By V. I. Galanov, M. K. Gurevich, Y. A. Shershnev
| EPE-PEMC 2004 - Topic 01-1: Power semiconductor devices | ||
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| | High Voltage Turn-Off Valves Design Principles
By V. I. Galanov, M. K. Gurevich, Y. A. Shershnev | |
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Abstract: To-day the significant part of equipment for FACTS
and power motor drives are based on series connected turn-off
power semiconductor devices (IGCT or IGBT). The similar and
the difference between high voltage turn-off valve (HVTV)
based on IGCTs or IGBTs are considered, such as air or liquid
cooling option, snubber configuration, acceptable length of
semiconductor stack and specific features of drivers for HVTV.
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