EPE Association: EPE 2009 - subtopic 01-4 - LS: 'Power Device Ruggedness and Losses'

EPE 2009 - subtopic 01-4 - LS: 'Power Device Ruggedness and Losses'
You are here: EPE Documents > 01 - EPE & EPE ECCE Conference Proceedings > EPE 2009 - Conference > EPE 2009 - Topic 01: 'Active Devices' > EPE 2009 - subtopic 01-4 - LS: 'Power Device Ruggedness and Losses'

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   On-line Junction Temperature Measurement of IGBTs based on Temperature Sensitive Electrical Parameters
By Harald KUHN, Axel MERTENS [View]
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Abstract: This paper deals with a method to derive the junction temperature of an IGBT while the device is in operation. In order to achieve this the gate-emitter voltage, the collector current and the collector-emitter voltage are digitized on the driver board. Due to the fact that material parameters vary with temperature, the waveforms of the switching transients vary with temperature, too. Thus, there is a correlation between the temperature and the switching waveforms. Evaluating temperature sensitive electrical parameters (TSEP), the working temperature of the device can be estimated.

   Short Circuit III in High Power IGBTs
By Josef LUTZ, Ralf DÃ–BLER, Jorge MARI, Matthias MENZEL [View]
[Download]

Abstract: Short circuit III is the occurrence of a short circuit across the load during the conducting mode of the freewheeling diode. This has the same importance for the application of high power IGBTs as the known short circuit II. Different to short circuit II, the IGBT of the same module is now turned-on starting from very low voltage across its terminals and showing a forward recovery voltage before saturating. After that a dynamic short circuit peak current occurs similar to the one seen in SC II. Dur-ing the short circuit, a reverse recovery process occurs at the freewheeling diode with a very high volt-age slope.

   Simple Methods to Calculate IGBT and Diode Conduction and Switching Losses
By Gudrun FEIX, Sibylle DIECKERHOFF, Jost ALLMELING, John SCHOENBERGER [View]
[Download]

Abstract: This paper presents fast and simple methods to calculate IGBT and diode switching and conduction losses in power electronic system simulation. With the models derived in this paper, these losses can be calculated although the device data is incomplete. A novel approach to calculate diode reverse recovery losses is included. Furthermore, the correlation between stray inductance and switching energy is investigated.

EPE 2009 - subtopic 01-4 - LS: 'Power Device Ruggedness and Losses'
You are here: EPE Documents > 01 - EPE & EPE ECCE Conference Proceedings > EPE 2009 - Conference > EPE 2009 - Topic 01: 'Active Devices' > EPE 2009 - subtopic 01-4 - LS: 'Power Device Ruggedness and Losses'
	[return to parent folder]

	On-line Junction Temperature Measurement of IGBTs based on Temperature Sensitive Electrical Parameters By Harald KUHN, Axel MERTENS	[View] [Download]
Abstract: This paper deals with a method to derive the junction temperature of an IGBT while the device is in operation. In order to achieve this the gate-emitter voltage, the collector current and the collector-emitter voltage are digitized on the driver board. Due to the fact that material parameters vary with temperature, the waveforms of the switching transients vary with temperature, too. Thus, there is a correlation between the temperature and the switching waveforms. Evaluating temperature sensitive electrical parameters (TSEP), the working temperature of the device can be estimated.

	Short Circuit III in High Power IGBTs By Josef LUTZ, Ralf DÃ–BLER, Jorge MARI, Matthias MENZEL	[View] [Download]
Abstract: Short circuit III is the occurrence of a short circuit across the load during the conducting mode of the freewheeling diode. This has the same importance for the application of high power IGBTs as the known short circuit II. Different to short circuit II, the IGBT of the same module is now turned-on starting from very low voltage across its terminals and showing a forward recovery voltage before saturating. After that a dynamic short circuit peak current occurs similar to the one seen in SC II. Dur-ing the short circuit, a reverse recovery process occurs at the freewheeling diode with a very high volt-age slope.

	Simple Methods to Calculate IGBT and Diode Conduction and Switching Losses By Gudrun FEIX, Sibylle DIECKERHOFF, Jost ALLMELING, John SCHOENBERGER	[View] [Download]
Abstract: This paper presents fast and simple methods to calculate IGBT and diode switching and conduction losses in power electronic system simulation. With the models derived in this paper, these losses can be calculated although the device data is incomplete. A novel approach to calculate diode reverse recovery losses is included. Furthermore, the correlation between stray inductance and switching energy is investigated.