| Abstract |
Recent studies show that Silicon Carbide and Gallium Nitride based power semiconductors promisebetter performance over conventional Silicon based devices. In this study, performance analysis of athree level inverter based on SiC and GaN is discussed for photovoltaic applications. The convertercan achieve 99.2\% efficiency at 16kHz switching frequency and 1.4kW output power, and operatewith high efficiency up to 160kHz. Switching performance comparison of 1200V SiC MOSFET and600V GaN GIT shows that series connected GaN GITs for 1200V blocking voltage can be a goodalternative to 1200V SiC MOSFET that has high turn-on current due to device output and reversecapacitance. The impact of high performance of SiC and GaN devices on output filter size andcooling requirements is discussed. The study shows that with wide-bandgap devices, heat sink volumecan be reduced by 74\% and output filter size can be reduced by 57\%. |
