compared to state-of-the-art solutions.

   Implementation and Investigation of the Dynamic Active Clamping for Silicon Carbide MOSFETs
By Christian BOEDEKER [View]
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Abstract: Silicon carbide (SiC) devices are known for their fast switching transients. The combination of strayinductances in the load circuit and high di/dt values can lead to very high transient overvoltages.Therefore, the reduction of the stray inductance is one of the most important steps to utilise the fullpotential of SiC devices. However, in some applications the stray inductance cannot be reduced furtherand high overvoltages are unavoidable. Since protective circuitries like the Dynamic Voltage RiseControl (DVRC) and the 'classical' Active Clamping (AC) do not sufficiently work for discrete SiCtransistors, the interaction of a SiC MOSFET and the more promising Dynamic Active Clamping (DAC)is investigated to reduce overvoltages. As a consequence of parasitic elements, which affect theswitching process, an improved version of the DAC is proposed. Beside the comparison of switchingenergies and overvoltages, the dependence on the MOSFET junction temperature is analysed to get abetter understanding, how different operation conditions influence the efficiency of the DAC.

   Investigation of the Surge Current Capability of the Body Diode of SiC MOSFETs for HVDC Applications
By Diane-Perle SADIK [View]
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Abstract: The surge current capability of the body-diode of SiC MOSFETs is experimentally analyzed in order to investigate the possibility of using SiC MOSFETs for HVDC applications. SiC MOSFET discrete devices and modules have been tested with surge currents up to 10 times the rated current and for durations up to 2 ms. Although the presence of stacking faults cannot be excluded, the experiments reveal that the failure may occur due to the latch-up of the parasitic n-p-n transistor located in the SiC MOSFET.

   Investigation on Diode Surge Forward Current Ruggedness of Si and SiC Power Modules
By Fabio CARASTRO [View]
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Abstract: This paper investigates the behavior of selected Si and SiC (BD-MOS & SBD) FWD power modules during a Surge event conditions - which occur in high power converters - used for Motor Drives and grid connected power inverters. The approach used can be particularly relevant to validate the ruggedness of emerging SiC components in high power conversion systems, which is mainly triggered in order to achieve higher power densities and higher switching frequencies while retaining similar levels of Si device reliability.Experimental data and transient thermal behavior are here combined to understand the driven destruction mechanism.

EPE 2016 - LS2c: Wide Band Gap Components
You are here: EPE Documents > 01 - EPE & EPE ECCE Conference Proceedings > EPE 2016 ECCE Europe - Conference > EPE 2016 - Topic 01: Devices, Packaging and System Integration > EPE 2016 - LS2c: Wide Band Gap Components
	[return to parent folder]

	High Voltage GaN-Based Schottky Diodes in Non-Isolated LED Buck Converters By Andreas ZIBOLD	[View] [Download]
Abstract: This work demonstrates the suitability of AlGaN/GaN-on-Si Schottky diodes in a non-isolated buckconverter for LED applications. To the authors' knowledge, this is the first time that AlGaN/GaN-on-Si Schottky diodes have been employed as flyback diodes in a non-isolated buck converter. First thediodes are specifically developed and characterized. Afterwards the diodes are tested in an advancednon-isolated buck converter for LED modules. The circuit is characterized and the approach isdiscussed and compared to state-of-the-art solutions.

	Implementation and Investigation of the Dynamic Active Clamping for Silicon Carbide MOSFETs By Christian BOEDEKER	[View] [Download]
Abstract: Silicon carbide (SiC) devices are known for their fast switching transients. The combination of strayinductances in the load circuit and high di/dt values can lead to very high transient overvoltages.Therefore, the reduction of the stray inductance is one of the most important steps to utilise the fullpotential of SiC devices. However, in some applications the stray inductance cannot be reduced furtherand high overvoltages are unavoidable. Since protective circuitries like the Dynamic Voltage RiseControl (DVRC) and the 'classical' Active Clamping (AC) do not sufficiently work for discrete SiCtransistors, the interaction of a SiC MOSFET and the more promising Dynamic Active Clamping (DAC)is investigated to reduce overvoltages. As a consequence of parasitic elements, which affect theswitching process, an improved version of the DAC is proposed. Beside the comparison of switchingenergies and overvoltages, the dependence on the MOSFET junction temperature is analysed to get abetter understanding, how different operation conditions influence the efficiency of the DAC.

	Investigation of the Surge Current Capability of the Body Diode of SiC MOSFETs for HVDC Applications By Diane-Perle SADIK	[View] [Download]
Abstract: The surge current capability of the body-diode of SiC MOSFETs is experimentally analyzed in order to investigate the possibility of using SiC MOSFETs for HVDC applications. SiC MOSFET discrete devices and modules have been tested with surge currents up to 10 times the rated current and for durations up to 2 ms. Although the presence of stacking faults cannot be excluded, the experiments reveal that the failure may occur due to the latch-up of the parasitic n-p-n transistor located in the SiC MOSFET.

	Investigation on Diode Surge Forward Current Ruggedness of Si and SiC Power Modules By Fabio CARASTRO	[View] [Download]
Abstract: This paper investigates the behavior of selected Si and SiC (BD-MOS & SBD) FWD power modules during a Surge event conditions - which occur in high power converters - used for Motor Drives and grid connected power inverters. The approach used can be particularly relevant to validate the ruggedness of emerging SiC components in high power conversion systems, which is mainly triggered in order to achieve higher power densities and higher switching frequencies while retaining similar levels of Si device reliability.Experimental data and transient thermal behavior are here combined to understand the driven destruction mechanism.