EPE Association: EPE 2007 - Subtopic 01-3 - LS: Power MOSFET and IGBT

EPE 2007 - Subtopic 01-3 - LS: Power MOSFET and IGBT
You are here: EPE Documents > 01 - EPE & EPE ECCE Conference Proceedings > EPE 2007 - Conference > EPE 2007 - Topic 01: 'Active devices' > EPE 2007 - Subtopic 01-3 - LS: Power MOSFET and IGBT

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   Design of Avalanche Capability of Power MOSFET by Device Simulation
By PUGATSCHOW Anton; PAWEL Ilja; GEISSLER Christian; SIEMIENIEC Ralf; BALK Ludwig-Josef; ROESCH Maximilian; HIRLER Franz [View]
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Abstract: The avalanche behavior of new 150 V Trench Power MOSFETs was designed with the help of two-dimensional device simulation techniques. The devices employ the compensation principle for low on-state losses. A new edge-termination structure ensures that avalanche breakdown always occurs in the cell region of the device. For the transistor cells, two different destruction regimes were identified: energy-related destruction and current-related destruction. Possible simulation approaches to account for the different effects were proposed. The found dependence on design parameters based on device simulation was qualitatively confirmed by experimental results. Furthermore, strong dependence between on-resistance and avalanche current was shown.

   ESBT Power Switch in High-Power High-Voltage converters
By ENEA Vincenzo; BUONOMO Simone; RONSISVALLE Cesare; RACITI Angelo; NANIA Massimo; SCOLLO Rosario; CRISAFULLI Vittorio [View]
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Abstract: Recently available on the market the emitter switched bipolar transistor (ESBT) having high voltage breakdown, low voltage drop, and low switching losses as well, represents an interesting alternative to other power transistors thus giving a new chance to further improve the system efficiency. This paper deals with a new silicon technology used to produce a high voltage monolithic cascode and gives a way to drive the new device in low range power Applications (>1kW). Special focus has been dedicated to inverters and a perspective on the device use in DC/DC converters is given. The loss cutting allows either a strong equipment size reduction or a higher power while maintaining the size.

   Ruggedness of High Voltage Diodes under very hard Commutation Conditons
By SCHULZE Hans-Joachim; HEINZE Birk; LUTZ Josef; FELSL Hans Peter [View]
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Abstract: The possibility for reducing losses in high-voltage IGBT applications is determined by the ruggedness of the associated Freewheeling Diode (FWD). In this paper the influence of buffer structures and edge termination on the ruggedness of fast recovery diodes in a voltage range of 3.3kV are analyzed using isothermal and electro-thermal device simulations.

EPE 2007 - Subtopic 01-3 - LS: Power MOSFET and IGBT
You are here: EPE Documents > 01 - EPE & EPE ECCE Conference Proceedings > EPE 2007 - Conference > EPE 2007 - Topic 01: 'Active devices' > EPE 2007 - Subtopic 01-3 - LS: Power MOSFET and IGBT
	[return to parent folder]

	Design of Avalanche Capability of Power MOSFET by Device Simulation By PUGATSCHOW Anton; PAWEL Ilja; GEISSLER Christian; SIEMIENIEC Ralf; BALK Ludwig-Josef; ROESCH Maximilian; HIRLER Franz	[View] [Download]
Abstract: The avalanche behavior of new 150 V Trench Power MOSFETs was designed with the help of two-dimensional device simulation techniques. The devices employ the compensation principle for low on-state losses. A new edge-termination structure ensures that avalanche breakdown always occurs in the cell region of the device. For the transistor cells, two different destruction regimes were identified: energy-related destruction and current-related destruction. Possible simulation approaches to account for the different effects were proposed. The found dependence on design parameters based on device simulation was qualitatively confirmed by experimental results. Furthermore, strong dependence between on-resistance and avalanche current was shown.

	ESBT Power Switch in High-Power High-Voltage converters By ENEA Vincenzo; BUONOMO Simone; RONSISVALLE Cesare; RACITI Angelo; NANIA Massimo; SCOLLO Rosario; CRISAFULLI Vittorio	[View] [Download]
Abstract: Recently available on the market the emitter switched bipolar transistor (ESBT) having high voltage breakdown, low voltage drop, and low switching losses as well, represents an interesting alternative to other power transistors thus giving a new chance to further improve the system efficiency. This paper deals with a new silicon technology used to produce a high voltage monolithic cascode and gives a way to drive the new device in low range power Applications (>1kW). Special focus has been dedicated to inverters and a perspective on the device use in DC/DC converters is given. The loss cutting allows either a strong equipment size reduction or a higher power while maintaining the size.

	Ruggedness of High Voltage Diodes under very hard Commutation Conditons By SCHULZE Hans-Joachim; HEINZE Birk; LUTZ Josef; FELSL Hans Peter	[View] [Download]
Abstract: The possibility for reducing losses in high-voltage IGBT applications is determined by the ruggedness of the associated Freewheeling Diode (FWD). In this paper the influence of buffer structures and edge termination on the ruggedness of fast recovery diodes in a voltage range of 3.3kV are analyzed using isothermal and electro-thermal device simulations.