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MUL TICHIP HIGH POWER IGBT-MODULES FOR TRACTION AND INDUSTRIAL APPLICATION
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| Author(s) |
K. H. Sommer; J. Gottert; G. Lefranc; R. Spanke |
| Abstract |
In large volume manufacturing of IGBT-high power modules the necessary numbers of 50 A, 75 A, and 100 A IGBT-chips are mounted in parallel. The technical prerequisites for the production of reliable devices are discussed. On one hand the chip concept, especially the positive temperature coefficient of V CEsat• and narrow distribution of chip parameters within chip lots and on the other hand symmetrical layout of the module with very low internal parasitic inductances are decisive factors. Development work on internal insulation brought the result that the requirements for railway applications according to IEC 1287 concerning dielectric test and
partial discharge are fulfilled.
Based on improvements of the Al-thick wire bonding technology a report about new extended power cycling tests is given. Metallographic analysis shows that bond wire lift-offs have disappeared and therefore are no longer the limiting factor in reliability of IGBT-modules. lt is possible to guarantee that the devices will stand 10 million short term cycles with a temperature swing of delta Ti = 40 °C. |
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| Filesize: | 577 KB |
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| Type |
Members Only |
| Date |
Last modified 2016-01-11 by System |
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