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The Influence of Asymmetries on the Parallel Connection of IGBT Chips under Short-Circuit Condition
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Author(s) |
Thomas BASLER, Josef LUTZ, Roland JAKOB, Thomas BRÜCKNER |
Abstract |
This paper describes the influence of asymmetries on the parallel connection of high-voltage IGBT chipsunder short-circuit condition. Especially under short-circuit type two even small asymmetries in the outputcharacteristics of paralleled IGBT chips reduce the short-circuit capability of the parallel connectiondrastically. |
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Filename: | 0426-epe2011-full-17114722.pdf |
Filesize: | 937.8 KB |
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Type |
Members Only |
Date |
Last modified 2012-01-26 by System |
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