EPE Association: EPE 2009 - Subtopic 01-2 - LS: 'High Power SC for Industrial Power'

EPE 2009 - Subtopic 01-2 - LS: 'High Power SC for Industrial Power'
You are here: EPE Documents > 01 - EPE & EPE ECCE Conference Proceedings > EPE 2009 - Conference > EPE 2009 - Topic 01: 'Active Devices' > EPE 2009 - Subtopic 01-2 - LS: 'High Power SC for Industrial Power'

   [return to parent folder]

   Diodes and Thyristor - past, presence and future
By Jens PRZYBILLA, J. DORN, R. BARTHELMESS, U. KELLNER-WERDEHAUSEN, H.-J. SCHULZE, F.-J. NIEDERNOSTHEIDE [View]
[Download]

Abstract: Diodes and thyristors are an essential component in electronics and especially in power electronics applications. At the beginning, germanium and silicon were mainly used as semiconducting base materials. Silicon is nowadays the most frequently used base material for the production of diodes and thyristors. The first diodes were able to block a few volts and conducted only a few amperes. Today single wafer diodes are able to block more than 9000V over a wide temperature range; also thyristors are able to block more than 8000V. Theses devices are able to conduct more than 4000A. The following major milestones were achieved in the last decades: 1994 Electrically-triggered thyristor for 8000V and 1500A. 1997 First direct light-triggered thyristors for 8000V with integrated protection functions 1999 PowerBLOCK module for 4400V and 1000A 2000 Diode with 9000V and 2600A 2006 New Diode for IGCT Applications 2008 Electrically-triggered thyristors for 8000V and 4000A in 6-inch wafer technology. An overview of state of the art production technologies of high-power pressure contact semiconductors is presented in this paper; typical applications with their specific requirements to the semiconductors are also discussed.

   High Voltage Semiconductor Technologies
By Munaf RAHIMO, Sven KLAKA [View]
[Download]

Abstract: High voltage semiconductor devices continue to play a major role in modern megawatt power systems especially in the fields of traction, transmission and distribution (T&D) and industrial applications. The main development trend of power devices has always been focused on increasing the power ratings while improving the over all device performance in terms of reduced losses, increased robustness, better controllability and reliable behavior under normal and fault conditions. This paper will focus on the main two high voltage turn-off device concepts, namely the IGCT and IGBT. Recent device developments and future trends will be discussed to provide the power electronics community of what can be expected in the coming years from the power device performance viewpoint.

   Power Semiconductors for Medium Voltage Converters - An Overview
By Rainer SOMMER [View]
[Download]

Abstract: This Presentation will show an overview of Power Semiconductors for Medium Voltage Converters.

EPE 2009 - Subtopic 01-2 - LS: 'High Power SC for Industrial Power'
You are here: EPE Documents > 01 - EPE & EPE ECCE Conference Proceedings > EPE 2009 - Conference > EPE 2009 - Topic 01: 'Active Devices' > EPE 2009 - Subtopic 01-2 - LS: 'High Power SC for Industrial Power'
	[return to parent folder]

	Diodes and Thyristor - past, presence and future By Jens PRZYBILLA, J. DORN, R. BARTHELMESS, U. KELLNER-WERDEHAUSEN, H.-J. SCHULZE, F.-J. NIEDERNOSTHEIDE	[View] [Download]
Abstract: Diodes and thyristors are an essential component in electronics and especially in power electronics applications. At the beginning, germanium and silicon were mainly used as semiconducting base materials. Silicon is nowadays the most frequently used base material for the production of diodes and thyristors. The first diodes were able to block a few volts and conducted only a few amperes. Today single wafer diodes are able to block more than 9000V over a wide temperature range; also thyristors are able to block more than 8000V. Theses devices are able to conduct more than 4000A. The following major milestones were achieved in the last decades: 1994 Electrically-triggered thyristor for 8000V and 1500A. 1997 First direct light-triggered thyristors for 8000V with integrated protection functions 1999 PowerBLOCK module for 4400V and 1000A 2000 Diode with 9000V and 2600A 2006 New Diode for IGCT Applications 2008 Electrically-triggered thyristors for 8000V and 4000A in 6-inch wafer technology. An overview of state of the art production technologies of high-power pressure contact semiconductors is presented in this paper; typical applications with their specific requirements to the semiconductors are also discussed.

	High Voltage Semiconductor Technologies By Munaf RAHIMO, Sven KLAKA	[View] [Download]
Abstract: High voltage semiconductor devices continue to play a major role in modern megawatt power systems especially in the fields of traction, transmission and distribution (T&D) and industrial applications. The main development trend of power devices has always been focused on increasing the power ratings while improving the over all device performance in terms of reduced losses, increased robustness, better controllability and reliable behavior under normal and fault conditions. This paper will focus on the main two high voltage turn-off device concepts, namely the IGCT and IGBT. Recent device developments and future trends will be discussed to provide the power electronics community of what can be expected in the coming years from the power device performance viewpoint.

	Power Semiconductors for Medium Voltage Converters - An Overview By Rainer SOMMER	[View] [Download]
Abstract: This Presentation will show an overview of Power Semiconductors for Medium Voltage Converters.