Reviewers

EPE Journal Reviewers

  • ALABBASI Rabee, University of Basrah - College of Engineering, Iraq
  • ALBACH Manfred, University Erlangen, Germany
  • ALOISI Pierre, Retired, France
  • ALONSO Jose Marcos, University of Oveido, Spain
  • ANDERSEN Michael A. E., Technical University of Denmark, Denmark
  • ARAUJO Armando, Faculty of Engineering of Porto, Portugal
  • ARCEGA Francisco, University of Zaragoza, Spain
  • AROS Nelson, Universidad de la Frontera, Chile
  • ASHER G M, University of Nottingham, United Kingdom
  • AYANA Elias, Cummins Power Generation
  • AZCONDO Francisco, University of Cantabria, Spain
  • AZZOPARDI Stéphane, Université de Bordeaux, France
  • BABURSKE Roman, Chemnitz University of Technology, Germany
  • BAK-JENSEN Birgitte, Aalborg University, Denmark
  • BALCELLS Josep, UPC, Spain
  • BARNES Mike, University of Manchester, United Kingdom
  • BASSETT Roger, Efergy Technologies Limited, United Kingdom
  • BASSI Ezio, Università Di Pavia, Italy
  • BEHERA Ranjan, Indian Institute of Technology, India
  • BELTRAME Rafael Concatto, Federal University of Santa Maria - UFSM, Brazil
  • BENBOUZID Mohamed, University of Brest, France
  • BERTHON Alain, Université de Franche-Comte, France
  • BIANCI Nicola, University of Padova, Italy
  • BIMAL Bose, University of Tennessee, USA
  • BING Zhonghui, Lear Corporation, USA
  • BLAABJBERG Frede, Aalborg University, Denmark
  • BLANUSA Branko, University of Banja Luka, Bosnia-Herzegovina
  • BOEKE Ulrich, Philips Research Laboratories Eindhoven, the Netherlands
  • BOLDEA Ion, University Politechnica Timisoa, Romania
  • BOLOGNANI Silverio, Université de Padova, Italy
  • BONDARENKO Iuliia, Donbas State Technical University, Ukraine
  • BOULGHASOUL Zakaria, Université Cadi Ayyad Marrakech, Morocco
  • BOUSCAYROL Alain, University of Lille, France
  • BRAUN Michael, Université Karlsruher, Germany
  • BROCK Stefan, Poznan University of Technology, Poland
  • BROCKMEYER Ansgar, Siemens AG, Germany
  • BUENO Emilio, University of Alcalà, Spain
  • BUJA Giuseppe , University of Padova, Italy
  • BURDIO José M., Université de Zaragoza, Spain
  • CAPPELLE Jan, Kaho Sint-Lieven University, Belgium
  • CARDENAS Roberto, University of Magallanes, Chile
  • CARMELI Maria Stefania, Politecnico Di Milano, Italy
  • CEROVSKY Zdenek, Technical University of Prague, Czech Republic
  • CHARPENTIER Jean-Frédéric, French Naval Academy, France
  • CHEN Yu, Huazhong University of science & technology, China
  • CHENG Shuo, University of Florida, USA
  • CHOMAT Miroslav, Academy of Sciences of the Czech Republic
  • CHRISTENSEN Søren Kjærulff , Bang & Olufsen
  • CHUNG Henry, City University of Hong-Kong, China
  • CLARE Jon, University of Nottingham, United Kingdom
  • COBOS José A., Universidad Politecnica de Madrid, Spain
  • COLOMBI Silvio , GE-IMV, Switzerland
  • CRISAFULLI Vittorio, SemiSouth Laboratories Inc, USA
  • CROFUT Fredrick, Lockheed Martin Corporation - Space Systems Company, USA
  • CRUZ Sérgio, University of Coimbra, Italy
  • DAKYO B., University of Le Havre, France
  • DALLA COSTA Marco, Universidade de Caxias Do Sul, Brazil
  • DANG Huy, University of Nottingham, United Kingdom
  • DE ALMEIDA Martins Carlos, CERN, Switzerland
  • DE BELIE, Frederik, Universiteit van Gent, Belgium
  • DE HAAN Sjoerd, Delft University of Technology, the Netherlands
  • DE ROOIJ Michael, GE Global Research, USA
  • DEBLECKER Olivier, Faculté Polytechnique de Mons, Belgium
  • DEDE Enrique J., GH Electrotermia SA, Spain
  • DENDOUGA Abdelhakim, University of Mohamed Khider, Algery
  • DESMET Jan, Hogeschool West-Vlaanderen, Belgium
  • DESSOUKY Yasser, Arab Academy for Science & Technology, Egypt
  • DI NAPOLI Augusto , University Roma TRE, Italy
  • DIAZ Juan, University of Oveido, Spain
  • DOBRUCKY Branislav , University of Žilina, Slovakia
  • DRABEK Pavel, West Bohemia University, Czech Republic
  • DRURY David, University of Bristol, United Kingdom
  • DUJIC Drazen, ABB Corporate Research, Switzerland
  • DUNLOP Andrew, DYN, USA
  • DZIENIAKOWSKI Maciej A., Institute of Control & Industrial Electronics
  • EBRAHIM Mohammed, Ingersoll Rand
  • ECHEVERRIA Jose Martin, Centro de estudios e investigaciones técnicas de Gipuzkoa, Spain
  • EICHERBERG Bernd, Graz University of Technology, Austria
  • EL BARBARI Said, General Electric Global Research, Germany
  • ELIZONDO CARRALES Jose Luis, Tecnologico de Monterrey, Mexico
  • FEKI Moez , ENIS, Sfax, Tunisia
  • FENG Xianyong, Texas A&M University, USA
  • FERNANDEZ Manés Cabanas, University of Oviedo, Spain
  • FERREIRA J.A., Delft University of Technology, the Netherlands
  • FERRIEUX Jean-Paul, Laboratoire de Génie Electrique de Grenoble, France
  • FILCHEV Todor, Converteam Naval Systems Inc
  • FLORES David, Institut de Microelectrònica de Barcelona, Spain
  • FLORES Efren, Winderemere Real Estate
  • FOREST François, Université de Montpellier 2, France
  • FOSTER Martin, University of Sheffield, United Kingdom
  • FRAGAPANE Leonardo, STM, Italy
  • FRANCOIS Bruno, Ecole Centrale de Lille - L2EP, France
  • FRATTA Antonino, Politecnico di Torino, Italy
  • FRIEDRICH Guy, Université de technologie de Compiègne (UTC), France
  • FUCHS Andreas , Elektrizitaetswerke des Kanton Zuerich, Switzerland
  • FUJII Kansuke, Fuji Electric Co., ltd.
  • FUKUDA Shoji, Retired, Japan
  • GAICEANU Marian, Dunarea de Jos University of Galati, Romania
  • GAO Qiang, University of Nottingham, United Kingdom
  • GARCIA-GONZALES Pablo, Universidad. Pontificia Comillas, Spain
  • GARCIA-CERRADA Aurelio, Universidad Pontificia Comillas, Spain
  • GATEAU Guillaume, LEEI-ENSEEIHT, Laplace Université de Toulouse, France
  • GLINKA Martin, Siemens AG-Rail Systems Division
  • GONCALVES Henrique, University of Minho, Portugal
  • GOPAKUMAR K, Indian Institute of Science, India
  • GOULD Chris, Staffordshire University, United Kingdom
  • GRASS Norbert, OHM University, Germany
  • GRIVA Giovanni, Politecnico di Torino, Italy
  • GURGUIATU Gelu, Dunarea de Jos University of Galati, Romania
  • GYSELINCK Johan, Université Libre de Bruxelles, Belgium
  • HAHN Ingo, Uni Erlangen, Germany
  • HAN Chong, Grid Systems, ABB Inc
  • HANIGOVSKY, Danfoss Drives, Denmark
  • HARNEFORS Lennart, ABB Power Technologies, Sweden
  • HASSAN Fainan, Alstom Grid
  • HENDRIX Marcel, Technische Universiteit Eindhoven, the Netherlands
  • HERNANDEZ Leobardo, CENIDET, Mexico
  • HERNANDO ALVAREZ Marta, University of Oviedo, Spain
  • HILAIRET Mickaël, Laboratoire de Génie électrique, France
  • HOANG Khoa, The University of Sheffield, United Kingdom
  • HOFFMANN Nils, University of Kiel, Germany
  • HOFMANN Wilfried, TU Dresden, Germany
  • HRABOVCOVA Valeria, University of Žilina, Slovakia
  • HYDE Andrew , Alstom Grid, United Kingdom
  • IOINOVICI Adrian, Holon Institute of Technology, Israël
  • JæGER Ulrik, Danfoss Drives, Denmark
  • JANG Jihoon, General Motors
  • JARDAN Rafael, Budapest University of Technology & Economics, Hungary
  • JELONKIEWICZ Jerzy, Czestochowa University of Technology, Poland
  • JENKINS Nicholas, Cardiff University, United Kingdom
  • JENSEN Mari Haugen, Western Geco AS, Norway
  • JEZERNIK Karel, University of Maribor, Slovenia
  • JIA Liang, GBU LED Systems
  • JORDA Xavier, Centro Nacional de Microelectronica, Spain
  • KALASCHNIKOW Sergej, Danfoss GmbH, Austria
  • KAMINSKI Nando, University Bremen, Germany
  • KAMP Peter, Siemens AG
  • KANAAN Hadi, Saint-Joseph University, Lebanon
  • KANCHAN Rahul, ABB Corporate Research
  • KANETKAR Vilas, Autometers Alliance LTD
  • KARGAR Abbas, Shahrekord University, Iran
  • KARLSSON Per, Lund University, Sweden
  • KÁRPÁTI Attila, BME
  • KATIC Vladimir, University of Novi Sad, Serbia
  • KAZMIERKOWSKI Marian Piotr, Warsaw University of Technology, Poland
  • KENNEL Ralph, Technische Universitaet Muenchen, Germany
  • KESHRI Ritesh, Birla Institute of Technology, Mesra, India
  • KHANDUJA Gagandip Singh, Laljibhai Chaturbhai Institute of Technology, India
  • KHATOUNIAN Flavia, Saint-Joseph University, Lebanon
  • KHAYYER Pardis, Ohio State Institute for energy and the environment, USA
  • KJæR Philip C. , Vestas Wind Systems A/S, Denmark
  • KOK Dirk , University of Sunderland, Morocco
  • KOK Eric, Infineon Technologies Asia Pacific
  • KOLLI Ramesh Reddy, G. Narayanamma Institute Technology & Science, India
  • KONDRATIEV Igor, University of South Carolina, USA
  • KRIM Fateh, University of Setif, Algeria
  • KUBOTA Sachio, Toba National College of Maritime Technology, Japan
  • LADOUX Philippe, Laboratoire Plasma et Conversion d'Energie, France
  • LAGERWEIJ Arnold, Alstom
  • LAI Ching-Ming, LiteOn Technology Corporation, Taiwan
  • LAMAR Diego G., University of Oveido, Spain
  • LASCU Dan, Politehnica University of Timisoara, Romania
  • LAVIEVILLE Jean-Paul, Schneider, France
  • LAWRENCE Roger, RGI Solutions Inc, Canada
  • LE MOIGNE Philippe, L2EP - EC Lille, France
  • LEE Byounghee, Korean Advanced Institute of Science & Technology, Korea
  • LENTIJO Kathleen, Converteam Naval Systems, Inc
  • LEON Jose I. , Galva, University of Sevilla, Spain
  • LEU Ching-Shan, Nat'l Taiwan University of Science, Taiwan
  • LEVI Emil , Liverpool John Moores University, United Kingdom
  • LI Wali, Arens Controls Company L.L.C., USA
  • LINDEMANN Andreas, Otto-von-Guericke University Magdeburg, Germany
  • LING Steve, National University of Singapore
  • LODDICK Sean, Converteam
  • LORENZ Leo, Systems Engineering Manager at Cisco, Germany
  • LU Xi, Michigan State University, USA
  • LUCIA Oscar, University of Zaragoza, Spain
  • LUTZ Josef, TU Chemnitz, Germany
  • MAESTRI Sebastian, Universidad Nacional de Mar del Plata, Argentina
  • MARGUERON Xavier, Ecole Centrale de Lille - L2EP
  • MARQUES CARDOSO Antonio J., University of Coimbra, Portugal
  • MARQUES Gil, TU Lisbon, Portugal
  • MARTIN Jose, University of the Basque Country, Spain
  • MARTINEZ Abelardo , University of Zaragoza, Spain
  • MARTINS Antonio, FEUP-DEEC-ISR, Portugal
  • MARTINS Denizar, Universidade Federal de Santa Catarina, Brazil
  • MARTIS Claudia, Technical University of Cluj-Napoca, Romania
  • MASSONER Johann , Infineon Technologies, Austria
  • MATSUDA Hideo, Hasetec Corporation, Japan
  • MATTAVELLI Paolo, Virginia Tech university, USA
  • MAUSSION Pascal , Laplace University of Toulouse, France
  • MEERSMAN Bart, Ghent University, Belgium
  • MELKEBEEK Jan, Ghent University, Belgium
  • MINAS Graca, University of Minho, Portugal
  • MIRCEVSKI Slobodan, Faculty for Electrical Engineering and Information Technologies, Macedonia
  • MITRONIKAS Epaminondas, University of Patras, Greece
  • MOGHE Rohit, Georgia Institute of Technology, USA
  • MOHAMMADPOUR Ali, Rensselaer Polytechnic Institute, USA
  • MOLINAS Marta, Norwegian University of Sciences, Norway
  • MONMASSON Eric, Université de Cergy-Pontoise, France
  • MONTESINOS-MIRACLE Daniel, CITCEA-UPC, Spain
  • MORANCHO Frédéric, LAAS & CNRS, France
  • MORENO-GOYTIA Edgar, Instituto Tecnologico De Morelia, Mexico
  • MOSCHOPOULOS Gerry, University of Western Ontario, Canada
  • MOUBAYED Nazih, Lebanese University, Lebanon
  • MUETZE Annette, Graz University of Technology, Germany
  • MULTON Bernard, ENS de Cachan Antenne de Bretagne, France
  • MURUGAN Arulmozhiyal, Sona College of Technology, India
  • NESTLI Tom F., Unitech Power Systems AS, Norway
  • NIEZNANSKI Janusz, Gdansk University of Technology, Poland
  • NIIRANEN Jouko, ABB Oy, Finland
  • NIKOLIC Aleksandar, Electrical Engineering Institute, Serbia
  • NOEL Y. Shammas, Staffordshire University, United Kingdom
  • OATES Colin , Alstom Grid, United Kingdom
  • OHSHIMA Massaki, Origin Electric Co Ltd., Japan
  • OLIVER Jesus, Universidad Politecnica de Madrid, Spain
  • ORLOWSKA-KOWALSKA Teresa, Wroclaw University of Technology, Poland
  • ÖSTLUND Stefan, Royal Institute of Technology, Sweden
  • OZDEMIR Engin, Kocaeli University, Turkey
  • PACAS Mario, University of Siegen, Germany
  • PARVULESCU Lucian, University Politehnica of Bucharest, Romania
  • PAVELKA Jiri, Czech Technical University Prague, Czech Republic
  • PAVLOU Konstantinos, National Technical University of Athens, Greece
  • PAVLOVSKY Martin, Royal University of Bhutan
  • PERACAULA J., Universidad Politecnica de Cataluna, Spain
  • PERFETTO Aldo, University of Naples, Italy
  • PERPINYA Xavier, IMB-CNM (CSIC), Spain
  • PERRIARD Yves, École polytechnique fédérale de Lausanne, Switzerland
  • PETKOVSKA Lidija, University Sts. Cyril & Methodius, Macedonia
  • PETREUS Dorin, Technical University of Cluj-Napoca, Romania
  • PIEPENBREIER Bernhard, University of Erlangen-Nuremberg, Germany
  • POULLAIN Serge, Areva T&D, France
  • QUANG Nguyen Phung, Hanoi University of Science and Technology, Vietnam
  • RADAN Ahmad, K.N.Toosi University of Technology, Iran
  • RADIC Aleksandar, Université de Toronto, Canada
  • RAFAJDUS Pavol, University of Žilina, Slovakia
  • RAMOS Gustavo, Facultad de Ingeniería Universidad de Los Andes, Colombia
  • RANSTAD Per, Alstom Power
  • RASOLONJANAHARY Jean-Louis, Alstom Grid, United Kingdom
  • RAZIK Hubert, Laboratoire GREEN-Groupe de Recherche en Électrotechnique et Électronique de Nancy, France
  • REBOLLO Jose, Centro Nacional de Microelectronica - CSIC, Spain
  • RECH Cassiano, Universidade Federal de Santa Maria, Brazil
  • REVOL Bertrand, Laboratoire SATIE, France
  • RIBICKIS Leonids, Riga Technical University, Latvia
  • RICHARDEAU Frédéric, Laplace University of Toulouse, France
  • RIVERA Marco, Federico Santa María Technical University, Chile
  • ROBERT Frédéric, Université Libre de Bruxelles, Belgium
  • ROBET Pierre-Philippe, University of Nantes, France
  • ROBYNS Benoit, Ecole des Hautes Etudes d'Ingénieur, France
  • ROCHA Gerardo, University of Minho, Portugal
  • RODIC Miran, University of Maribor, Slovenia
  • RODRIGUEZ-AYERBE Pedro Jesus, Supelec, France
  • RONKOWSKI Mieczyslaw, Technical University of Gdansk, Poland
  • ROSAS-CARO Julio, Instituto Tecnologico de Ciudad Madero, Mexico
  • ROUND Simon , University of Canterbury, New Zealand
  • RUAN Xinbo, Huazhong University of Science and Technology, China
  • RUDERMAN Alex, Elmo Motion Control, Israël
  • RUDOLPH Christian, Still GMBH, Germany
  • RUFER Alfred, EPFL-STI-LEI, Switzerland
  • SAADATE Shahrokh, Laboratoire GREEN-Groupe de Recherche en Électrotechnique et Électronique de Nancy, France
  • SAFAEE Alireza, Queen's University, Ireland
  • SAMOTYJ M., Electric Power Research Institute, USA
  • SANDOVAL John, Universidad del Valle, Colombia
  • SCARCELLA Giuseppe, University of Catania, Italy
  • SCHAEFERr Uwe, University of Technology Berlin, Germany
  • SCHANEN Jean-Luc, G2ELAB, France
  • SCHEUERMANN Uwe, Semikron Elektronic GMBH & CO, Germany
  • SCHIERLING Hubert, Siemens AG, Germany
  • SCHITTLER Andressa, Federal University of Santa Maria, Brazil
  • SCHLENK Manfred, NMB-Minebea, Germany
  • SCHROEDER Gunter, University of Siegen, Germany
  • SCHROEDL Manfred, Technische Universität Wien, Austria
  • SCHULLERUS Gernot, Reutlingen University, Germany
  • SCHUMACHER Walter, Braunschweig University of Technology, Germany
  • SEDDIK Bacha, G2ELAB, France
  • SEMAIL Betty, L2EP & USTL, France
  • SEMAIL Eric, Arts et Métiers Paristech, France
  • SEMAN Slavomir, ABB Oy Drives, Finland
  • SEPULVEDA Joao, University of Minho, Portugal
  • SERBAN Ioan, Robert Bosch GMBH
  • SHAPOVAL Ivan, National Academy of Sciences of Ukraine
  • SHAHIRINIA Amirhossein , University of Wisconsin-Milwaukee, USA
  • SIEMENEC Ralf, University of Ilmenau, Germany
  • SILVA Fernando A, Instituto Superior Técnico, Portugal
  • SIRISUKPRASERT Siriroj, Kasetsart University, Thailand
  • SLAMA- BELKHODJA Ilhem, Ecole Nationale d'Ingénieurs de Tunis, Tunisia
  • SOARES Vascos Emanuel Anjos , Instituto Superior de Engenharia de Lisboa, Portugal
  • SOOKSATRA Somboon, Rangsit University, Thailand
  • STEIMER Peter, ABB, Switzerland
  • STEPHAN Richard, Universidade Federal do Rio de Janeiro, Brazil
  • STICH Fred, FASTechnology Group, USA
  • STONE Dave, University of Sheffield, United Kingdom
  • STRICKLAND Dani, Aston University, United Kingdom
  • STRÖM Juha-Pekka, Lappeenranta University of Technology, Finland
  • SUMMER M. , University of Nottingham, United Kingdom
  • SUNTER Sedat, Firat University, Turkey
  • SUNTIO Teuvo, Tampere University of Technology, Finland
  • SZABO Lorand, Tehnical University of Cluj Napoca, Romania
  • TAN Kia Hock, Universiti Tunku Abdul Rahman, Malaysia
  • TANG Yifan, Tesla Motors INC
  • TAPIA Alejandro, Instituto Politecnico Nacional - unidad Culhuacan, Mexico
  • TENCONI Alberto, Politecnico di Torino, Italy
  • TENNAKOON Sarath, Staffordshire University, United Kingdom
  • TENTI Paolo, University of Padova, Italy
  • TEODORECUu Remus, Aalborg University, Denmark
  • THOMAS Jean-Luc, Cnam / Supelec, France
  • THOMPSON David, University of Dundee, United Kingdom
  • TNANI Slim, Université de Poitiers, France
  • TOMASINI Matteo, University of Nottingham, United Kingdom
  • TOURNIER Dominique, INSA Lyon, France
  • TRINTIS Ionut, Aalborg University, Denmark
  • VAN DEN BOSSCHE Peter, Erasmushogeschool Brussel, Belgium
  • VAN DER MERWE Wim, Université de Stellenbosch, South Africa
  • VAN MIERLO Joeri, Vrije Universiteit Brussel, Belgium
  • VAN OVERBEEKE Frank, EMforce, the Netherlands
  • VEERANA Subbiah, Sri Krishna College of Engineering, India
  • VELLVEHI Miquel, Centro Nacional de Microelectronica, Spain
  • VERMA Arun, Indian Institute of Technology Delhi, India
  • VERVEKKEN Jan, ESAT - KU Leuven, Belgium
  • VESZPREMI Karoly, Budapest University of Technology.& Economics, Hungary
  • VEZZINI Andréa, Berne University of Applied Sciences, Switzerland
  • VIDO Lionel, SATIE-IUP GEII, FRANCE
  • VIEIRA José Luiz F., University of Espirito Santo, Brazil
  • VILLEGAS Pedro J., University of Oveido, Spain
  • VISINTINI Roberto, Sincrotrone Trieste, Italy
  • VITTEK Jan, University of Žilina, Slovakia
  • VUKSIC Marko, University of Split, Croatia
  • WAFFENSCHMIDT Eberhard , Fachhochschule Köln, Germany
  • WANG Fei, Eindhoven University of Technology, the Netherlands
  • WANG Xiaoxiao, Freescale Semiconductor Inc., USA
  • WATSON Alan, University of Nottingham, United Kingdom
  • WHEELER Pat , University of Nottingham, United Kingdom
  • WICHAKOOL Warit, Massachusetts Institute of Technology, USA
  • WOLBANK Thomas M., Vienna University of Technology, Austria
  • XIAOQIANG Guo, Yanshan University, China
  • XU Jianping, Southwest Jiaotong University, China
  • YAMADA Eiji, Nagasaki University, Japan
  • YANG Xiaofeng, Beijing Jiaotong University, China
  • YANO Masao, Tokyo University, Japan
  • YEH Chia-Chou, General Motors Corporation
  • YONGCHANG Zhang, North China University of Technology, China
  • YONGHUA Cheng , VITO-Flemish Institute for Technological Research, Belgium
  • YOSHINO Teruo, Toshiba Mitsubishi-Electric
  • YOUSFI Driss, National School of Applied Sciences, Morocco
  • YU Xiaoxiao, ASTAR, Singapore
  • ZAMBRA Diorge, Universidade de Caxias do Sul, Brazil
  • ZANCHETA Pericle , University of Nottingham, United Kingdom
  • ZARRI Luca, University of Bologna, Italy
  • ZELAYA DE LA PARRA Hector, ABB Corporate Research, Sweden
  • ZHANG Julia, The Ford Motor Company
  • ZHANG Shao, Nanyang Technological University, Singapore
  • ZHANG Zhe, Technical University of Denmark
  • ZISSIS Georges, Université de Toulouse 3, France
  • ZOBAA Ahmed F., Brunel University, United Kingdom