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Fast switching 1200 V 50 A Silicon Carbide BJT’s in boost converters
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| Author(s) |
Anders LINDGREN, Martin DOMEIJ |
| Abstract |
Silicon carbide (SiC) bipolar junction transistors (BJT’s) are normally-off fast switching devices with very low collector-emitter voltages (VCE), combining the best of properties from unipolar and bipolar technology. They switch fast with turn-offs from semi saturated state without current tails and have the same time extremely low saturated UCE values. SiC BJT’s free from bipolar degradation were fabricated and packaged in TO-247 packages. The BJT’s fabricated were characterized both statically and dynamically in a setup similar to a switching application, as well as tested for stability. A SPICE model was developed and simulations of the switching transitions were done and compared to measurements. The good properties of SiC BJT’s make a large impact on system design. Higher efficiencies can be achieved at higher switching frequencies, which reduce size of inductances and heat sinks, as has been shown by simulations. |
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| Filename: | 0493-epe2011-full-14571004.pdf |
| Filesize: | 1.162 MB |
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| Type |
Members Only |
| Date |
Last modified 2012-01-26 by System |
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