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   The Influence of Asymmetries on the Parallel Connection of IGBT Chips under Short-Circuit Condition   [View] 
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 Author(s)   Thomas BASLER, Josef LUTZ, Roland JAKOB, Thomas BRÜCKNER 
 Abstract   This paper describes the influence of asymmetries on the parallel connection of high-voltage IGBT chipsunder short-circuit condition. Especially under short-circuit type two even small asymmetries in the outputcharacteristics of paralleled IGBT chips reduce the short-circuit capability of the parallel connectiondrastically. 
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Filename:0426-epe2011-full-17114722.pdf
Filesize:937.8 KB
 Type   Members Only 
 Date   Last modified 2012-01-26 by System