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   Indirect thermal measurement on SIC JFET transistors   [View] 
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 Author(s)   Stéphane LEFEBVRE 
 Abstract   Thermal and reliability studies on SiC JFET transistors need estimation of junction temperature. The paper depicts results obtained with two thermal indicators (on-state resistance and gate to source voltage). These two thermal indicators may be used as indirect temperature sensors during heating phases of the transistor. This temperature allows estimating the thermal impedance (Zth) of the device which contains the full thermal description of the power module.  
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Filename:0975-epe2009-full-23021629.pdf
Filesize:2.501 MB
 Type   Members Only 
 Date   Last modified 2010-01-27 by System