EPE Association: EPE 2011 - LS2c: Topic 01

EPE 2011 - LS2c: Topic 01 - SiC Applications
You are here: EPE Documents > 01 - EPE & EPE ECCE Conference Proceedings > EPE 2011 ECCE Europe - Conference > EPE 2011 - Topic 01: Active Devices > EPE 2011 - LS2c: Topic 01 - SiC Applications

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   Experimental comparison of dc-dc boost converters with SiC JFETs and SiC bipolar transistors
By Dimosthenis PEFTITSIS, Jacek RABKOWSKI, Georg TOLSTOY, Hans-Peter NEE [View]
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Abstract: An experimental performance comparison between SiC JFET and SiC BJT switches which are used as the main switch for a 2 kW dc/dc converter is presented. In order to perform a fair comparison and due to the different chip areas of these two SiC devices, they both operate under the same on-state losses. Moreover, the switching speeds of the gate and base drivers are approximately equal. It is experimentally shown that the SiC BJT is switching slightly faster than the SiC JFET under the same circuit conditions, while the driver loss for the SiC BJT is higher than for the JFET, especially at relatively low switching frequencies. Various experimental results dealing with the switching performance of the SiC devices and the power losses at different switching frequencies are presented. It is found that the BJT converter has a higher efficiency (99.0\% measured at 50 kHz) that the JFET converter.

   Fast switching 1200 V 50 A Silicon Carbide BJT’s in boost converters
By Anders LINDGREN, Martin DOMEIJ [View]
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Abstract: Silicon carbide (SiC) bipolar junction transistors (BJT’s) are normally-off fast switching devices with very low collector-emitter voltages (VCE), combining the best of properties from unipolar and bipolar technology. They switch fast with turn-offs from semi saturated state without current tails and have the same time extremely low saturated UCE values. SiC BJT’s free from bipolar degradation were fabricated and packaged in TO-247 packages. The BJT’s fabricated were characterized both statically and dynamically in a setup similar to a switching application, as well as tested for stability. A SPICE model was developed and simulations of the switching transitions were done and compared to measurements. The good properties of SiC BJT’s make a large impact on system design. Higher efficiencies can be achieved at higher switching frequencies, which reduce size of inductances and heat sinks, as has been shown by simulations.

   Modularized Design Consideration of a General-Purpose, High-Speed Phase-Leg PEBB based on SiC MOSFETs
By Zheng CHEN, Milisav DANILOVIC, Dushan BOROYEVICH, Zhiyu SHEN [View]
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Abstract: This paper presents the modularized design and analysis of a phase-leg module based on the Power Electronics Building Block (PEBB) concept, which aims at generalizing the phase-leg as a subsystem for various converter topologies through smart control schemes. The recently commercialized 1200 V SiC MOSFETs and SiC Schottky diodes from Cree are used as the main switches of the phase-leg, in order to explore the potentials of the pure SiC systems in achieving higher switching frequency and power density for 600 to 800 V, medium-power converters. To build the phase-leg module, the new SiC MOSFET has been fully characterized beyond the datasheet temperature range. The device switching speed has also been pushed as fast as possible through optimized gate driver and circuit layout designs, so as to achieve the high-frequency operation capability of the SiC PEBBs.

EPE 2011 - LS2c: Topic 01 - SiC Applications
You are here: EPE Documents > 01 - EPE & EPE ECCE Conference Proceedings > EPE 2011 ECCE Europe - Conference > EPE 2011 - Topic 01: Active Devices > EPE 2011 - LS2c: Topic 01 - SiC Applications
	[return to parent folder]

	Experimental comparison of dc-dc boost converters with SiC JFETs and SiC bipolar transistors By Dimosthenis PEFTITSIS, Jacek RABKOWSKI, Georg TOLSTOY, Hans-Peter NEE	[View] [Download]
Abstract: An experimental performance comparison between SiC JFET and SiC BJT switches which are used as the main switch for a 2 kW dc/dc converter is presented. In order to perform a fair comparison and due to the different chip areas of these two SiC devices, they both operate under the same on-state losses. Moreover, the switching speeds of the gate and base drivers are approximately equal. It is experimentally shown that the SiC BJT is switching slightly faster than the SiC JFET under the same circuit conditions, while the driver loss for the SiC BJT is higher than for the JFET, especially at relatively low switching frequencies. Various experimental results dealing with the switching performance of the SiC devices and the power losses at different switching frequencies are presented. It is found that the BJT converter has a higher efficiency (99.0\% measured at 50 kHz) that the JFET converter.

	Fast switching 1200 V 50 A Silicon Carbide BJT’s in boost converters By Anders LINDGREN, Martin DOMEIJ	[View] [Download]
Abstract: Silicon carbide (SiC) bipolar junction transistors (BJT’s) are normally-off fast switching devices with very low collector-emitter voltages (VCE), combining the best of properties from unipolar and bipolar technology. They switch fast with turn-offs from semi saturated state without current tails and have the same time extremely low saturated UCE values. SiC BJT’s free from bipolar degradation were fabricated and packaged in TO-247 packages. The BJT’s fabricated were characterized both statically and dynamically in a setup similar to a switching application, as well as tested for stability. A SPICE model was developed and simulations of the switching transitions were done and compared to measurements. The good properties of SiC BJT’s make a large impact on system design. Higher efficiencies can be achieved at higher switching frequencies, which reduce size of inductances and heat sinks, as has been shown by simulations.

	Modularized Design Consideration of a General-Purpose, High-Speed Phase-Leg PEBB based on SiC MOSFETs By Zheng CHEN, Milisav DANILOVIC, Dushan BOROYEVICH, Zhiyu SHEN	[View] [Download]
Abstract: This paper presents the modularized design and analysis of a phase-leg module based on the Power Electronics Building Block (PEBB) concept, which aims at generalizing the phase-leg as a subsystem for various converter topologies through smart control schemes. The recently commercialized 1200 V SiC MOSFETs and SiC Schottky diodes from Cree are used as the main switches of the phase-leg, in order to explore the potentials of the pure SiC systems in achieving higher switching frequency and power density for 600 to 800 V, medium-power converters. To build the phase-leg module, the new SiC MOSFET has been fully characterized beyond the datasheet temperature range. The device switching speed has also been pushed as fast as possible through optimized gate driver and circuit layout designs, so as to achieve the high-frequency operation capability of the SiC PEBBs.