EPE Association: EPE 2009 - Subtopic 01-3

EPE 2009 - Subtopic 01-3 - LS: 'New Power Devices'
You are here: EPE Documents > 01 - EPE & EPE ECCE Conference Proceedings > EPE 2009 - Conference > EPE 2009 - Topic 01: 'Active Devices' > EPE 2009 - Subtopic 01-3 - LS: 'New Power Devices'

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   Comparison of Switching and Conducting Performance of SiC-JFET and SiC-BJT with a State of the Art IGBT
By W.-Toke FRANKE, Friedrich W. FUCHS [View]
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Abstract: Silicon Carbide (SiC) power semiconductors being actually in development are promising devices for the future. To outline their characteristics the switching and conducting performance of a SiC-JFET and a SiC-BJT are investigated and compared to a state of the art Si-IGBT. The power losses, the switching times and the efforts for the driving circuits are investigated. The focus is put on the influence of the junction temperature on the power losses of the investigated devices. Therefore, 1200 V / 6 A devices have been used. The BJT and JFET show some advantages concerning their total losses and their temperature range.

   Realization of Higher Output Power Capability with the Bi-Mode Insulated Gate Transistor (BIGT)
By Munaf RAHIMO, Ulrich SCHLAPBACH, Raffael SCHNELL, Arnost KOPTA, Jan VOBECKY, Andreas BASCHNAGEL [View]
[Download]

Abstract: In this paper, we discuss the potential of realizing future applications with much increased output power capability utilizing the newly developed Bi-mode Insulated Gate Transistor (BIGT). The BIGT represents an advanced Reverse Conducting (RC) IGBT concept implying that the device can operate in both freewheeling diode mode and (IGBT) transistor mode by utilizing the same available silicon volume in both modes. The BIGT design differs from the standard RC-IGBT in that it targets to fully replace the state-of-the-art two-chip IGBT/Diode approach with a single BIGT chip. This is achieved while also being capable of improving on the over-all performance especially under hard switching conditions where low static and dynamic losses, soft turn-off and high SOA are essential characteristics. The practical realization of the BIGT technology will provide a potential solution for future high voltage applications demanding compact systems with higher power levels, which could prove to be beyond the capability of the standard two-chip approach.

   Space-saving edge-termination structures for vertical charge compensation devices
By Ralf SIEMIENIEC, Christian GEISSLER, Franz HIRLER [View]
[Download]

Abstract: High efficiency is one of the major requirements of todayâ€™s modern power architectures. To achieve the needs of modern power topologies, advanced power device designs are essential. In the field of low-voltage devices, covering a range up to 250 V, a significant reduction of the MOSFET on-resistance is achieved by employing the compensation principle based on field-plates. Such devices do require new design techniques. Advanced edge-termination structures enable high blocking voltages exceeding 100 V. This work proposes different edge-termination structures and shows first results and benchmarks of manufactured devices from this new MOSFET design generation.

EPE 2009 - Subtopic 01-3 - LS: 'New Power Devices'
You are here: EPE Documents > 01 - EPE & EPE ECCE Conference Proceedings > EPE 2009 - Conference > EPE 2009 - Topic 01: 'Active Devices' > EPE 2009 - Subtopic 01-3 - LS: 'New Power Devices'
	[return to parent folder]

	Comparison of Switching and Conducting Performance of SiC-JFET and SiC-BJT with a State of the Art IGBT By W.-Toke FRANKE, Friedrich W. FUCHS	[View] [Download]
Abstract: Silicon Carbide (SiC) power semiconductors being actually in development are promising devices for the future. To outline their characteristics the switching and conducting performance of a SiC-JFET and a SiC-BJT are investigated and compared to a state of the art Si-IGBT. The power losses, the switching times and the efforts for the driving circuits are investigated. The focus is put on the influence of the junction temperature on the power losses of the investigated devices. Therefore, 1200 V / 6 A devices have been used. The BJT and JFET show some advantages concerning their total losses and their temperature range.

	Realization of Higher Output Power Capability with the Bi-Mode Insulated Gate Transistor (BIGT) By Munaf RAHIMO, Ulrich SCHLAPBACH, Raffael SCHNELL, Arnost KOPTA, Jan VOBECKY, Andreas BASCHNAGEL	[View] [Download]
Abstract: In this paper, we discuss the potential of realizing future applications with much increased output power capability utilizing the newly developed Bi-mode Insulated Gate Transistor (BIGT). The BIGT represents an advanced Reverse Conducting (RC) IGBT concept implying that the device can operate in both freewheeling diode mode and (IGBT) transistor mode by utilizing the same available silicon volume in both modes. The BIGT design differs from the standard RC-IGBT in that it targets to fully replace the state-of-the-art two-chip IGBT/Diode approach with a single BIGT chip. This is achieved while also being capable of improving on the over-all performance especially under hard switching conditions where low static and dynamic losses, soft turn-off and high SOA are essential characteristics. The practical realization of the BIGT technology will provide a potential solution for future high voltage applications demanding compact systems with higher power levels, which could prove to be beyond the capability of the standard two-chip approach.

	Space-saving edge-termination structures for vertical charge compensation devices By Ralf SIEMIENIEC, Christian GEISSLER, Franz HIRLER	[View] [Download]
Abstract: High efficiency is one of the major requirements of todayâ€™s modern power architectures. To achieve the needs of modern power topologies, advanced power device designs are essential. In the field of low-voltage devices, covering a range up to 250 V, a significant reduction of the MOSFET on-resistance is achieved by employing the compensation principle based on field-plates. Such devices do require new design techniques. Advanced edge-termination structures enable high blocking voltages exceeding 100 V. This work proposes different edge-termination structures and shows first results and benchmarks of manufactured devices from this new MOSFET design generation.