EPE Association: EPE 2005 - Topic 01-3 - LS: Trends in power devices

EPE 2005 - Topic 01-3 - LS: Trends in power devices
You are here: EPE Documents > 01 - EPE & EPE ECCE Conference Proceedings > EPE 2005 - Conference > EPE 2005 - Topic 01: ACTIVE DEVICES > EPE 2005 - Topic 01-3 - LS: Trends in power devices

   [return to parent folder]

   Advances in Power Switch Technology for 40V - 300V Applications
By KINZER Dan [View]
[Download]

Abstract: Power switch technology has been advancing dramatically in recent years. Breakthroughs occur regularly in current density, switching performance, thermal design, ruggedness, and cost. All of these factors contribute to improvements in efficiency, power density, and system cost of today's power electronic systems. This paper will discuss some of these developments in the 40V-300V class, especially as they could apply to selected applications such as isolated DC/DC converters, switching audio amplifiers, automotive motion control, and plasma displays. Careful design and characterization techniques are essential to assure avalanche current capability and forward bias safe operating area, and various technologies are compared. Trench and planar design and performance differences are highlighted. Packaging improvements such as the DirectFET are essential for improving thermal design and reducing package electrical parasitics.

   An assessment of modern IGBT and anti-parallel diode behaviour in hardswitching applications
By KOPTA Arnost; RAHIMO Munaf; LINDER Stefan; SCHLAPBACH Ulrich [View]
[Download]

Abstract: In this paper we present a detailed assessment of modern IGBT and diode behaviour when operating in a hard-switched mode. The paper will cover current and future application trends and the associated performance requirements from the latest IGBT and diode designs in terms of device and circuit interaction under different operating conditions. We will cover the challenges met by both device and systems designers to provide the optimum performance, efficiency and reliability in hard-switching applications.

   Integration of power devices - next tasks
By ARAKI Toru [View]
[Download]

Abstract: This paper presents new power chip concepts such as Reverse Conducting IGBT (RC-IGBT), which are integrated IGBT with Diode and Reverse Blocking IGBT (RB-IGBT). The RC-IGBT will have a big impact for conventional Power Modules. Because, by using RC-IGBT, we can save resources such as Silicon Chip (including material itself and production energy) and also save Packaging Materials. By using RB-IGBT, we will able to make new Power Control Systems such as AC Matrix Converter and thus eliminate the large DC link Capacitor. High Voltage IC (HVIC) is used already as simple gate drive circuit in low power area. By using HVIC, a single gate power supply is enough for driving all 6 inverter switches. This paper presents newest HVIC concept and structure. We are developing new module packaging concepts having a new thermal dissipation structure and using transfer-molded package. This allows us to reduce package size and weight. Consequently our newest package will save resources of packaging and logistics and energy of transport.The newest Power Module, whose key concept is called “Environmental Compatibility”, will be a combination of RC-IGBT (or RB-IGBT), HVIC and new packaging technologies in order to save resources. The Key Word ”Environmental Compatibility” is indicating our new Power Device’s Direction.

   Silicon Carbide Power Devices Current Developments and Potential Applications
By RUPP Roland; FRIEDRICHS P. [View]
[Download]

Abstract: Silicon carbide power devices are believed to revolutionize key sectors of the power semiconductor business in the next decade. At the moment, their cost positions have to be improved in order to enlarge their market potential. A first step in this direction is the availability of a high quality 3“ base material as well as the outlook for having 4” wafers available by 2006. Looking into the near future, the next logical step in the device chain should be a SiC switching device. The potential ranges from high voltage applications in energy systems down to the huge market for low voltage power switches, where even in the blocking voltage range below 100V SiC is believed to be one potential candidate for fulfilling the increasing demands on power density /1/. One important field of applications of SiC power switches can be the hybrid electric vehicle with its demands on high power density electronics as well as the harsh environmental conditions. It will be shown how the right combination of SiC diodes and silicon IGBT’s can offer enormous improvements in the performance of systems intended to be used in new generation cars using hybrid or even full electric drives. The paper will give an overview about the developments of SiC power switches and diodes at SiCED and Infineon. In addition, some potential applications serving as drivers for the SiC power switch development will be sketched. Finally, an outlook to near and long term perspectives for SiC power devices is given.

EPE 2005 - Topic 01-3 - LS: Trends in power devices
You are here: EPE Documents > 01 - EPE & EPE ECCE Conference Proceedings > EPE 2005 - Conference > EPE 2005 - Topic 01: ACTIVE DEVICES > EPE 2005 - Topic 01-3 - LS: Trends in power devices
	[return to parent folder]

	Advances in Power Switch Technology for 40V - 300V Applications By KINZER Dan	[View] [Download]
Abstract: Power switch technology has been advancing dramatically in recent years. Breakthroughs occur regularly in current density, switching performance, thermal design, ruggedness, and cost. All of these factors contribute to improvements in efficiency, power density, and system cost of today's power electronic systems. This paper will discuss some of these developments in the 40V-300V class, especially as they could apply to selected applications such as isolated DC/DC converters, switching audio amplifiers, automotive motion control, and plasma displays. Careful design and characterization techniques are essential to assure avalanche current capability and forward bias safe operating area, and various technologies are compared. Trench and planar design and performance differences are highlighted. Packaging improvements such as the DirectFET are essential for improving thermal design and reducing package electrical parasitics.

	An assessment of modern IGBT and anti-parallel diode behaviour in hardswitching applications By KOPTA Arnost; RAHIMO Munaf; LINDER Stefan; SCHLAPBACH Ulrich	[View] [Download]
Abstract: In this paper we present a detailed assessment of modern IGBT and diode behaviour when operating in a hard-switched mode. The paper will cover current and future application trends and the associated performance requirements from the latest IGBT and diode designs in terms of device and circuit interaction under different operating conditions. We will cover the challenges met by both device and systems designers to provide the optimum performance, efficiency and reliability in hard-switching applications.

	Integration of power devices - next tasks By ARAKI Toru	[View] [Download]
Abstract: This paper presents new power chip concepts such as Reverse Conducting IGBT (RC-IGBT), which are integrated IGBT with Diode and Reverse Blocking IGBT (RB-IGBT). The RC-IGBT will have a big impact for conventional Power Modules. Because, by using RC-IGBT, we can save resources such as Silicon Chip (including material itself and production energy) and also save Packaging Materials. By using RB-IGBT, we will able to make new Power Control Systems such as AC Matrix Converter and thus eliminate the large DC link Capacitor. High Voltage IC (HVIC) is used already as simple gate drive circuit in low power area. By using HVIC, a single gate power supply is enough for driving all 6 inverter switches. This paper presents newest HVIC concept and structure. We are developing new module packaging concepts having a new thermal dissipation structure and using transfer-molded package. This allows us to reduce package size and weight. Consequently our newest package will save resources of packaging and logistics and energy of transport.The newest Power Module, whose key concept is called “Environmental Compatibility”, will be a combination of RC-IGBT (or RB-IGBT), HVIC and new packaging technologies in order to save resources. The Key Word ”Environmental Compatibility” is indicating our new Power Device’s Direction.

	Silicon Carbide Power Devices Current Developments and Potential Applications By RUPP Roland; FRIEDRICHS P.	[View] [Download]
Abstract: Silicon carbide power devices are believed to revolutionize key sectors of the power semiconductor business in the next decade. At the moment, their cost positions have to be improved in order to enlarge their market potential. A first step in this direction is the availability of a high quality 3“ base material as well as the outlook for having 4” wafers available by 2006. Looking into the near future, the next logical step in the device chain should be a SiC switching device. The potential ranges from high voltage applications in energy systems down to the huge market for low voltage power switches, where even in the blocking voltage range below 100V SiC is believed to be one potential candidate for fulfilling the increasing demands on power density /1/. One important field of applications of SiC power switches can be the hybrid electric vehicle with its demands on high power density electronics as well as the harsh environmental conditions. It will be shown how the right combination of SiC diodes and silicon IGBT’s can offer enormous improvements in the performance of systems intended to be used in new generation cars using hybrid or even full electric drives. The paper will give an overview about the developments of SiC power switches and diodes at SiCED and Infineon. In addition, some potential applications serving as drivers for the SiC power switch development will be sketched. Finally, an outlook to near and long term perspectives for SiC power devices is given.