EPE Association: EPE 2011 - LS3c: Topic 01 - Device Ruggedness and Control

EPE 2011 - LS3c: Topic 01 - Device Ruggedness and Control
You are here: EPE Documents > 01 - EPE & EPE ECCE Conference Proceedings > EPE 2011 ECCE Europe - Conference > EPE 2011 - Topic 01: Active Devices > EPE 2011 - LS3c: Topic 01 - Device Ruggedness and Control

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   Active Control of Series Connected, Voltage Driven Power Devices using a Single Gate Drive
By Paul EVANS, Nithiphat TEERAKAWANICH, C Mark JOHNSON [View]
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Abstract: A novel approach for controlling series strings of voltage driven devices (e.g. JFET, MOSFET, IGBT) is presented that allows high voltage switches to be constructed from lower voltage devices. The approach allows controlled voltage sharing under steady-state and transient conditions and is achieved using a simple passive gate-side control circuit of resistors, capacitors, diodes and Zener diodes. Once implemented, the control circuit requires only a single, standard gate-drive for operation. Furthermore, the dynamic voltage sharing and dV/dt during switching is determined by the choice of circuit parameters and not the device characteristics. The approach is validated both with simulation and experimental results

   Negative differential miller capacitance during switching transients of IGBTs
By Juergen BOEHMER, Joerg SCHUMANN, Hans-Guenter ECKEL [View]
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Abstract: The paper shows, that the miller capacitance of IGBTs has not only the well known voltage dependency, but dependents also on the collector current and the gate drive conditions. The differential miller capacitance might even become negative, which leads to a self-turn-off process of the IGBT during switching transients. Measurement and simulation results are presented which show this self-turn-off.

   The Influence of Asymmetries on the Parallel Connection of IGBT Chips under Short-Circuit Condition
By Thomas BASLER, Josef LUTZ, Roland JAKOB, Thomas BRÜCKNER [View]
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Abstract: This paper describes the influence of asymmetries on the parallel connection of high-voltage IGBT chipsunder short-circuit condition. Especially under short-circuit type two even small asymmetries in the outputcharacteristics of paralleled IGBT chips reduce the short-circuit capability of the parallel connectiondrastically.

EPE 2011 - LS3c: Topic 01 - Device Ruggedness and Control
You are here: EPE Documents > 01 - EPE & EPE ECCE Conference Proceedings > EPE 2011 ECCE Europe - Conference > EPE 2011 - Topic 01: Active Devices > EPE 2011 - LS3c: Topic 01 - Device Ruggedness and Control
	[return to parent folder]

	Active Control of Series Connected, Voltage Driven Power Devices using a Single Gate Drive By Paul EVANS, Nithiphat TEERAKAWANICH, C Mark JOHNSON	[View] [Download]
Abstract: A novel approach for controlling series strings of voltage driven devices (e.g. JFET, MOSFET, IGBT) is presented that allows high voltage switches to be constructed from lower voltage devices. The approach allows controlled voltage sharing under steady-state and transient conditions and is achieved using a simple passive gate-side control circuit of resistors, capacitors, diodes and Zener diodes. Once implemented, the control circuit requires only a single, standard gate-drive for operation. Furthermore, the dynamic voltage sharing and dV/dt during switching is determined by the choice of circuit parameters and not the device characteristics. The approach is validated both with simulation and experimental results

	Negative differential miller capacitance during switching transients of IGBTs By Juergen BOEHMER, Joerg SCHUMANN, Hans-Guenter ECKEL	[View] [Download]
Abstract: The paper shows, that the miller capacitance of IGBTs has not only the well known voltage dependency, but dependents also on the collector current and the gate drive conditions. The differential miller capacitance might even become negative, which leads to a self-turn-off process of the IGBT during switching transients. Measurement and simulation results are presented which show this self-turn-off.

	The Influence of Asymmetries on the Parallel Connection of IGBT Chips under Short-Circuit Condition By Thomas BASLER, Josef LUTZ, Roland JAKOB, Thomas BRÜCKNER	[View] [Download]
Abstract: This paper describes the influence of asymmetries on the parallel connection of high-voltage IGBT chipsunder short-circuit condition. Especially under short-circuit type two even small asymmetries in the outputcharacteristics of paralleled IGBT chips reduce the short-circuit capability of the parallel connectiondrastically.