EPE Association: EPE 2023 - LS4c: Wide-Band Gap Power Electronics

EPE 2023 - LS4c: Wide-Band Gap Power Electronics
You are here: EPE Documents > 01 - EPE & EPE ECCE Conference Proceedings > EPE 2023 ECCE Europe - Conference > EPE 2023 - Topic 02: Power Converter Topologies and Design > EPE 2023 - LS4c: Wide-Band Gap Power Electronics

   [return to parent folder]

   48 V Current Source Inverter with Bidirectional GaN eHEMT Switches for Low Inductance Machine Drives
By Benjamin ZACHER, Andreas BAUER, Kai FRANCK, Christian SCHUMANN [View]
[Download]

Abstract: Because of the specific features of wide-bandgap switches like GaN and SiC, the current source inverter is increasingly becoming a competitor to the voltage source topology. Although some research still rate the VSI superior to the CSI, the results are highly dependent on the target application. In this paper the CSI is discussed for low inductance machines such as PCB winding motors. Further, the performed experiments consider relevant parasitic effects in the converter layout process. The experiments show good results of a total harmonic distortion below 3\% for the output current wave form with a load inductance of 22 µH and 100 kHz switching frequency.

   An Active Snubber based Soft-Switching Totem-Pole Boost PFC
By Douglas PAPPIS, Sven WESSEL, Kai-Manuel KRACHT, Denis WICHMANN, Norbert HEES [View]
[Download]

Abstract: An active snubber for soft-switching is proposed. A half-bridge and a small inductor are added to a single-phase 3.6 kW totem-pole boost PFC converter, implemented with GaN E-HEMTs. It enables CCM operation with efficiencies above 98\% at 250 kHz, therefore high power density. Operation, simulations, and experimental results are presented.

   Dead Time Constraints in Gallium Nitride Devices for Inverter Applications
By Vincenzo BARBA, Salvatore MUSUMECI, Fausto STELLA, Marco PALMA [View]
[Download]

Abstract: The paper deals with investigating the dead time constraints for Gallium Nitride (GaN) devices ininverter switching leg applications. The power devices considered are the low-voltage enhancement GaN FETs. The variable current (typical of inverter applications) influencing the dead time impact is analysed through several simulation results and experimental tests. Furthermore, device temperature measurements support the dead time effect. The proposed survey allows for obtaining a procedure for correctly selecting the length of the dead time to avoid cross-conduction and lower the device losses.

EPE 2023 - LS4c: Wide-Band Gap Power Electronics
You are here: EPE Documents > 01 - EPE & EPE ECCE Conference Proceedings > EPE 2023 ECCE Europe - Conference > EPE 2023 - Topic 02: Power Converter Topologies and Design > EPE 2023 - LS4c: Wide-Band Gap Power Electronics
	[return to parent folder]

	48 V Current Source Inverter with Bidirectional GaN eHEMT Switches for Low Inductance Machine Drives By Benjamin ZACHER, Andreas BAUER, Kai FRANCK, Christian SCHUMANN	[View] [Download]
Abstract: Because of the specific features of wide-bandgap switches like GaN and SiC, the current source inverter is increasingly becoming a competitor to the voltage source topology. Although some research still rate the VSI superior to the CSI, the results are highly dependent on the target application. In this paper the CSI is discussed for low inductance machines such as PCB winding motors. Further, the performed experiments consider relevant parasitic effects in the converter layout process. The experiments show good results of a total harmonic distortion below 3\% for the output current wave form with a load inductance of 22 µH and 100 kHz switching frequency.

	An Active Snubber based Soft-Switching Totem-Pole Boost PFC By Douglas PAPPIS, Sven WESSEL, Kai-Manuel KRACHT, Denis WICHMANN, Norbert HEES	[View] [Download]
Abstract: An active snubber for soft-switching is proposed. A half-bridge and a small inductor are added to a single-phase 3.6 kW totem-pole boost PFC converter, implemented with GaN E-HEMTs. It enables CCM operation with efficiencies above 98\% at 250 kHz, therefore high power density. Operation, simulations, and experimental results are presented.

	Dead Time Constraints in Gallium Nitride Devices for Inverter Applications By Vincenzo BARBA, Salvatore MUSUMECI, Fausto STELLA, Marco PALMA	[View] [Download]
Abstract: The paper deals with investigating the dead time constraints for Gallium Nitride (GaN) devices ininverter switching leg applications. The power devices considered are the low-voltage enhancement GaN FETs. The variable current (typical of inverter applications) influencing the dead time impact is analysed through several simulation results and experimental tests. Furthermore, device temperature measurements support the dead time effect. The proposed survey allows for obtaining a procedure for correctly selecting the length of the dead time to avoid cross-conduction and lower the device losses.