EPE Association: EPE 2015 - LS3a: Hard and Soft Switching Techniques

EPE 2015 - LS3a: Hard and Soft Switching Techniques
You are here: EPE Documents > 01 - EPE & EPE ECCE Conference Proceedings > EPE 2015 ECCE Europe - Conference > EPE 2015 - Topic 02: Power Converter Topologies and Design > EPE 2015 - LS3a: Hard and Soft Switching Techniques

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   A Four-level pi-type Converter for Low-voltage Applications
By XIBO YUAN [View]
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Abstract: This paper has introduced a four-level p-type converter for low-voltage applications which has a simple structure with six switches per phase leg. The line output voltage has seven levels and the output harmonics is much lower than the conventional two-level converter. The switching states and their associated output voltage levels have been analyzed. A simple carrier-based modulation method with zero-sequence signal injection has been devised to modulate the converter and regulate dc-link neutral points' voltages. The two neutral points' voltages can be well controlled with a back to back configuration even under high modulation index and high power factor. Simulation and experimental results have validated the topology, modulation and control strategy for the four-level p-type converter.

   A Generalized Multilevel Inverter Topology with Stacked Coupled Inductors
By Dan FLORICAU [View]
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Abstract: In this paper a generalized multilevel inverter topology with stacked-coupled-inductors (SCI) is proposed. It is based on two cascaded stages controlled at different switching frequencies and two stacked groups of coupled-inductors. The high-frequency stage is specific to a parallel connection of at least two groups of stacked switching cells, while the low-frequency stage is composed by a basic switching cell. The operation principle of the proposed SCI generalization is verified by numerical simulations both for single- and three-phase VSI topologies.

   Non-isolated DC-DC Converter for High-Step-up Ratio Applications
By Musbahu MUHAMMAD [View]
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Abstract: This paper presents a new Zero Voltage Switching (ZVS), non-isolated, boost converter for high voltage gain (greater than 10x) applications. A coupled inductor and two capacitors are used to enlarge the voltage gain of the power converter, without the need for extreme PWM duty ratios. Compared to similar power converter topologies presented in the literature, an important advantage of the proposed power electronic converter is the reduced voltage stress on the semiconductor devices. In this paper, the principle of operation of the circuit is described in full detail. Furthermore, experimental results, based on a 250W prototype power converter, are presented to validate the performance of the system. The proposed dc-dc power converter is particularly well suited to electrical vehicle and renewable energy applications, which typically have low input voltage and high output voltage requirements.

   SiC and GaN Based BSNPC Inverter for Photovoltaic Systems
By Emre GURPINAR [View]
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Abstract: Recent studies show that Silicon Carbide and Gallium Nitride based power semiconductors promisebetter performance over conventional Silicon based devices. In this study, performance analysis of athree level inverter based on SiC and GaN is discussed for photovoltaic applications. The convertercan achieve 99.2\% efficiency at 16kHz switching frequency and 1.4kW output power, and operatewith high efficiency up to 160kHz. Switching performance comparison of 1200V SiC MOSFET and600V GaN GIT shows that series connected GaN GITs for 1200V blocking voltage can be a goodalternative to 1200V SiC MOSFET that has high turn-on current due to device output and reversecapacitance. The impact of high performance of SiC and GaN devices on output filter size andcooling requirements is discussed. The study shows that with wide-bandgap devices, heat sink volumecan be reduced by 74\% and output filter size can be reduced by 57\%.

EPE 2015 - LS3a: Hard and Soft Switching Techniques
You are here: EPE Documents > 01 - EPE & EPE ECCE Conference Proceedings > EPE 2015 ECCE Europe - Conference > EPE 2015 - Topic 02: Power Converter Topologies and Design > EPE 2015 - LS3a: Hard and Soft Switching Techniques
	[return to parent folder]

	A Four-level pi-type Converter for Low-voltage Applications By XIBO YUAN	[View] [Download]
Abstract: This paper has introduced a four-level p-type converter for low-voltage applications which has a simple structure with six switches per phase leg. The line output voltage has seven levels and the output harmonics is much lower than the conventional two-level converter. The switching states and their associated output voltage levels have been analyzed. A simple carrier-based modulation method with zero-sequence signal injection has been devised to modulate the converter and regulate dc-link neutral points' voltages. The two neutral points' voltages can be well controlled with a back to back configuration even under high modulation index and high power factor. Simulation and experimental results have validated the topology, modulation and control strategy for the four-level p-type converter.

	A Generalized Multilevel Inverter Topology with Stacked Coupled Inductors By Dan FLORICAU	[View] [Download]
Abstract: In this paper a generalized multilevel inverter topology with stacked-coupled-inductors (SCI) is proposed. It is based on two cascaded stages controlled at different switching frequencies and two stacked groups of coupled-inductors. The high-frequency stage is specific to a parallel connection of at least two groups of stacked switching cells, while the low-frequency stage is composed by a basic switching cell. The operation principle of the proposed SCI generalization is verified by numerical simulations both for single- and three-phase VSI topologies.

	Non-isolated DC-DC Converter for High-Step-up Ratio Applications By Musbahu MUHAMMAD	[View] [Download]
Abstract: This paper presents a new Zero Voltage Switching (ZVS), non-isolated, boost converter for high voltage gain (greater than 10x) applications. A coupled inductor and two capacitors are used to enlarge the voltage gain of the power converter, without the need for extreme PWM duty ratios. Compared to similar power converter topologies presented in the literature, an important advantage of the proposed power electronic converter is the reduced voltage stress on the semiconductor devices. In this paper, the principle of operation of the circuit is described in full detail. Furthermore, experimental results, based on a 250W prototype power converter, are presented to validate the performance of the system. The proposed dc-dc power converter is particularly well suited to electrical vehicle and renewable energy applications, which typically have low input voltage and high output voltage requirements.

	SiC and GaN Based BSNPC Inverter for Photovoltaic Systems By Emre GURPINAR	[View] [Download]
Abstract: Recent studies show that Silicon Carbide and Gallium Nitride based power semiconductors promisebetter performance over conventional Silicon based devices. In this study, performance analysis of athree level inverter based on SiC and GaN is discussed for photovoltaic applications. The convertercan achieve 99.2\% efficiency at 16kHz switching frequency and 1.4kW output power, and operatewith high efficiency up to 160kHz. Switching performance comparison of 1200V SiC MOSFET and600V GaN GIT shows that series connected GaN GITs for 1200V blocking voltage can be a goodalternative to 1200V SiC MOSFET that has high turn-on current due to device output and reversecapacitance. The impact of high performance of SiC and GaN devices on output filter size andcooling requirements is discussed. The study shows that with wide-bandgap devices, heat sink volumecan be reduced by 74\% and output filter size can be reduced by 57\%.