EPE Association: EPE-PEMC 2008 - Topic: Present State and Future of Silicon Carbide Power Semiconductor Devices

EPE-PEMC 2008 - Topic: Present State and Future of Silicon Carbide Power Semiconductor Devices
You are here: EPE Documents > 04 - EPE-PEMC Conference Proceedings > EPE-PEMC 2008 - Conference > EPE-PEMC 2008 - Topic: Present State and Future of Silicon Carbide Power Semiconductor Devices

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   Characterization of the Static and Dynamic Behavior of a SiC BJT
By M. M. R. Ahmed [View]
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Abstract: Silicon carbide (SiC) bipolar junction transistors (BJTs) are interesting candidates for high temperature and for high power applications primarily due to their low conduction losses and fast switching capability. The aim of this paper is to test and evaluate both the static and dynamic characteristics of SiC bipolar junction transistor (developed by TranSiC) rated at 600 V and 6 A at different temperatures. The high power curve tracer 371B has been used to test the DC output characteristics of the device in a temperature range of - 40 °C to 175 °C. A single pulse switching inductive load circuit has been used to test the dynamic characteristics of the SiC BJT. The experimental results with a normal gate drive circuit, show that the device has a turn on time of less than 0.5 μs and turn off time of less than 0.35 μs under test condition of 300 V, 10 A in an ambient temperature of range - 40 °C to 125 °C. In addition, the experimental data were analyzed to obtain the device performance parameters like the turn on, off time, transistor gain and switching losses.

   Power Devices in Polish National Silicon Carbide Program
By Mariusz Sochacki [View]
[Download]

Abstract: Polish Government Program "New technologies based on silicon carbide and their applications in high frequency, high power and high temperature electronics" covers an project package that consists of three general tasks. The contribution presents the overview of projects in the field dealing with the design and manufacturing of power SiC semiconductor devices.

   SiC Power Semiconductor Devices for New Applications in Power Electronics
By Dominique Planson, Dominique Tournier, Pascal Bevilacqua, Nicolas Dheilly,
Herve Morel, Christophe Raynaud, Mihai Lazar, Dominique Bergogne,
Bruno Al [View]
[Download]

Abstract: This paper addresses the benefits of SiC semiconductor, owning excellent physical properties able to fulfill new scope of applications in terms of high temperature, high voltage and for more specific applications. Devices and applications developed at Ampere laboratory are detailed.

   Silicon Carbide Schottky Diodes and MOSFETs: Solutions to Performance Problems
By Owen J. Guy [View]
[Download]

Abstract: Silicon carbide has long been hailed as the successor to silicon in many power electronics applications. Its superior electrical and thermal properties have delivered devices that operate at higher voltages, higher temperatures and with lower on-resistances than silicon devices. However, SiC Schottky diodes are still the only devices commercially available today. Though SiC Schottkys are now being used with silicon IGBTs in `hybrid' inverter modules, the real advantages will be seen when silicon switching devices can be replaced by SiC. This paper describes the current state of SiC diode and MOSFET technology, discussing possible solutions to making these devices commercially viable.

EPE-PEMC 2008 - Topic: Present State and Future of Silicon Carbide Power Semiconductor Devices
You are here: EPE Documents > 04 - EPE-PEMC Conference Proceedings > EPE-PEMC 2008 - Conference > EPE-PEMC 2008 - Topic: Present State and Future of Silicon Carbide Power Semiconductor Devices
	[return to parent folder]

	Characterization of the Static and Dynamic Behavior of a SiC BJT By M. M. R. Ahmed	[View] [Download]
Abstract: Silicon carbide (SiC) bipolar junction transistors (BJTs) are interesting candidates for high temperature and for high power applications primarily due to their low conduction losses and fast switching capability. The aim of this paper is to test and evaluate both the static and dynamic characteristics of SiC bipolar junction transistor (developed by TranSiC) rated at 600 V and 6 A at different temperatures. The high power curve tracer 371B has been used to test the DC output characteristics of the device in a temperature range of - 40 °C to 175 °C. A single pulse switching inductive load circuit has been used to test the dynamic characteristics of the SiC BJT. The experimental results with a normal gate drive circuit, show that the device has a turn on time of less than 0.5 μs and turn off time of less than 0.35 μs under test condition of 300 V, 10 A in an ambient temperature of range - 40 °C to 125 °C. In addition, the experimental data were analyzed to obtain the device performance parameters like the turn on, off time, transistor gain and switching losses.

	Power Devices in Polish National Silicon Carbide Program By Mariusz Sochacki	[View] [Download]
Abstract: Polish Government Program "New technologies based on silicon carbide and their applications in high frequency, high power and high temperature electronics" covers an project package that consists of three general tasks. The contribution presents the overview of projects in the field dealing with the design and manufacturing of power SiC semiconductor devices.

	SiC Power Semiconductor Devices for New Applications in Power Electronics By Dominique Planson, Dominique Tournier, Pascal Bevilacqua, Nicolas Dheilly, Herve Morel, Christophe Raynaud, Mihai Lazar, Dominique Bergogne, Bruno Al	[View] [Download]
Abstract: This paper addresses the benefits of SiC semiconductor, owning excellent physical properties able to fulfill new scope of applications in terms of high temperature, high voltage and for more specific applications. Devices and applications developed at Ampere laboratory are detailed.

	Silicon Carbide Schottky Diodes and MOSFETs: Solutions to Performance Problems By Owen J. Guy	[View] [Download]
Abstract: Silicon carbide has long been hailed as the successor to silicon in many power electronics applications. Its superior electrical and thermal properties have delivered devices that operate at higher voltages, higher temperatures and with lower on-resistances than silicon devices. However, SiC Schottky diodes are still the only devices commercially available today. Though SiC Schottkys are now being used with silicon IGBTs in `hybrid' inverter modules, the real advantages will be seen when silicon switching devices can be replaced by SiC. This paper describes the current state of SiC diode and MOSFET technology, discussing possible solutions to making these devices commercially viable.