| Abstract |
High voltage semiconductor devices continue to play a major role in modern megawatt power systems especially in the fields of traction, transmission and distribution (T&D) and industrial applications. The main development trend of power devices has always been focused on increasing the power ratings while improving the over all device performance in terms of reduced losses, increased robustness, better controllability and reliable behavior under normal and fault conditions. This paper will focus on the main two high voltage turn-off device concepts, namely the IGCT and IGBT. Recent device developments and future trends will be discussed to provide the power electronics community of what can be expected in the coming years from the power device performance viewpoint. |
