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Ruggedness of High Voltage Diodes under very hard Commutation Conditons
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| Author(s) |
SCHULZE Hans-Joachim; HEINZE Birk; LUTZ Josef; FELSL Hans Peter |
| Abstract |
The possibility for reducing losses in high-voltage IGBT applications is determined by the ruggedness of the associated Freewheeling Diode (FWD). In this paper the influence of buffer structures and edge termination on the ruggedness of fast recovery diodes in a voltage range of 3.3kV are analyzed using isothermal and electro-thermal device simulations. |
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| Filename: | 0945-epe2007-full-14172881.pdf |
| Filesize: | 1.401 MB |
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| Type |
Members Only |
| Date |
Last modified 2008-01-11 by System |
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