EPE Association: EPE 1997 – 05: Lecture Session L2a: SPECIAL SESSION IGBT/GTO

EPE 1997 – 05: Lecture Session L2a: SPECIAL SESSION IGBT/GTO
You are here: EPE Documents > 01 - EPE & EPE ECCE Conference Proceedings > EPE 1997 - Conference > EPE 1997 – 05: Lecture Session L2a: SPECIAL SESSION IGBT/GTO

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   INTEGRATED POWER MODULE IN IGBT TECHNOLOGY FOR MODULAR POWER TRACTION CONVERTERS
By G. Hilpert; T. Züllig [View]
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Abstract: Co-operation between semiconductor and converter manufacturers has made it possible to develop an integrated power module (IPM) which is perfectly adapted to traction applicatiOns. Using tl1e IPM, it is possible to reduce tile volume, weight and power loss of traction converters when compared to existing GTO technology.

   MUL TICHIP HIGH POWER IGBT-MODULES FOR TRACTION AND INDUSTRIAL APPLICATION
By K. H. Sommer; J. Gottert; G. Lefranc; R. Spanke [View]
[Download]

Abstract: In large volume manufacturing of IGBT-high power modules the necessary numbers of 50 A, 75 A, and 100 A IGBT-chips are mounted in parallel. The technical prerequisites for the production of reliable devices are discussed. On one hand the chip concept, especially the positive temperature coefficient of V CEsat• and narrow distribution of chip parameters within chip lots and on the other hand symmetrical layout of the module with very low internal parasitic inductances are decisive factors. Development work on internal insulation brought the result that the requirements for railway applications according to IEC 1287 concerning dielectric test and partial discharge are fulfilled. Based on improvements of the Al-thick wire bonding technology a report about new extended power cycling tests is given. Metallographic analysis shows that bond wire lift-offs have disappeared and therefore are no longer the limiting factor in reliability of IGBT-modules. lt is possible to guarantee that the devices will stand 10 million short term cycles with a temperature swing of delta Ti = 40 °C.

   A NEW RANGE OF REVERSE CONDUCTING GATE-COMMUTATED THYRISTORS FOR HIGH-VOLTAGE, MEDIUM POWER APPLICATIONS
By S. Linder; S. Klaka; M. Frecker; E. Carroll; H. Zeller [View]
[Download]

Abstract: Until recently, the Gate Commutated Thyristor (GCT) was regarded as the ideal device for very high power applications, allowing 3/6 kA devices (with/without snubber) to be produced from 4" silicon wafers, with voltage ratings of up to 6 kV. Lower currents, it was felt, were best handled by convenient modular IGBT devices. However, the thrust for reliable and efficient drives operating at de link voltages of 2 to 10 kV, albeit at currents of only a few hundred amps, have led to the development of a complete range of reverse conducting snubberless GCTs from 200 A to 3000 A with 4.5 and 5.5 kV ratings. The ratings and characteristics of this new product range are presented.

EPE 1997 – 05: Lecture Session L2a: SPECIAL SESSION IGBT/GTO
You are here: EPE Documents > 01 - EPE & EPE ECCE Conference Proceedings > EPE 1997 - Conference > EPE 1997 – 05: Lecture Session L2a: SPECIAL SESSION IGBT/GTO
	[return to parent folder]

	INTEGRATED POWER MODULE IN IGBT TECHNOLOGY FOR MODULAR POWER TRACTION CONVERTERS By G. Hilpert; T. Züllig	[View] [Download]
Abstract: Co-operation between semiconductor and converter manufacturers has made it possible to develop an integrated power module (IPM) which is perfectly adapted to traction applicatiOns. Using tl1e IPM, it is possible to reduce tile volume, weight and power loss of traction converters when compared to existing GTO technology.

	MUL TICHIP HIGH POWER IGBT-MODULES FOR TRACTION AND INDUSTRIAL APPLICATION By K. H. Sommer; J. Gottert; G. Lefranc; R. Spanke	[View] [Download]
Abstract: In large volume manufacturing of IGBT-high power modules the necessary numbers of 50 A, 75 A, and 100 A IGBT-chips are mounted in parallel. The technical prerequisites for the production of reliable devices are discussed. On one hand the chip concept, especially the positive temperature coefficient of V CEsat• and narrow distribution of chip parameters within chip lots and on the other hand symmetrical layout of the module with very low internal parasitic inductances are decisive factors. Development work on internal insulation brought the result that the requirements for railway applications according to IEC 1287 concerning dielectric test and partial discharge are fulfilled. Based on improvements of the Al-thick wire bonding technology a report about new extended power cycling tests is given. Metallographic analysis shows that bond wire lift-offs have disappeared and therefore are no longer the limiting factor in reliability of IGBT-modules. lt is possible to guarantee that the devices will stand 10 million short term cycles with a temperature swing of delta Ti = 40 °C.

	A NEW RANGE OF REVERSE CONDUCTING GATE-COMMUTATED THYRISTORS FOR HIGH-VOLTAGE, MEDIUM POWER APPLICATIONS By S. Linder; S. Klaka; M. Frecker; E. Carroll; H. Zeller	[View] [Download]
Abstract: Until recently, the Gate Commutated Thyristor (GCT) was regarded as the ideal device for very high power applications, allowing 3/6 kA devices (with/without snubber) to be produced from 4" silicon wafers, with voltage ratings of up to 6 kV. Lower currents, it was felt, were best handled by convenient modular IGBT devices. However, the thrust for reliable and efficient drives operating at de link voltages of 2 to 10 kV, albeit at currents of only a few hundred amps, have led to the development of a complete range of reverse conducting snubberless GCTs from 200 A to 3000 A with 4.5 and 5.5 kV ratings. The ratings and characteristics of this new product range are presented.