EPE Association: EPE 2009 - Subtopic 18-1 - LS: 'Operating Quality of Systems'

EPE 2009 - Subtopic 18-1 - LS: 'Operating Quality of Systems'
You are here: EPE Documents > 01 - EPE & EPE ECCE Conference Proceedings > EPE 2009 - Conference > EPE 2009 - Topic 18: 'Operating Quality of Systems' > EPE 2009 - Subtopic 18-1 - LS: 'Operating Quality of Systems'

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   Different Approaches to Reduce Shaft Voltage in AC Generators
By JAFAR ADABI, Firuz ZARE, Arindam GHOSH [View]
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Abstract: This paper presents several shaft voltage reduction techniques for doubly-fed induction generators in wind turbine applications. These techniques includes: pulse width modulated voltage without zero vectors, multi-level inverters with proper PWM strategy, better generator design to minimize effective capacitive couplings in shaft voltage, active common-mode filter, reducing dc-link voltage and increasing modulation index. These methods have been verified with mathematical analysis and simulations.

   Cycle Stress Test Equipment for Automated Short Circuit Testing of Smart Power Switches According to the AEC Q100-012 Standard
By Michael GLAVANOVICS, Hans-Peter KREUTER, Roland SLEIK, Christoph SCHREIBER [View]
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Abstract: We present the design of a cycle test system for automated stress testing of smart power switches under automotive load short circuit conditions up to 250A / 50V. A fast overcurrent detection and shutdown strategy protects the test equipment from damage. Device degradation and failure data are recorded individually for statistical analysis of time-to-failure distributions. Representative measurements show that our system meets the requirements of the AEC standard Q100-012.

   Indirect thermal measurement on SIC JFET transistors
By StÃ©phane LEFEBVRE [View]
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Abstract: Thermal and reliability studies on SiC JFET transistors need estimation of junction temperature. The paper depicts results obtained with two thermal indicators (on-state resistance and gate to source voltage). These two thermal indicators may be used as indirect temperature sensors during heating phases of the transistor. This temperature allows estimating the thermal impedance (Zth) of the device which contains the full thermal description of the power module.

EPE 2009 - Subtopic 18-1 - LS: 'Operating Quality of Systems'
You are here: EPE Documents > 01 - EPE & EPE ECCE Conference Proceedings > EPE 2009 - Conference > EPE 2009 - Topic 18: 'Operating Quality of Systems' > EPE 2009 - Subtopic 18-1 - LS: 'Operating Quality of Systems'
	[return to parent folder]

	Different Approaches to Reduce Shaft Voltage in AC Generators By JAFAR ADABI, Firuz ZARE, Arindam GHOSH	[View] [Download]
Abstract: This paper presents several shaft voltage reduction techniques for doubly-fed induction generators in wind turbine applications. These techniques includes: pulse width modulated voltage without zero vectors, multi-level inverters with proper PWM strategy, better generator design to minimize effective capacitive couplings in shaft voltage, active common-mode filter, reducing dc-link voltage and increasing modulation index. These methods have been verified with mathematical analysis and simulations.

	Cycle Stress Test Equipment for Automated Short Circuit Testing of Smart Power Switches According to the AEC Q100-012 Standard By Michael GLAVANOVICS, Hans-Peter KREUTER, Roland SLEIK, Christoph SCHREIBER	[View] [Download]
Abstract: We present the design of a cycle test system for automated stress testing of smart power switches under automotive load short circuit conditions up to 250A / 50V. A fast overcurrent detection and shutdown strategy protects the test equipment from damage. Device degradation and failure data are recorded individually for statistical analysis of time-to-failure distributions. Representative measurements show that our system meets the requirements of the AEC standard Q100-012.

	Indirect thermal measurement on SIC JFET transistors By StÃ©phane LEFEBVRE	[View] [Download]
Abstract: Thermal and reliability studies on SiC JFET transistors need estimation of junction temperature. The paper depicts results obtained with two thermal indicators (on-state resistance and gate to source voltage). These two thermal indicators may be used as indirect temperature sensors during heating phases of the transistor. This temperature allows estimating the thermal impedance (Zth) of the device which contains the full thermal description of the power module.