| Abstract |
Silicon carbide (SiC) devices are known for their fast switching transients. The combination of strayinductances in the load circuit and high di/dt values can lead to very high transient overvoltages.Therefore, the reduction of the stray inductance is one of the most important steps to utilise the fullpotential of SiC devices. However, in some applications the stray inductance cannot be reduced furtherand high overvoltages are unavoidable. Since protective circuitries like the Dynamic Voltage RiseControl (DVRC) and the 'classical' Active Clamping (AC) do not sufficiently work for discrete SiCtransistors, the interaction of a SiC MOSFET and the more promising Dynamic Active Clamping (DAC)is investigated to reduce overvoltages. As a consequence of parasitic elements, which affect theswitching process, an improved version of the DAC is proposed. Beside the comparison of switchingenergies and overvoltages, the dependence on the MOSFET junction temperature is analysed to get abetter understanding, how different operation conditions influence the efficiency of the DAC. |
