Herve Morel, Christophe Raynaud, Mihai Lazar, Dominique Bergogne,
Bruno Al
| Filename: | 687.pdf |
| Filesize: | 935.7 KB |
| SiC Power Semiconductor Devices for New Applications in Power Electronics | ||||||
| Author(s) | Dominique Planson, Dominique Tournier, Pascal Bevilacqua, Nicolas Dheilly, Herve Morel, Christophe Raynaud, Mihai Lazar, Dominique Bergogne, Bruno Al |
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| Abstract | This paper addresses the benefits of SiC semiconductor, owning excellent physical properties able to fulfill new scope of applications in terms of high temperature, high voltage and for more specific applications. Devices and applications developed at Ampere laboratory are detailed. | |||||
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| Type | Members Only | |||||
| Date | Last modified 2008-12-07 by System | |||||
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