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Indirect thermal measurement on SIC JFET transistors
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Author(s) |
Stéphane LEFEBVRE |
Abstract |
Thermal and reliability studies on SiC JFET transistors need estimation of junction temperature. The paper depicts results obtained with two thermal indicators (on-state resistance and gate to source voltage). These two thermal indicators may be used as indirect temperature sensors during heating phases of the transistor. This temperature allows estimating the thermal impedance (Zth) of the device which contains the full thermal description of the power module. |
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Filename: | 0975-epe2009-full-23021629.pdf |
Filesize: | 2.501 MB |
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Type |
Members Only |
Date |
Last modified 2010-01-27 by System |
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