EPE Association: EPE 1997 – 13: Lecture Session L4a: MONOLITHIC POWER INTEGRATION

EPE 1997 – 13: Lecture Session L4a: MONOLITHIC POWER INTEGRATION
You are here: EPE Documents > 01 - EPE & EPE ECCE Conference Proceedings > EPE 1997 - Conference > EPE 1997 – 13: Lecture Session L4a: MONOLITHIC POWER INTEGRATION

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   A NEW IGBT WITH A MONOLITHIC SELF PROTECTION CIRCUITS
By P. A. Aloïsi; Z. J. Shen; S. P. Robb [View]
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Abstract: Theses devices operate under normal operating conditions just like a conventional IGBT but turns off automatically under abnormal operating conditions of over-current (or short circuit) and/or over-temperature to protect itself. The typically observed characteristics of the 600V intelligent IGBT include a forward voltage of 1.4 V at a current density of 100A/cm2, a turn-off fall time of 200 nanosenconds, and a short-circuit withstand time at 125°C of more than 50 microseconds.

   A METHODOLOGY FOR THE FUNCTIONAL POWER INTEGRATION
By R. Pezzani; E. Bernier; C. Ballon [View]
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Abstract: The purpose of this paper is to illustrate by an example the approach of the power integration into the Silicon based on the System understanding. This approach called ASD (Application Specific Discretes) enables to integrate devices such as thyristors, diodes, transistors, etc ... The proposed concept, well adapted to bidirectional behavior and high current density allows the conception of new generations of power devices.

   TRENDS IN DESIGN AND TECHNOLOGY FOR NEW POWER INTEGRATED DEVICES BASED ON FUNCTIONAL INTEGRATION
By J-L. Sanchez; P. Austin; R. Berriane; M. Marmouget [View]
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Abstract: In this paper, we present improvements to the design and technology for the development of new power integrated devices not currently achievable with the "smart-power" technology. This kind of integration ideally suits the capabilities of functional integration. Design strategies resulting from the association of MOS and thyristors elements are discussed. An integrated power devices based on this concept is presented. Finally, trends in design and technology linked to the functional integration mode will be defined.

   A CMOS Compatible Smart Power Process with Complete Dielectric Isolation
By J. Weyers; W. Rost; E. Musch; H. Vogtl; J. Millan; S. Hidalgo; J. Reboflo; J. Fernandez [View]
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Abstract: This paper describes a new CMOS compatible SIMOX process for fabrication of area efficient 50V Smart Power Full-Bridges with complete dielectric isolation. The main application is the production of 'intelligent' switches and Full-Bridge drivers with enhanced robustness and noise immunity for the increasing challenges of the automotive electronic market.

EPE 1997 – 13: Lecture Session L4a: MONOLITHIC POWER INTEGRATION
You are here: EPE Documents > 01 - EPE & EPE ECCE Conference Proceedings > EPE 1997 - Conference > EPE 1997 – 13: Lecture Session L4a: MONOLITHIC POWER INTEGRATION
	[return to parent folder]

	A NEW IGBT WITH A MONOLITHIC SELF PROTECTION CIRCUITS By P. A. Aloïsi; Z. J. Shen; S. P. Robb	[View] [Download]
Abstract: Theses devices operate under normal operating conditions just like a conventional IGBT but turns off automatically under abnormal operating conditions of over-current (or short circuit) and/or over-temperature to protect itself. The typically observed characteristics of the 600V intelligent IGBT include a forward voltage of 1.4 V at a current density of 100A/cm2, a turn-off fall time of 200 nanosenconds, and a short-circuit withstand time at 125°C of more than 50 microseconds.

	A METHODOLOGY FOR THE FUNCTIONAL POWER INTEGRATION By R. Pezzani; E. Bernier; C. Ballon	[View] [Download]
Abstract: The purpose of this paper is to illustrate by an example the approach of the power integration into the Silicon based on the System understanding. This approach called ASD (Application Specific Discretes) enables to integrate devices such as thyristors, diodes, transistors, etc ... The proposed concept, well adapted to bidirectional behavior and high current density allows the conception of new generations of power devices.

	TRENDS IN DESIGN AND TECHNOLOGY FOR NEW POWER INTEGRATED DEVICES BASED ON FUNCTIONAL INTEGRATION By J-L. Sanchez; P. Austin; R. Berriane; M. Marmouget	[View] [Download]
Abstract: In this paper, we present improvements to the design and technology for the development of new power integrated devices not currently achievable with the "smart-power" technology. This kind of integration ideally suits the capabilities of functional integration. Design strategies resulting from the association of MOS and thyristors elements are discussed. An integrated power devices based on this concept is presented. Finally, trends in design and technology linked to the functional integration mode will be defined.

	A CMOS Compatible Smart Power Process with Complete Dielectric Isolation By J. Weyers; W. Rost; E. Musch; H. Vogtl; J. Millan; S. Hidalgo; J. Reboflo; J. Fernandez	[View] [Download]
Abstract: This paper describes a new CMOS compatible SIMOX process for fabrication of area efficient 50V Smart Power Full-Bridges with complete dielectric isolation. The main application is the production of 'intelligent' switches and Full-Bridge drivers with enhanced robustness and noise immunity for the increasing challenges of the automotive electronic market.