EPE Association: EPE 2014 - DS3b: Reliability

EPE 2014 - DS3b: Reliability
You are here: EPE Documents > 01 - EPE & EPE ECCE Conference Proceedings > EPE 2014 ECCE Europe - Conference > EPE 2014 - Topic 01: Devices, Packaging and System Integration > EPE 2014 - DS3b: Reliability

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   Failure Characteristics of Discrete Power Semiconductor Packages Exceeding Electrical Specifications
By Michael GLEISSNER, Mark BAKRAN [View]
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Abstract: The failure characteristics of power semiconductors determine necessary protection elements and fault-tolerance of the total system. To obtain information on failure characteristics, several low voltage power MOSFETs with different packages, manufacturers and voltage ratings are deliberately destroyed by exceeding the electrical parameters gate- and drain-source voltage. Furthermore, the stability of MOSFETs during a capacitor discharging depending on the amount of stored energy is investigated, which is necessary for successful level reduction in multilevel converters. The research focuses on the device behaviour after failure depending on the package technology to give a design hint for fault-tolerant applications.

   Sounds from Semiconductors - Acoustic Emission Experiment with a Power Module
By Tommi KÄRKKÄINEN, Joonas TALVITIE, Oskari IKONEN, Mikko KUISMA, Elena MENGOTTI, Pertti SILVENTOINEN [View]
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Abstract: A recent paper showed that the switching operation of a power semiconductor module causes an acousticemission to take place. In this study, that experiment is repeated using a different kind of acousticemission sensor. The same conclusion is reached in this stydy as in the previous paper: an acousticemission takes place as a result of the switching of a power module.

   Use of snappy recovery diodes is a new way to increase efficiency and reliability of hard switching power converters
By Yury KRASNIKOV [View]
[Download]

Abstract: A new low-cost snubber circuit for diode recovery in hard switching converters is proposed. A diode with snappy recovery behaviour in coupling with the proposed current snubber has close to ideal diode recovery process, so such a diode seems to be more promising than a soft recovery diode for high-power applications to which efficiency and reliability are the main care. This approach can be especially efficient in replacement of high voltage (URRM #8805; 1,7 kV) soft recovery diode, which has a large reverse recovery time (#964; #8805; 0,5#956;s) and high switching losses to snappy recovery diode. At the same time, the reliability of the diode in the case of overheating is improved since increasing the stored charge due to increasing temperature does not result in a proportional increasing of switching losses in the diode.

EPE 2014 - DS3b: Reliability
You are here: EPE Documents > 01 - EPE & EPE ECCE Conference Proceedings > EPE 2014 ECCE Europe - Conference > EPE 2014 - Topic 01: Devices, Packaging and System Integration > EPE 2014 - DS3b: Reliability
	[return to parent folder]

	Failure Characteristics of Discrete Power Semiconductor Packages Exceeding Electrical Specifications By Michael GLEISSNER, Mark BAKRAN	[View] [Download]
Abstract: The failure characteristics of power semiconductors determine necessary protection elements and fault-tolerance of the total system. To obtain information on failure characteristics, several low voltage power MOSFETs with different packages, manufacturers and voltage ratings are deliberately destroyed by exceeding the electrical parameters gate- and drain-source voltage. Furthermore, the stability of MOSFETs during a capacitor discharging depending on the amount of stored energy is investigated, which is necessary for successful level reduction in multilevel converters. The research focuses on the device behaviour after failure depending on the package technology to give a design hint for fault-tolerant applications.

	Sounds from Semiconductors - Acoustic Emission Experiment with a Power Module By Tommi KÄRKKÄINEN, Joonas TALVITIE, Oskari IKONEN, Mikko KUISMA, Elena MENGOTTI, Pertti SILVENTOINEN	[View] [Download]
Abstract: A recent paper showed that the switching operation of a power semiconductor module causes an acousticemission to take place. In this study, that experiment is repeated using a different kind of acousticemission sensor. The same conclusion is reached in this stydy as in the previous paper: an acousticemission takes place as a result of the switching of a power module.

	Use of snappy recovery diodes is a new way to increase efficiency and reliability of hard switching power converters By Yury KRASNIKOV	[View] [Download]
Abstract: A new low-cost snubber circuit for diode recovery in hard switching converters is proposed. A diode with snappy recovery behaviour in coupling with the proposed current snubber has close to ideal diode recovery process, so such a diode seems to be more promising than a soft recovery diode for high-power applications to which efficiency and reliability are the main care. This approach can be especially efficient in replacement of high voltage (URRM #8805; 1,7 kV) soft recovery diode, which has a large reverse recovery time (#964; #8805; 0,5#956;s) and high switching losses to snappy recovery diode. At the same time, the reliability of the diode in the case of overheating is improved since increasing the stored charge due to increasing temperature does not result in a proportional increasing of switching losses in the diode.