EPE Association: EPE 2013

EPE 2013 - LS5c: IGBT
You are here: EPE Documents > 01 - EPE & EPE ECCE Conference Proceedings > EPE 2013 ECCE Europe - Conference > EPE 2013 - Topic 01: Active devices > EPE 2013 - LS5c: IGBT

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   Measurement of a Complete HV IGBT I-V-Characteristic up to the Breakdown Point
By Thomas BASLER, Josef LUTZ, Riteshkumar BHOJANI, Roland JAKOB [View]
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Abstract: This paper describes how to measure the complete output characteristic of a high-voltage IGBT non- destructively up to the breakdown point and beyond. Hereby, a deep knowledge of the IGBT behaviour at high voltages and saturation currents is gained. To construct the complete characteristic, short-circuit and curve-tracer measurements are combined. The results are compared and recapitulated with semicon- ductor simulations of IGBT models fitted to experimental characteristics.

   Reverse-Conducting-IGBTs - A new IGBT technology setting new benchmarks in traction converters
By Robert HERMANN, Eberhard KRAFFT, Andreas MAERZ [View]
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Abstract: In this paper the main advantages of 6.5 kV Reverse Conducting IGBTs (RC-IGBTs) compared to state-of-the-art two-chip IGBT/Diode solutions for traction applications are discussed. The experimental results show the potential of RC-IGBTs as well as the increased requirements on the gate control strategy.

   Short Circuit Behavior of the Bi-mode Insulated Gate Transistor (BIGT)
By Jorge MARI, Chiara CORVASCE, Munaf RAHIMO, Arnost KOPTA, Liutauras STORASTA [View]
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Abstract: The BIGT is a Reverse Conducting IGBT device which combines functionality of a high power IGBT and fast diode on a single chip. In this paper, an investigation of the IGBT mode short circuit performance of the BIGT is carried out. The behavior of the BIGT under IGBT mode short circuit conditions is illustrated by measurements on a 3.3kV 1500A HiPak1 module and then supported by circuit and detailed device physics simulations. The short circuit conditions of type II and type III are discussed, with the variations introduced due to the gate control of the BIGT when operated in reverse conducting mode. Comparison to standard IGBTs with Soft-Punch-Through (SPT) technology in a HiPak2 module is also provided.

EPE 2013 - LS5c: IGBT
You are here: EPE Documents > 01 - EPE & EPE ECCE Conference Proceedings > EPE 2013 ECCE Europe - Conference > EPE 2013 - Topic 01: Active devices > EPE 2013 - LS5c: IGBT
	[return to parent folder]

	Measurement of a Complete HV IGBT I-V-Characteristic up to the Breakdown Point By Thomas BASLER, Josef LUTZ, Riteshkumar BHOJANI, Roland JAKOB	[View] [Download]
Abstract: This paper describes how to measure the complete output characteristic of a high-voltage IGBT non- destructively up to the breakdown point and beyond. Hereby, a deep knowledge of the IGBT behaviour at high voltages and saturation currents is gained. To construct the complete characteristic, short-circuit and curve-tracer measurements are combined. The results are compared and recapitulated with semicon- ductor simulations of IGBT models fitted to experimental characteristics.

	Reverse-Conducting-IGBTs - A new IGBT technology setting new benchmarks in traction converters By Robert HERMANN, Eberhard KRAFFT, Andreas MAERZ	[View] [Download]
Abstract: In this paper the main advantages of 6.5 kV Reverse Conducting IGBTs (RC-IGBTs) compared to state-of-the-art two-chip IGBT/Diode solutions for traction applications are discussed. The experimental results show the potential of RC-IGBTs as well as the increased requirements on the gate control strategy.

	Short Circuit Behavior of the Bi-mode Insulated Gate Transistor (BIGT) By Jorge MARI, Chiara CORVASCE, Munaf RAHIMO, Arnost KOPTA, Liutauras STORASTA	[View] [Download]
Abstract: The BIGT is a Reverse Conducting IGBT device which combines functionality of a high power IGBT and fast diode on a single chip. In this paper, an investigation of the IGBT mode short circuit performance of the BIGT is carried out. The behavior of the BIGT under IGBT mode short circuit conditions is illustrated by measurements on a 3.3kV 1500A HiPak1 module and then supported by circuit and detailed device physics simulations. The short circuit conditions of type II and type III are discussed, with the variations introduced due to the gate control of the BIGT when operated in reverse conducting mode. Comparison to standard IGBTs with Soft-Punch-Through (SPT) technology in a HiPak2 module is also provided.